PTB20 Search Results

PTB20101

Abstract: 470-860 mhz Power amplifier w 470-860 mhz Power amplifier 5 w 2X200 class ab power amplifier
Contextual Info: PTB20101 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .860 4L FLG DESCRIPTION: The ASI PTB20101 is Designed for General Purpose Class AB Power Amplifier Applications up to 860 MHz. FEATURES: • 175 W, 470-860 MHz • Silicon Nitride Passivated • Omnigold Metalization System

PTB20157A

Contextual Info: PTB20157A NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 320 2L FLG DESCRIPTION: The ASI PTB20157A is designed for Class C, Common Base both CW and PEP Applications from 1.35 to 1.85 GHz. FEATURES INCLUDE: • POUT 20 W  Gain 6.0 dB min.  Silicon Nitride Passivated

PTB20038

Abstract: PTB23005X
Contextual Info: PTB20038 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 6L FLG The ASI PTB20038 is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz. FEATURES: • 25 W, 860-900 MHz • Silicon Nitride Passivated • Omnigold Metalization System

ptb20134

Abstract: LB0A
Contextual Info: ERICSSON ^ PTB20134 30 Watts, 860 - 900 MHz Cellular Radio RF Power Transistor Key Features Description • • • • The 20134 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 860-900 MHz frequency band. It is rated at 30 Watts minimum output power and

SD1393

Abstract: sd1393 01 ST cross reference "Industry Part" Replacement PTB20004 ptb20011 ptb20081 SD4575 sd4701 sd57060
Contextual Info: June 1999 ST CROSS REFERENCE WITH ERICSSON INDUSTRY PART NUMBER PTB20003 PTB20004 PTB20005 PTB20006 PTB20007 PTB20008 PTB20011 PTB20017 PTB20030 PTB20031 PTB20081 PTB20091 PTB20095 PTB20097 PTB20111 ST REPLACEMENT PREFERENCE SD1398 SD4701 SD1423 SD1398 SD4701

PTB20111

Contextual Info: PTB20111 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI PTB20111 is Designed for General Purpose Class AB Power Amplifier Applications up to 900 MHz. FEATURES: • 25 W, 860-900 MHz • Silicon Nitride Passivated • Omnigold Metalization System

Contextual Info: PTB20156B NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 320 2L FLG DESCRIPTION: The ASI PTB20156B is designed for Class C, Common Base both CW and PEP Applications from 1350 MHz to 1850 MHz. FEATURES INCLUDE: • POUT 8.0 W  Gain 6.0 dB min.  Silicon Nitride Passivated

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number: K51P100M72SF1 Rev. 2, 4/2012 K51P100M72SF1 K51 Sub-Family Supports: MK51DX256CLL7, MK51DX256CML7 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V

Contextual Info: Freescale Semiconductor Data Sheet: Advance Information K30 Sub-Family Document Number: K30P144M100SF2V2 Rev. 1, 6/2012 K30P144M100SF2V2 Supports the following: MK30DX128VLQ10, MK30DX128VMD10, MK30DX256VLQ10, MK30DX256VMD10, MK30DN512VLQ10, MK30DN512VMD10

kinetis k53

Abstract: TS 6811
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information K53 Sub-Family Document Number: K53P144M100SF2V2 Rev. 1, 6/2012 K53P144M100SF2V2 Supports the following: MK53DN512CLQ10, MK53DN512CMD10, MK53DX256CLQ10, MK53DX256CMD10 Features • Operating Characteristics

MK60FX512VLQ15

Abstract: MK60FN1M0VLQ15 K60P144
Contextual Info: Freescale Semiconductor Data Sheet: Technical Data K60 Sub-Family Document Number: K60P144M150SF3 Rev. 4, 10/2012 K60P144M150SF3 Supports the following: MK60FX512VLQ15, MK60FN1M0VLQ15, MK60FX512VMD15, MK60FN1M0VMD15 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V

