Q 13003 Search Results

HF 13003

Abstract: 13003 electronic ballast 13003 13002 sw 13003 LB 13002 BR 13003 13003 circuit HF 13002 H 13003
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • a ^ Q O 't e DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique

Contextual Info: QSFCT273T, 2273T Q High Speed CMOS 8-Bit Register with Asynchronous Reset qs5474fct273t QS54/74FCT2273T FEATURES/BENEFITS • Pin and function compatible to the 74F273 74FCT273 and 74ABT273 • CMOS power levels: <7.5 mW static • Available in DIP, SOIC, QSOP, ZIP, HQSOP

Contextual Info: ÖUALITY SEMICONDUC TOR INC bSE J> QSFCT280T, B 74fc,bfl03 ÜGD1EG3 417 1280T High Speed CMOS 9-Bit Parity Generator/Checker q s 54/74 f c t 2 sot qs54/74fcti28ot FEATURES/BENEFITS • • • • • QSFCT280BT faster than FAST 6.3 ns delay, I x to Xe for QSFCT280BT

tea 9502

Abstract: Electronic Arrays Inc T3FL 9502c inverter /Invertron Vti
Contextual Info: V L S I TECHNOLOGY I NC 72 dË| T3flfl3M7 D D D 0 4 2 D 5 | p ^~~T-42-ll-09 % VGC SERIES ADVANCED 2-MICRON CMOS GATE ARRAY FAMILY Q FEATURES • 500,900,1200,1900,2400,3200, 4000,6000 and 8000 gates. • True 2-micion silicon gate CMOS technology • High performance—

vt20c98

Contextual Info: V L S I TECHNOLOGY INC IflE D • =1300347 Q G 0 3 1 Ô 3 7 ■ V L S I Technology in c . P R E L IM IN A R Y VT20C98 • VT20C99 8 ,1 9 2 x 8 SRA M FEATURES DESCRIPTION • High speed a c c e ss and cycle times: 25, 30 and 35 ns T he V T 2 0 C 9 8 and V T 2 0 C 9 9 are

palce22v10 programming guide

Contextual Info: COM’L MIL PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 Advanced Micro Devices 24-pln TTL/CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz fMAX ■ Low-power EE CMOS versions ■ 10 m acroceils program m able as registered or

palce22v10 programming guide

Abstract: PAL22V10-12/BKA
Contextual Info: ADV MICRO P L A / PLE/ ARRAYS EßE PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 0E575Eb OQETSSS 3 IAMDE ~\ T-46-I9-07 T—46—19—13 Advanced Micro Devices 24-pln TT L/CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz

RAL22V10

Abstract: PALCE22V100-25 pal22v10
Contextual Info: COM’L MIL Cl PAL22V10-10/15 AmPAL22Vl 0/A PALCE22V10H-15/25/Q-25 Advanced Micro Devices 24-pln TTUCMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz fM AX ■ Low-power EE CMOS versions ■ 10 m acrocells program m able as registered o r

pal 007a

Abstract: dr 13003 si 13003 PAL22V10 13003 111 x 13003 circuit al 13003 PAL 002a pal 010a PC 13003
Contextual Info: ADV MICRO P L A / PLE/ ARRAYS EßE 0E575Eb OQETSSS 3 ~\ T -46-I9-07 PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 IAMDE Advanced Micro Devices T—46—19—13 24-pln TT L/CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

SD 1083

Contextual Info: S D 1 87 l5 Q - * » 0 0 DWG-N0" .0 4 7 - .0 6 3 FILE CAD SB7 I3Q.DGN D IS C RE TE WIRE FLAT -L -L INCH 87 130-0200 2.50 .098 7.50 .295 87 130-0300 5.00 .197 10.00 .394 87 130-0400 7.50 .295 12.50 .492 87 130-0500 10.00 .394 15.00 .591 87 130-0600 12.50 .492

aramid

Contextual Info: *J RADIALI! T itle F 715 151 000 TECHNICAL DATA SHEET Fibre Optic Components STANDARD MULTIMODE PLUG fo r a coated f ib e r DIA 900 |^ni alone or with a t i g t h cable Dimensions : mm S e r ie s EC 6.4b MAXI X & -< firm fl Ü C\J ~o £ CONTENTS 12345- Plug housing+optical ferrule DIA 146 |um q M"1-EEimj

