PTF180101M Search Results

PTF180101M Datasheets (3)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTF180101M		Infineon Technologies	1800 MHz to 2000 MHz; Package: PG-RFP-10; Flange Type: Surface Mount; Matching: None; Frequency Band: 1,000.0 - 2,000.0 MHz; P_1dB (typ): 10.0 W; Supply Voltage: 28.0 V	Original	PDF	303.97KB	8
PTF180101MV1		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 10W TSSOP-10	Original	PDF		8
PTF180101M V1		Infineon Technologies	IC FET RF LDMOS 10W TSSOP-10	Original	PDF	377.62KB	3

PTF180101M Price and Stock

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Infineon Technologies AG


Infineon Technologies AG PTF180101M-V1 RF MOSFET LDMOS 28V RFP-10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTF180101M-V1	Tape & Reel			500	1 - 10 - 100 - 1000 $10.65 10000 $10.65	Buy Now
Infineon Technologies AG PTF180101MV1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	PTF180101MV1		8,684			1 - 10 - 100 - 1000 - 10000 -	Get Quote

PTF180101M Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LM7805 smd Abstract: LM7805 smd transistor marking C14 Contextual Info: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency	Original	PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10 LM7805 smd LM7805 smd transistor marking C14	PDF
TSSOP10 Abstract: tSSOP10 Package Contextual Info: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency P–1dB .	Original	PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10 TSSOP10 tSSOP10 Package	PDF
Contextual Info: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description Features The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency P–1dB . Full gold metallization	Original	PTF180101M PTF180101M 10-watt	PDF
Contextual Info: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency P–1dB . Full gold metallization ensures excellent device lifetime	Original	PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10	PDF
LM7805 M SMD Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small	Original	PTF180101M PTF180101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v	PDF
LM7805 smd Abstract: LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small	Original	PTF180101M PTF180101M 10-watt PG-RFP-10 LM7805 smd LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds	PDF
LM7805 M SMD Abstract: LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 PTF180101M TPSE106K050R0400 Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small	Original	PTF180101M PTF180101M 10-watt LM7805 M SMD LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 TPSE106K050R0400	PDF
A211801E Abstract: A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E Contextual Info: Preliminary Product Selection Guide Preliminary Product Selection Guide Pac kag es ffor or LDMO S RF P ower Tran sistor s and IC s ack age LDMOS Po ans ors ICs RF Power Product Selection Guide TEP AC - Therm al ly -Enh anc ed C er amic TEPA Thermal ally ly-Enh	Original	H-30248-2 H-36248-2 H-30260-2 H-36260-2 H-30265-2 H-31248-2 H-37248-2 H-31260-2 H-31260-2 H-31265-2 A211801E A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E	PDF