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MG240V1US41 Abstract: DIODE i2t Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG240V1US41 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: tf = 1.5µs Max. (IC = 240A) trr = 0.6µs (Max.) (IF = 240A)	Original	MG240V1US41 -40hts PW04540796 MG240V1US41 DIODE i2t	PDF

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MG240V1US41

Abstract: DIODE i2t
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG240V1US41 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: tf = 1.5µs Max. (IC = 240A) trr = 0.6µs (Max.) (IF = 240A)

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MG240V1US41 -40hts PW04540796 MG240V1US41 DIODE i2t

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