PXPR Search Results

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FH46 The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FM46L The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89CM42 The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FH42L The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FM42L 2009 TOSHIBA CORPORATION All Rights Reserved Revision History Date Revision 2008/2/14 1 First Release 2008/9/3 2 Contents Revised 2009/7/21 3 Contents Revised Table of Contents TMP89FM42L 1.1 1.2 1.3 1.4

w1p84

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FM82 2009 TOSHIBA CORPORATION All Rights Reserved TMP89FM82 Considerations for using Motor Control Circuit PMD:Programmable Motor Driver Following considerations are necessary for writing data to electrical lead angle timer (ELDEG) and reading 2 bytes

Contextual Info: MN101CA5 Series MN101CA5F MN101CFA5G Mask ROM FLASH ROM byte 96K 128K RAM (byte) 4K 10K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time LQFP112-P-2020 (ES (Engineering Sample) available) 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.24 µs (at 2.7 V to 5.5 V, 8.4 MHz)

Contextual Info: MN101C457 Type MN101C457 ROM x× 8-bit 16 K RAM (×× 8-bit) 0.5 K Package QFP044-P-1010E *Pb free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* * The lower limit for operation guarantee for EPROM built-in type is 2.7 V.

Contextual Info: MN101C73 Series Type Internal ROM type MN101C73A MN101CF73A Mask ROM FLASH 32K ROM byte 1.5K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time 2K LQFP064-P-1414, TQFP064-P-1010C 0.1 µs (at 3.0 V to 3.6 V, 10 MHz) 0.235 µs (at 1.8 V to 3.6 V, 4.25 MHz)*

Contextual Info: MN101C38A , MN101C38C Type MN101C38A MN101C38C 32 K 48 K 1.5 K 2K ROM x× 8-bit External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free, LQFP100-P-1414 *Lead-free Minimum Instruction Execution Time

Contextual Info: MN101C539 Type MN101C539 ROM x× 8-bit 24 K (External memory can not be expanded) RAM (×× 8-bit) 0.5 K (External memory can not be expanded) Package TQFP048-P-0707B *Lead-free Minimum Instruction Execution Time High speed mode: 0.10 µs (at 4.5 V to 5.5 V, 20 MHz)

23/PX-ICE101E

Contextual Info: MN101E34 Series MN101EF34D Type Internal ROM type FLASH ROM byte 64K+4K RAM (byte) 4K Package (Lead-free) Minimum Instruction Execution Time TQFP048-P-0707B 0.042 µs (at 2.2 V to 5.5 V, 24 MHz) 62.5 µs (at 2.2 V to 5.5 V, 32 kHz) • Interrupts RESET. Watchdog. External 0 to 4. External 5 (key interrupt dedicated). External 6. Timer 0 to 4. Timer 6. Timer 7 (2 systems). Timer 8 (2

Contextual Info: MN101C485 , MN101C487 Type MN101C485 MN101C487 8K 16 K 0.5 K 0.5 K ROM x× 8-bit External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package LQFP064-P-1414 *Lead-free, TQFP064-P-1010B *Lead-free Minimum Instruction Execution Time

Contextual Info: MN101C273 Type MN101C273 ROM x× 8-bit 4K RAM (×× 8-bit) 0.5 K Package (Conventional Package) SDIP028-P-0400D *Lead-free (SDIP028-P-0400) Minimum Instruction Execution Time 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 1.00 µs (at 2.0 V to 5.5 V, 2 MHz)* * The lower limit for operation guarantee for EPROM built-in type is 2.7 V.

Contextual Info: MN101C273 Type MN101C273 ROM x× 8-bit 4K RAM (×× 8-bit) 0.5 K Package (Conventional Package) SDIP028-P-0400D *Lead-free (SDIP028-P-0400) Minimum Instruction Execution Time 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 1.00 µs (at 2.0 V to 5.5 V, 2 MHz)* * The lower limit for operation guarantee for EPROM built-in type is 2.7 V.

Contextual Info: MN101E35 Series MN101E35A Type MN101E35D 32K ROM byte MN101EF35A Mask ROM Internal ROM type MN101EF35D FLASH 68K 32K 64K+4K 4K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time TQFP048-P-0707B 0.042 µs (at 2.2 V to 3.6 V, 24 MHz, When USB unused)

Contextual Info: MN101C39 Series Type Internal ROM type MN101C39C MN101CP39C Mask ROM EPROM ROM byte 48K RAM (byte) 2K TQFP080-P-1212D 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 125 µs (at 2.0 V to 5.5 V, 32 kHz)* *: The lower limit for operation guarantee for EPROM built-in type is 2.3 V.

Contextual Info: MN101C94 Series MN101C94A MN101CF94D Mask ROM FLASH ROM byte 32K 64K RAM (byte) 1K 2K Type Internal ROM type QFP044-P-1010F 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* *: The lower limit for operation guarantee for flash memory built-in type is 2.5 V.

Contextual Info: MN101C35D Type MN101C35D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package QFP100-P-1818B *Lead-free Minimum Instruction Execution Time 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 125 µs (at 2.2 V to 5.5 V, 32 kHz)* * The lower limit for operation guarantee for EPROM built-in type is 2.7 V.

Contextual Info: MN101C58 Series MN101C589 Type MN101C58A Mask ROM Internal ROM type 24K ROM byte 32K 1.5K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101CF58D MN101CP58A FLASH EPROM 64K 32K 2K 1.5K LQFP064-P-1414 0.1 µs (at 4.5 V to 5.5 V, 20 MHz)

Contextual Info: MN101C48 Series MN101C485 Type MN101C487 MN101CP487 Mask ROM Internal ROM type EPROM 8K ROM byte 16K 0.5K RAM (byte) LQFP064-P-1414, TQFP064-P-1010B 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 125 µs (at 2.0 V to 5.5 V, 32 kHz)*

Contextual Info: MN101C457 Type MN101C457 ROM x× 8-bit 16 K RAM (×× 8-bit) 0.5 K Package QFP044-P-1010F *Lead-free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)*

kaseikyo

Contextual Info: MN101C57 Series MN101C57C Type MN101C57D FLASH 48K ROM byte MN101CF57D Mask ROM Internal ROM type 64K 2K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP100-P-1818B 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)

MN1874876

Abstract: CRTC MN18P76476 QFH064-P-1414B n9 357
Contextual Info: □ MN1874876 1 M N 1874876 Type • ROM x8-bit 48K 1 RAM (x8-bit) 928 I Minimum Instruction Execution Time ■ Interrupts 2/3 dividing 0.5[is (at 4 .5 to 5 .5 V , 12M H z) •R E S E T • l2C 1 T im er Counter « E x té rn a lo «S erial ♦ External 1