PUA3117 Search Results

Contextual Info: Power Transistor Arrays PUA3117 PU3117 Silicon NPN triple diffusion planar type For power amplification and switching Unit: mm 20.2±0.3 4.0±0.2 Solder Dip 5.3±0.5 4.4±0.5 M Di ain sc te on na tin nc ue e/ d 9.5±0.2 1.65±0.2 • High forward current transfer ratio hFE

PU3117

Abstract: PUA3117
Contextual Info: Power Transistor Arrays PUA3117 PU3117 Silicon NPN triple diffusion planar type For power amplification and switching Unit: mm 20.2±0.3 4.0±0.2 9.5±0.2 1.65±0.2 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE

PU3117

Abstract: PUA3117
Contextual Info: Power Transistor Arrays PUA3117 PU3117 Silicon NPN triple diffusion planar type For power amplification and switching Unit: mm M Di ain sc te on na tin nc ue e/ d 20.2±0.3 4.0±0.2 Solder Dip 5.3±0.5 4.4±0.5 ue pl d in an c se ed lud pl vi an m m es si

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and