K21P144M120SF5

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data K21 Sub-Family Data Sheet Document Number: K21P144M120SF5 Rev. 3, 08/2013 K21P144M120SF5 Supports the following: MK21FX512VLQ12, MK21FN1M0VLQ12, MK21FX512VMD12, MK21FN1M0VMD12 Features • Operating Characteristics

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data K52 Sub-Family Document Number: K52P144M100SF2V2 Rev. 3, 6/2013 K52P144M100SF2V2 Supports the following: MK52DN512CLQ10, MK52DN512CMD10 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data K40 Sub-Family Document Number: K40P144M100SF2V2 Rev. 3, 6/2013 K40P144M100SF2V2 Supports the following: MK40DX128VLQ10, MK40DX128VMD10, MK40DX256VLQ10, MK40DX256VMD10, MK40DN512VLQ10, MK40DN512VMD10 Features

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data K30 Sub-Family Document Number: K30P121M100SF2V2 Rev. 3, 6/2013 K30P121M100SF2V2 Supports the following: MK30DN512VMC10 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V

MK60DN512VMC10

Abstract: fflash memory 32 pin
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information K60 Sub-Family Document Number: K60P121M100SF2V2 Rev. 1, 6/2012 K60P121M100SF2V2 Supports the following: MK60DN256VMC10, MK60DX256VMC10, MK60DN512VMC10 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V

Contextual Info: Freescale Semiconductor Data Sheet: Advance Information K51 Sub-Family Document Number: K51P144M100SF2V2 Rev. 1, 6/2012 K51P144M100SF2V2 Supports the following: MK51DN256CLQ10, MK51DN256CMD10, MK51DN512CLQ10, MK51DN512CMD10 Features • Operating Characteristics

MK20DX256

Abstract: MK20DN512VMC10
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information K20 Sub-Family Document Number: K20P121M100SF2V2 Rev. 1, 6/2012 K20P121M100SF2V2 Supports the following: MK20DX256VMC10, MK20DN512VMC10 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V

98ASS23177W

Contextual Info: Freescale Semiconductor Data Sheet: Advance Information K52 Sub-Family Document Number: K52P144M100SF2V2 Rev. 1, 6/2012 K52P144M100SF2V2 Supports the following: MK52DN512CLQ10, MK52DN512CMD10 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V

MK60DN512

Abstract: K60P144 MK60DN256 MK60DN512VLQ10 K60P144M100SF2V2 MK60DN512VMD10 98AS k336 144LQFP20 K60 144 LQFP
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information K60 Sub-Family Document Number: K60P144M100SF2V2 Rev. 1, 6/2012 K60P144M100SF2V2 Supports the following: MK60DN256VLQ10, MK60DX256VLQ10, MK60DN512VLQ10, MK60DN256VMD10, MK60DX256VMD10, MK60DN512VMD10

Contextual Info: Freescale Semiconductor Data Sheet: Advance Information K40 Sub-Family Document Number: K40P144M100SF2V2 Rev. 1, 6/2012 K40P144M100SF2V2 Supports the following: MK40DX128VLQ10, MK40DX128VMD10, MK40DX256VLQ10, MK40DX256VMD10, MK40DN512VLQ10, MK40DN512VMD10

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data K20 Sub-Family Document Number: K20P144M100SF2V2 Rev. 3, 6/2013 K20P144M100SF2V2 Supports the following: MK20DX128VLQ10, MK20DX128VMD10, MK20DX256VLQ10, MK20DX256VMD10, MK20DN512VLQ10, MK20DN512VMD10 Features

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data K10 Sub-Family Document Number: K10P100M100SF2V2 Rev. 3, 6/2013 K10P100M100SF2V2 Supports the following: MK10DN512VLL10 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V

Contextual Info: Freescale Semiconductor, Inc. Data Sheet: Technical Data K63P144M120SF5 Rev 3, 04/2014 Kinetis K63F Sub-Family Data Sheet MK63FN1M0VLQ12 MK63FN1M0VMD12 120 MHz ARM Cortex®-M4-based Microcontroller with FPU The K63 product family features high memory densities, low