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Catalog Datasheet	Type	Document Tags	PDF
MG8J6ES1 Abstract: ge 152g K 2056 transistor Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG8J6ES1 Unit in mm High Power Switching Applications Motor Control Applications • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage : v C E s a t = 4.0V (Max.)	OCR Scan	2-64a2a tdt725d 21flcj3 pw03260796 +4tjs125 mg8j6es1 ge 152g k 2056 transistor	PDF
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG8J6ES1 High Power Switching Applications Motor Control Applications • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage : VCE sat = 4.0V (Max.)	OCR Scan	pw03260796	PDF

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MG8J6ES1

Abstract: ge 152g K 2056 transistor
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG8J6ES1 Unit in mm High Power Switching Applications Motor Control Applications • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage : v C E s a t = 4.0V (Max.)

OCR Scan

2-64a2a tdt725d 21flcj3 pw03260796 +4

PDF

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG8J6ES1 High Power Switching Applications Motor Control Applications • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage : VCE sat = 4.0V (Max.)

OCR Scan

pw03260796

PDF