PTC10001 Search Results

Contextual Info: PTC10001 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400ö V(BR)CBO (V) I(C) Max. (A)20 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250u¶ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50

TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON

Abstract: 250V 10A TF 106
Contextual Info: ì 6 1 1 5 9 5 0 M I C R O S E M I C O R P / P_ OWER 05 V T M C i TECHNOLOGY J 02E 00454 D T 'IfT '3 3 DElbllSTSD D0004S4 7 T~ PTC 1 0 0 0 0 P — — T— i PTC 10001P Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 20 AMPERES . 400 VOLTS

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MJ10001

Contextual Info: 6115950 MIC ROSEMI 02E C OR P/ POWE R □a J P X C 00512 D E I ^115^50 DD0GS1S CCC10001 3 TECHNOLOGY 20 A, 500 V, NPN Darlington Power Transistor Chip • Epitaxial Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au

SSH6N80

Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
Contextual Info: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0