PTC NI 1000 Search Results

TSB2151

Contextual Info: M ICROSEM I CORP/POülER 27E D h llS 'ìS G QQDGS41 2 • f^"33 ~l3> PTC TSB215100 PTC TECHNOLOGY Power Transistor Chip, NPN 15 A, 1000 V, tf = 50ns ■ Planar Epitaxial ■ Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils

Contextual Info: THERMAL SENSORS / CIRCUIT PROTECTORS TECHNOLOGY OF TOMORROW THERMAL SENSORS LINEAR PTC, THICK FILM LA 73 STRUCTURE 1 2 3 4 5 6 7 8 Ceramic substrate Top termination Bottom termination Thick film resistor element Protective layer End termination Diffusion barrier Ni

LA73

Abstract: K470
Contextual Info: THERMAL SENSORS / CIRCUIT PROTECTORS THERMAL SENSORS LINEAR PTC THICK FILM LA 73 STRUCTURE 1 2 3 4 5 6 7 8 Ceramic substrate Top termination Bottom termination Thick film resistor element Protective layer End termination Diffusion barrier Ni Solder plating

linear ptc thermistors 0805

Abstract: LA73
Contextual Info: THERMAL SENSORS THERMAL SENSORS LINEAR PTC THICK FILM LA 73 STRUCTURE 1 2 3 4 5 6 7 8 Ceramic substrate Top termination Bottom termination Thick film resistor element Protective layer End termination Diffusion barrier Ni Solder plating IDENTIFICATION PRODUCT CODE

Contextual Info: THERMAL SENSORS / CIRCUIT PROTECTORS TECHNOLOGY OF TOMORROW THERMAL SENSORS LINEAR PTC, THICK FILM LA 73 STRUCTURE 1 2 3 4 5 6 7 8 Ceramic substrate Top termination Bottom termination Thick film resistor element Protective layer End termination Diffusion barrier Ni

Contextual Info: THERMAL SENSORS / CIRCUIT PROTECTORS TECHNOLOGY OF TOMORROW THERMAL SENSORS LINEAR PTC, THICK FILM LA 73 STRUCTURE 1 2 3 4 5 6 7 8 Ceramic substrate Top termination Bottom termination Thick film resistor element Protective layer End termination Diffusion barrier Ni

Contextual Info: HICROSEMI CORP/POWER 57E D bllSiSD 0QQGS43 t, • PTC 7733-/3 TSB702100 1 ?T C T TECHNOLOGY Power TVansistor Chip, NPN 2 A, 1000 V, tf = 35ns ■ Planar Epitaxial ■ Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils

Contextual Info: microseui corp/power 27E D • tillSTSQ ÜDDGS31 T ■ PTC T -33-/3, TSA65520 Power Transistor Chip, NPN 55 A, 200 V, tf= 0.1 ps Planar Epitaxial Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils Applications:

Contextual Info: HICRÔSEMI CORP/POülER 57E D • bllSTSD 0G00533 3 ■ PTC T-33-/3 TSA73520 Power IVansistor Chip, NPN 35 A, 200 V, tf= 0.1 jus ■ Planar Epitaxial ■ Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils

5609

Abstract: 5609 transistor TSB15065
Contextual Info: microsemi CORP/PO üIER 27E D • tallSTSG QQ0Q53? G ■ PTC ‘T ' 3 3 TSB15065 TECHNOLOGY Power Transistor Chip, NPN 50 A, 650 V, tf= 50 ns ■ Planar Epitaxial V Contact Metallization; Base and Emitter-Aluminum ColIector Au or Ti/Ni/Ag 275 mil ■ Chip Thickness: 22 mils

PS 229

Abstract: A200V 5609 transistor TSB25020
Contextual Info: m CROSEfll CORP/POUER 57E D • b llS iS O DG0DS3Ö 5 ■ PTC 7 " - 3 3 - / 3 TSB25020 Power Transistor Chip, NPN 50 A, 200 V, tf = 50ns ■ Planar Epitaxial ■ Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils

Contextual Info: MICR OSE MI C0RP/P0ÜIER S7E D tllSTSG DGGDS3ti T • PTC TSA55565 JM T C T TECHNOLOGY Power TVansistor Chip, NPN 55 A, 650 V, tf = 0.1 fis 280 mil ■ Planar Epitaxial ■ Contact Metallization: ■ Chip Thickness: 22 mils Base and Emitler-Aluminum Collector Au or Ti/Ni/Ag

Contextual Info: MICROSEMI CORP/POüJER B7E D • bllSTSD CICIQ053Q ñ ■ PTC T-^3~/3 TSA63065 J P T C TECHNOLOGY Power TVansistor Chip, NPN 30 A, 650 V, tf = 0.1 ps ■ Planar Epitaxial ■ Contact Metallization: Base and Emiller-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils

