PTF082002E Search Results

PTF082002E Datasheets (1)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTF082002E		Infineon Technologies	High Power RF LDMOS FET 200 W: 860-900 MHz	Original	PDF	77.66KB	4

PTF082002E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
infineon power fet Abstract: 45ACP PTF082002E Contextual Info: Developmental PTF 082002E High Power RF LDMOS FET 200 W, 860–900 MHz Description Features The PTF 082002E is a 200 W, internally matched GOLDMOS FET intended for CDMA applications in the 860-900 MHz bands. Full gold metallization ensures excellent device lifetime and reliability.	Original	082002e is-95 infineon power fet 45acp +1ptf082002e	PDF

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infineon power fet

Abstract: 45ACP PTF082002E
Contextual Info: Developmental PTF 082002E High Power RF LDMOS FET 200 W, 860–900 MHz Description Features The PTF 082002E is a 200 W, internally matched GOLDMOS FET intended for CDMA applications in the 860-900 MHz bands. Full gold metallization ensures excellent device lifetime and reliability.

Original

082002e is-95 infineon power fet 45acp +1

PDF