PUB41 Search Results

Contextual Info: Power Transistor Arrays PUB4220 PU4220 , PUB4520 (PU4520) Silicon PNP epitaxial planar type darlington For power amplification Complementary to PUB4120 (PU4120), PUB4420 (PU4420) Unit: mm • Features 1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5 9.5±0.2 • High forward current transfer ratio hFE

Contextual Info: Power Transistor Arrays PUB4117 PU4117 , PUB4417 (PU4417) Silicon NPN triple diffusion planar type For power amplification and switching Unit: mm • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: Power Transistor Arrays PUB4122 PU4122 , PUB4422 (PU4422) Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features • Built-in zener diode (30 V) between collector and base • Small variation in withstand pressure

Contextual Info: Power Transistor Arrays PUB4213 PU4213 , PUB4513 (PU4513) Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUB4113 (PU4113), PUB4413 (PU4413) Unit: mm • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit

PU4111

Abstract: PU4211 PU4411 PU4511 PUB4111 PUB4211 PUB4411 PUB4511
Contextual Info: Power Transistor Arrays PUB4211 PU4211 , PUB4511 (PU4511) Silicon PNP epitaxial planar type For power amplification Complementary to PUB4111 (PU4111), PUB4411 (PU4411) Unit: mm 25.3±0.2 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE

PU4112

Abstract: PU4212 PUB4112 PUB4212
Contextual Info: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) Unit: mm 25.3±0.2 4.0±0.2 • Absolute Maximum Ratings TC = 25°C 0.5±0.15 1.0±0.25 0.5±0.15 2.54±0.2 9 x 2.54 = 22.86±0.25

PU4424

Abstract: PU4124 PUB4424
Contextual Info: Power Transistor Arrays PUB4124 PU4124 , PUB4424 (PU4424) Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features • Built-in zener diode (60 V) between collector and base • Small variation in withstand pressure

Contextual Info: Power Transistor Arrays PUB4122 PU4122 , PUB4422 (PU4422) Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features • Built-in zener diode (30 V) between collector and base • Small variation in withstand pressure

Contextual Info: Power Transistor Arrays PUB4127 PU4127 Silicon NPN triple diffusion planar type For power amplification/switching Unit: mm • Features 25.3±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 35±5 V Collector-emitter voltage (Base open)

PU4120

Abstract: PU4220 PU4420 PU4520 PUB4120 PUB4220 PUB4420 PUB4520
Contextual Info: Power Transistor Arrays PUB4120 PU4120 , PUB4420 (PU4420) Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUB4220 (PU4220), PUB4520 (PU4520) M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 25.3±0.2 1.65±0.2

PU4120

Abstract: PU4220 PU4420 PU4520 PUB4120 PUB4220 PUB4420 PUB4520
Contextual Info: Power Transistor Arrays PUB4220 PU4220 , PUB4520 (PU4520) Silicon PNP epitaxial planar type darlington For power amplification Complementary to PUB4120 (PU4120), PUB4420 (PU4420) M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 25.3±0.2 ■ Absolute Maximum Ratings TC = 25°C

PU4111

Abstract: PU4211 PU4411 PU4511 PUB4111 PUB4211 PUB4411 PUB4511
Contextual Info: Power Transistor Arrays PUB4111 PU4111 , PUB4411 (PU4411) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4211 (PU4211), PUB4511 (PU4511) Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 25.3±0.2 Collector-base voltage (Emitter open)

PU4114

Abstract: PU4214 PUB4114 PUB4214
Contextual Info: Power Transistor Arrays PUB4114 PU4114 Silicon NPN triple diffusion planar type For power amplification and switching Complementary to PUB4214 (PU4214) Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 25.3±0.2 4.0±0.2 1.65±0.2 Solder Dip 5.3±0.5

PUB4422

Abstract: PU4122 PU4422 PUB4122
Contextual Info: Power Transistor Arrays PUB4122 PU4122 , PUB4422 (PU4422) Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d • Built-in zener diode (30 V) between collector and base • Small variation in withstand pressure

Contextual Info: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) Unit: mm 25.3±0.2 4.0±0.2 1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Power Transistor Arrays PUB4213 PU4213 , PUB4513 (PU4513) Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUB4113 (PU4113), PUB4413 (PU4413) Unit: mm • Features 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Power Transistor Arrays PUB4119 PU4119 , PUB4419 (PU4419) Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUB4219 (PU4219), PUB4519 (PU4519) Unit: mm • Features 25.3±0.2 9.5±0.2 1.65±0.2 Solder Dip

PU4112

Abstract: PU4212 PUB4112 PUB4212
Contextual Info: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) M Di ain sc te on na tin nc ue e/ d Unit: mm 25.3±0.2 4.0±0.2 1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat)

PU4119

Abstract: PU4219 PU4419 PU4519 PUB4119 PUB4219 PUB4419 PUB4519
Contextual Info: Power Transistor Arrays PUB4119 PU4119 , PUB4419 (PU4419) Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUB4219 (PU4219), PUB4519 (PU4519) M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 25.3±0.2

PU4118

Abstract: PUB4118
Contextual Info: Power Transistor Arrays PUB4118 PU4118 Silicon NPN triple diffusion planar type For power amplification and switching M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 25.3±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

PU4121

Abstract: PU4421 PUB4121 PUB4421
Contextual Info: Power Transistor Arrays PUB4121 PU4121 , PUB4421 (PU4421) Silicon NPN triple diffusion planar type darlington For power amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d • Built-in zener diode (30 V) between collector and base • Small variation in withstand pressure

PU4110

Abstract: PU4210 PU4410 PU4510 PUB4110 PUB4210 PUB4410 PUB4510
Contextual Info: Power Transistor Arrays PUB4110 PU4110 , PUB4410 (PU4410) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4210 (PU4210), PUB4510 (PU4510) Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 25.3±0.2 Collector-base voltage (Emitter open)

PU4110

Abstract: PU4210 PU4410 PU4510 PUB4110 PUB4210 PUB4410 PUB4510 tic103
Contextual Info: Power Transistor Arrays PUB4210 PU4210 , PUB4510 (PU4510) Silicon PNP epitaxial planar type For power amplification Complementary to PUB4110 (PU4110), PUB4410 (PU4410) Unit: mm • Feature 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE

PU4110

Abstract: PU4210 PU4410 PU4510 PUB4110 PUB4210 PUB4410 PUB4510
Contextual Info: Power Transistor Arrays PUB4110 PU4110 , PUB4410 (PU4410) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4210 (PU4210), PUB4510 (PU4510) Unit: mm • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open)