5609 transistor

Abstract: TSB125100
Contextual Info: 4SE D • b l l S I S G DD DD SS 7 Q5b ■ PTC niCROSEIlI C O R P / P O W E R 7 - 33 - / ^ TSB125100 Power Transistor Chip, NPN 25 A, 1000 V, tf= 50 ns ■ Planar Epitaxial ■ Contact Metallization: I Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils

10 16s capacitor smd

Abstract: 226 smd capacitor RSM 2322 2222 632 series capacitor MOV 103 M 3 KV 336 smd CAPACITOR 2312 344 7 SMD resistor 474 2222 631 series capacitor SMD electrolytic capacitor
Contextual Info: Information New products and highlights i Ceramic capacitors Information Page Multilayer ceramic capacitors, NP0 10 V - 4000 V Multilayer ceramic capacitors, X7R 10 V - 2000 V Multilayer ceramic capacitors, Y5V 10 V - 250 V General purpose, high voltage capacitors 1000 V to 3000 V X7R and Y5V

varistor 594 ph

Abstract: varistor 593 ph 593 PH VARISTOR NTC 220 ptc 585 ptc 594 vdr 594 ph smd fuse p varistor 594 datasheet vishay FUSE SMD tn
Contextual Info: Circuit Protection with Non-Linear Resistors r esistive p r oducts V I S H AY I N T E R T E C H N O L O G Y, I N C . P TC a nd NTC T he r mi sto r s, T hrough - Hole Va r isto r s, SMD T hin - Film Chip Fu se s capabilities w w w. v i s h a y. c o m Circuit Protection with Non-Linear Resistors

PTCEL

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . NON-LINEAR RESISTORS Resistive Products Size and Encapsulant Product Family NTCS SMD NTCS.SMT NTHS NTCC200/300 Ni barrier + tinned on T&R glass protected NEW 2K2 to 680K 2K to 100K 4K7 to 100K 100K to 210K

schematic diagram TECH 2

Contextual Info: SEM TECH Today*« Rauiki.1 January 20, 1999 Low Capacitance Surface Mount TVS for High Speed Data Interfaces LC03-6 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The LC03-6 transient voltage suppressor is designed to protect components which are connected to high

UL2651

Abstract: UL-2651 Sensor NTC 10K / 3435 ul2651 awg26 k 3850 10k 3435 NTC 10K 3435 ntc 2k2 smd 3528 NTCLE203
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . NON-LINEAR RESISTORS SMD NTC Thermistors Sensors Product Family Size and Encapsulant Lead Wire or Termination Characteristics Res. Range R25 Ω 0805 (2012 metric) 0603 (1608 metric) 0402 (1005 metric) Ni barrier +

NTCLE301

Abstract: ntc 2k2 Sensor NTC 10K / 3435 ul2651
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . NON-LINEAR RESISTORS Resistive Products Product Family SMD NTCS.SMT Lead Wire or Termination Characteristics 0805 2012 metric 0603 (1608 metric) Ni barrier + tinned on 0402 (1005 metric) T&R glass protected

BC components PTC SMD

Abstract: transistor BC 245 BC 245 C peel off voltage ptc application note ptc overload protection for telecommunication BC components polystyrene ptc Ni 1000 2322 661
Contextual Info: BC Components Product specification Surface mount PTC thermistors for overload protection 2322 661 97. FEATURES • Ideal for pick-and-place circuit assembly • Low mounting height • Suitable for reflow soldering • Small ceramic diameter for faster response

ptc Ni 1000

Abstract: 2322 661
Contextual Info: BCcomponents DATA SHEET 2322 661 97. Surface mount PTC thermistors for overload protection Product specification Supersedes data of 17th May 1999 File under BCcomponents, BC02 2001 Feb 14 BCcomponents Product specification Surface mount PTC thermistors for overload protection

Contextual Info: THBT7011D Application Specific Discretes A DUAL O VERVO LTAG E PRO TECTIO N FOR TELECOM LINE PR ELIM IN ARY DATASHEET FEATURES • BIDIRECTIONAL CROWBAR PROTECTION. ■ PEAK PULSE CURRENT : lp p = 3 0 A fo r 10/1000|j,s surge. ■ HOLDING C URRENT: Ih = 150mA.

PTC SMD

Contextual Info: BCcomponents DATA SHEET 2322 661 97. Surface mount PTC thermistors for overload protection Product specification Supersedes data of 17th May 1999 File under BCcomponents, BC02 2000 Oct 13 BCcomponents Product specification Surface mount PTC thermistors for overload protection