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D2P03 Abstract: MMDF2P03HD Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview HDTMOSTM E=FETTM High Energy Power FET MMDF2P03HD Wwern *H Oeviss P=Channel EnhancementmModeSilicon Gate v This advanced high-cell density HDTMOS E-FET is designed to withstand high energy in the avalanche and commutation modes.	Original	mmdf2p03hd pu18e d2p03	PDF

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D2P03

Abstract: MMDF2P03HD
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview HDTMOSTM E=FETTM High Energy Power FET MMDF2P03HD Wwern *H Oeviss P=Channel EnhancementmModeSilicon Gate v This advanced high-cell density HDTMOS E-FET is designed to withstand high energy in the avalanche and commutation modes.

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mmdf2p03hd pu18e d2p03

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