PULSE TRANSFORMER 949 Search Results

T-821

Abstract: 822 smd N 821 Diode PULSE TRANSFORMER 949 smd PULSE TRANSFORMER 5.1 circuit diagram schematics SMD transformer smd voltage transformer t822 T-822
Contextual Info: Pulse Transformer Turns Ratio + 5% 1.0 : 1.0 Parameter Min. Max. Units Open Circuit Inductance Oscillation Voltage = 1V Oscillation Frequency = 100 KHz 701 949 µH *Interwinding Capacitance (CW/W) Oscillation Frequency = 100 KHz 20 pF Primary & Secondary DC Resistance

computer smps circuit

Abstract: APTD-16000 APT-16002
Contextual Info: PULSE TRANSFORMER APTD-16000 SERIES FEATURES: COMMON APPLICATIONS: • • • • • • Lan, WDN • Computers • SMPS Control Circuit Low Profile 16 Pin DIP Package Low Leakage Inductance Low Interwinding Capacitance High Isolation Voltage Meets MIL-STD 21038

APT-6000

Abstract: APT-6005 APT-6004 computer smps circuit iso 6001 smps Hi-Pot APT-6002 APT-6006 APT 6000 APT-6012
Contextual Info: PULSE TRANSFORMER APT-6000 SERIES FEATURES: COMMON APPLICATIONS: • • • • • • Lan, WDN • Computers • SMPS Control Circuit Low Profile 6 Pin DIP Package Low Leakage Inductance Low Interwinding Capacitance High Isolation Voltage Meets MIL-STD 21038

PULSE TRANSFORMER 949

Abstract: APT-6012 computer smps circuit smps Hi-Pot
Contextual Info: PULSE TRANSFORMER APT-6000 SERIES FEATURES: COMMON APPLICATIONS: • • • • • • Lan, WDN • Computers • SMPS Control Circuit Low Profile 6 Pin DIP Package Low Leakage Inductance Low Interwinding Capacitance High Isolation Voltage Meets MIL-STD 21038

12v transformer

Abstract: hi-pot transformer
Contextual Info: High Frequency Wire Wound Transformers EP13 Platforms - SMT Power Range: up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Toplogy: Forward and Flyback Electrical Specifications @ 25°C - Operating Temperature -40°C to +130°C 126.7µH ±10% Lk. Inductance

INT-936

Abstract: INTDT93-4 AN949 AN-949
Contextual Info: VISHAY SILICONIX Power MOSFETs Application Note AN-949 Current Rating of Power Semiconductors TABLE OF CONTENTS Page What Is Current Rating?. 2

center tap pulse transformer

Abstract: C1500 50480R Schott Magnetics T2032S 46Z232 9836 DS21E55 PE-64953 DS21352
Contextual Info: Application Note 351 Transformer Selection Guide www.dalsemi.com The following is a list of transformer part numbers from a variety of vendors for use with the DS215x, DS21x5y, DS21Qx5y, DS21E35y, DS2155, DS21Q55, DS21E55, DS2148 and the DS21Q48. The specifications for selecting an appropriate transformer are given in the data sheets for each device and are

FERRITE TOROIDAL CORE DATA

Abstract: variable inductor smps transformer smps transformer design smps inductor ferrite SMPS 1812 smps transformers balun transformer block transformers CERAMIC Inductor
Contextual Info: Ta b l e o f C o n t e n t s Part Series Description Page Number Surface Mounted Ferrite Chip Beads for EMI/RFI Attenuation: ACML-0402-0603 .SMD Multilayer Chip Beads .6

HR604064

Abstract: TG05-1505NV6 PM8403 UT23755 Hanrun AN377 UT23022 PMT119 J1 cable 40 pinouts AN-377
Contextual Info: Transformer Selection Guide for IDT T1/E1/J1 LIU and Transceiver Application Note AN-377 TABLE OF CONTENTS INTRODUCTION . 2

PA2369NL

Abstract: PA2466 PA2369 PA2437 hi-pot transformer PA2431NL 480UH
Contextual Info: High Frequency Wire Wound Transformers EP13 Platforms - SMT Power Range: Up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 3-4 (3-4) with (10,9,8,7) shorted

Flashlamp schematic

Abstract: kijima musen LTC3485 LDT565630T IGBT DRIVER SCHEMATIC LDT565630T-002 capacitor charging flyback LT3485EDD-3 600V igbt dc to dc boost converter igbt dc to dc converter capacitor charging
Contextual Info: LT3485-0/LT3485-1/ LT3485-2/LT3485-3 Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive U DESCRIPTIO FEATURES The LT 3485 family of photoflash chargers are highly integrated ICs containing complete charger and IGBT drive functions. The patented control technique of the LT3485-x

Flashlamp schematic

Abstract: LDT565630T-001 kijima musen LT3485-0 LT3485-1 LT3485-2 LT3485-3 igbt dc to dc converter capacitor charging flyback transformer 4kV LDT565630T-041
Contextual Info: LT3485-0/LT3485-1/ LT3485-2/LT3485-3 Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive U DESCRIPTIO FEATURES The LT 3485 family of photoflash chargers are highly integrated ICs containing complete charger and IGBT drive functions. The patented control technique of the LT3485-x

Contextual Info: PD - 94991A IRFZ48NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description

Contextual Info: PD - 94991B IRFZ48NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description

Contextual Info: PD - 94965B IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description

IRF1010

Contextual Info: PD - 94952A IRFZ46NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 16.5mΩ G ID = 53A‡ S Description

IRF3710PBF

Abstract: IRF1010
Contextual Info: PD - 94954D IRF3710PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description

f1010

Abstract: IRF3415PBF
Contextual Info: PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

IRF3710PBF

Contextual Info: PD - 94954C IRF3710PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description

IRF3710PBF

Contextual Info: PD - 94954A IRF3710PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description

480UH

Abstract: 9V-50V PA136
Contextual Info: High Frequency Wire Wound Transformers EP13 Platforms - SMT Power Range: Up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 3-4 (3-4) with (10,9,8,7) shorted

IRF1010

Abstract: IRF1010NPBF
Contextual Info: PD - 94966A IRF1010NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 11mΩ G ID = 85A‡ S Description

Pulse Transformer - PPT

Abstract: wave shaping circuit ppt E1 HDB3 CN8380 CN8380EPF CN8398EVM D660 RJ48C e1120
Contextual Info: Advance Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. CN8380 Quad T1/E1 Line Interface The CN8380 is a fully integrated quad line interface unit for both 1.544 Mbps T1 and

Contextual Info: PD - 94947B IRLML6302PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free HEXFET Power MOSFET *  VDSS = -20V  ' 6  RDS(on) = 0.60Ω