PU106 Search Results

703078AY

Abstract: 70F3079AY NEC D76 70307 U14665EJ4V0UD uPD703075AY uPD703076AY uPD703078AY uPD703078Y uPD703079YGC
Contextual Info: User’s Manual V850/SF1 32-Bit Single-Chip Microcontroller Hardware µPD703075AY µPD703075AY A µPD703076AY µPD703076AY(A) µPD703078AY µPD703078AY(A) µPD703078Y µPD703079AY µPD703079AY(A) µPD703079Y Document No. U14665EJ4V0UD00 (4th edition) Date Published September 2003 N CP(K)

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8230TU SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The PC8230TU is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the

617DB-1674

Abstract: UPC3231gv UPC3231GV-E1-A
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3231GV GENERAL PURPOSE 5 V 100 MHz AGC AMPLIFIER DESCRIPTION The µPC3231GV is a silicon monolithic IC designed for use as AGC amplifier for digital CATV, cable modem and digital terrestrial systems. This IC consists of gain control amplifier and video amplifier.

536EP

Abstract: UPD70F3079AYGC-8EU tsc102 703078AY FA100GC-8EU FA-100GC-8EU
Contextual Info: User’s Manual TM V850/SF1 32-Bit Single-Chip Microcontroller Hardware µPD703075AY µPD703076AY µPD703078AY µPD703078Y µPD703079AY µPD703079Y µPD70F3079AY µPD70F3079Y Document No. U14665EJ3V0UD00 3rd edition Date Published January 2003 N CP(K) 2000, 2003

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz

ST3215

Contextual Info: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RO4003

Abstract: HS350 NEC RF Switch CMOS marking BB INA
Contextual Info: DATA SHEET CMOS INTEGRATED CIRCUIT µPD5715GR CMOS MMIC 4 x 2 IF SWITCH MATRIX FEATURES • 4 independent IF channels, integral switching to channel input to either channel output • Integrated 4 bit decoder • Frequency range : f = 250 to 2 150 MHz • High isolation D/U ratio

TI121

Abstract: NEC d464 703088Y alu 9308 d TI120 T3168 PD703088 813 P121 GR GE CR120 BY728
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

marking 6-PIN PLASTIC TSON

Abstract: HS350
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

d5716

Abstract: HS350 RO4003
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NESG3033M14-T3

Abstract: MCR01MZPJ5R1 NESG3033M14 AML1005H5N6STS NESG3032M14 NESG3033M14-A NESG3033M14-T3-A GRM1552C1H GRM155B11H GRM1552C1H270J
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PC3237TK

Abstract: 2T 970
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

NE5814M14

Abstract: MOS4 NE5814 HS350 transistor 20 dB
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

HS350

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

703078AY

Contextual Info: User’s Manual V850/SF1 32-Bit Single-Chip Microcontrollers Hardware µPD703075AY µPD703075AY A µPD703076AY µPD703076AY(A) µPD703078AY µPD703078AY(A) µPD703078Y µPD703079AY µPD703079AY(A) µPD703079Y Document No. U14665EJ5V0UD00 (5th edition) Date Published August 2005 N CP(K)

TRANSFORMER RF 4.5-MHz 1F

Abstract: 617DB-1674 HS350 5332 ssop PC3234GV
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3234GV GENERAL PURPOSE 5 V 100 MHz AGC AMPLIFIER DESCRIPTION The μPC3234GV is a silicon monolithic IC designed for use as AGC amplifier for digital CATV, cable modem and digital terrestrial systems. This IC consists of gain control amplifier and video amplifier.

R5F100LEA

Abstract: R5F100 R5F100AA R5F100LE R5F100ACDSP R5F100AE R01US0015E R20UT0008E R5F101 R5F10
Contextual Info: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

PC8231TK

Abstract: marking 6K
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8231TK SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The PC8231TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. This device exhibits low noise figure and high power gain

HS350

Abstract: PU106 PC8230TU
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT MPC8230TU SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The MPC8230TU is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the

HS350

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8232T5N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The µPC8232T5N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the

70F3017A

Abstract: PU106 V850 U15673E uPD703014B uPD703014BY uPD703015B uPD703015BY WT470 v850 architecture CR10
Contextual Info: User’s Manual TM V850/SA1 32-Bit Single-chip Microcontroller Hardware µPD703014A µPD703014AY µPD703014B µPD703014BY µPD703015A µPD703015AY µPD703015B µPD703015BY µPD703017A µPD703017AY µPD70F3015B µPD70F3015BY µPD70F3017A µPD70F3017AY Document No. U12768EJ4V0UD00 4th edition

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8232T5N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8232T5N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3237TK LOW NOISE WIDE BAND SILICON GERMANIUM MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The μPC3237TK is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for the