PYA28C64X Search Results

PYA28C64

Abstract: eeprom
Contextual Info: PYA28C64 X 8K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time CMOS & TTL Compatible Inputs and Outputs

Contextual Info: PYA28C64 X 8K X 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns CMOS & TTL Compatible Inputs and Outputs Single 5V±10% Power Supply Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) Fast Byte Write (200µs or 1 ms) Low Power CMOS:

Contextual Info: PYA28C64 X 8K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte Write Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time CMOS & TTL Compatible Inputs and Outputs Endurance:

5962-8751404XA

Abstract: 5962-8751415XA 5962-8751403XA 5962-8751410XA 5962-87514 5962-8751401xa 5962-8751412XA 5962-8751425XA PYA28C64B-30CWMB 5962-8751417XA
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add case outline letter U. Add vendor CAGE number 60395 to drawing. Editorial changes throughout. 89-08-07 M. A. Frye B Add device type 28 to drawing. Editorial changes throughout. 93-01-05 M. A. Frye C

PYA28C64

Contextual Info: PYA28C64 X 8K x 8 EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte Write Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time CMOS & TTL Compatible Inputs and Outputs Endurance:

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A