Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PTFA210301E Search Results

    PTFA210301E Datasheets (1)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PTFA210301E
    Infineon Technologies 2100 MHz to 2200 MHz; Package: PG:H-30265-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,110.0 - 2,170.0 MHz; P1dB (typ): 30.0 W; Supply Voltage: 28.0 V; Original PDF 191.76KB 9

    PTFA210301E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A2103

    Contextual Info: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA


    Original
    ptfa210301eptfa210301f30-watta2103 PDF

    marking us capacitor pf l1

    Abstract: BCP56 LM7805 PTFA210301E infineon gold
    Contextual Info: PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MHz Description The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is optimized for single- and two-carrier WCDMA operation from 2110


    Original
    ptfa210301e30-wattmarking us capacitor pf l1bcp56+2lm7805infineon gold PDF

    LM7805

    Abstract: PTFA210301E
    Contextual Info: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA


    Original
    ptfa210301eptfa210301f30-wattlm7805 PDF