PTF180701E Search Results

a1807

Abstract: BCP56 LM7805 PTFA180701E PTFA180701F RO4350 PTF180701E
Contextual Info: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description PTFA180701E Package H-30265-2 The PTFA180701E and PTFA180701F are thermally-enhanced, 70-watt, internally-matched GOLDMOS FETs intended for EDGE applications in

a1807

Abstract: PTFA180701E PTF180701E A3563 1800 ldmos BCP56 LM7805 PTFA180701F RO4350 H-36265-2
Contextual Info: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with

Contextual Info: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with

a1807

Abstract: LM7805 PTFA180701E PTFA180701F RO4350 BCP56
Contextual Info: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with