Contextual Info: V L S I T E C H N O L O G Y INC 47E D T3flfl347 Q D a ñ ? 7 T T V L S I Tech no lo gy , in c . VTI T -V 2 -* // VSRAM 100 HIGH SPEED STATIC RAM LIBRARY FEATURES DESCRIPTION • RAM configuration up to 4K bits — word width 4 or 8 bits — word depth 128, 256 or

s4si

Contextual Info: 0,6 Section A - B 5:1 2X ^ 2,8min. 0.1 0,3 a 2,5 |—EE°Z E a 0,35 1 I m m 1r 11 j| ji §! Si m S! m 4SI S Si g ai S Si H ai |= | 0.2 |C I-0.1 FIRST ftNGLE PROJECTION Q @ REVISE ONLY ON CAD SYSTEM DRWG BY Ca 96 pos. Male co n n ecto r acc. DIN A 1612 Style R

13003 TRANSISTOR equivalent

Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
Contextual Info: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS

VT20C

Contextual Info: V L S I TECHNOLOGY INC 1ÖE D =130034? DD03Q42 □ • T - M - 8 3 -6 8 VLSI T ech n o lo g y , in c . VT20C71 • VT20C72 4,096 x 4 SEPARATE I/O SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 25, 35 ns The VT20C71 and VT20C72 are high-speed static RAMs organized

Contextual Info: TECHNOLOGY INC Tfi *1300347 0 0 0 1 7 3 ^ 7 ^ VLSI T e c h n o l o g y , in c . PRELIMINARY rT : V6:35 VT2KF9 2,064X9 FIFO MEMORY FE A T U R E S DESCRIPTION • FlraMn, flret-out dual-port memory The VT2KF9 Is a flrst-ln, flrst-out FIFO memory that uses a h igh *

E 13003 TRANSISTOR

Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique

SD13003

Contextual Info: EN G IN EER IN G NO. 130039 "sj 00 9 10 M A T E R IA L NO. D ESC RIPTIO N 1300390385 DND150 F E M A L E S T A N D A R D T E R M IN A T O R WITH R E S IS T O R 1 300390386 DND151 F E M A L E T E R M IN A T O R WITH JU M PE RS NO TES: 1. M A T E R IA L : S E E T A B L E

transistor 13003d

Abstract: 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a
Contextual Info: ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES Tj=25℃ Unless OtherWise Stated Parameter Symbol Value

me 13003

Abstract: ar 13003 HN62412P TU F 13003
Contextual Info: H I T A C H I / L O G I C / A R R A Y S / M E M DM DËJ 0013003 0 04E 13003 4496203 HITACHI/ L OG IC / A R R A Y S/ M E M HN62412P- -P V Ó -/ J -/ 3 " 131072-word x 16-bit/262144-word x 8-bit CM O S Mask Programmable Read Only Memory The HN62412P is a 2-Mbit CMOS mask-programmable ROM

PT6045

Abstract: VSC370 PT6005
Contextual Info: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology

Contextual Info: F NÜM^ÊîR D IM E N SIO N S I fi M l YY\ N O TES /f\ -D o n OT S G A L E P R IN T £ ï<=3nn<3Jja. C 130030-34’ <£ c te d i/ >' H \J0IR i . </ iS rZ - 1^] I J I J R EV J ERDO -0065-04 09/04 GR U & 2,3 o^ê 2>9o4J 4384 00 61 -£-L — CQJ •:;' -.W. :/

VT20C68-20

Abstract: VT20C68-35 VT20C68 J 6920 A VT20C
Contextual Info: V L S I 1ÔE 1> TECHNO LOG Y INC V L S I Te c h n o l o g y • =1300347 □DG3D37 7 ■ T-Hb-Z3 - / 2. in c . VT20C68 • VT20C69 4,096 x 4 SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 2 0 ,2 5 , and 35 ns The VT20C68 and VT20C69 are high-speed static RAMs SRAMs