PTB 20200 Search Results

Contextual Info: ERICSSON ^ Contents PTB 20030. 5-7 PTB 20031 . 5-15 PTB 20200. 5-11

PTB 20200

Contextual Info: e PTB 20200 30 Watts, 380–500 MHz RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380–500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20200 30 Watts, 450 - 490 MHz Cellular Radio RF Power Transistor Preliminary Description Key Features The 20200 is a class AB, NPN, common emitter RF Power Transistor intended for 24 V D C operation across the 450-490 MHz frequency band. It is rated at 30 Watts minimum output

PTB 20200

Contextual Info: ERICSSON ^ PTB 20200 30 Watts, 380-500 MHz Cellular Radio RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380-500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP

PTB 20200

Contextual Info: e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier

Contextual Info: ERICSSON ^ PTB 20031 40 Watts, 420 - 470 MHz Cellular Radio RF Power Transistor Description Key Features The 20031 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 420470 MHz frequency band. It is rated at 40 Watts minimum

Contextual Info: ERICSSON ^ 20167 60 Watts, 850 - 960 MHz RF Power Transistor Preliminary PTB Key Features Description The 20167 is a NPN, common base RF Power Transistor in­ tended for 24 VDC operation across the 850 - 960 MHz frequency band. It is rated at 60 Watts minimum output power and may be

Contextual Info: ERICSSON ^ PTB 20200 30 Watts, 380-500 MHz Cellular Radio RF Power Transistor D escription The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 38 0 -5 0 0 MHz. Rated at 30 watts m inim um outp ut power, it m ay be used fo r both CW and PEP

TRANSISTOR 955 E

Abstract: PTB 20148 35 W 960 MHz RF POWER TRANSISTOR NPN IC 935 965 transistor
Contextual Info: e PTB 20148 60 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP

9434

Abstract: PTB 20200 PTB 20171 transistor b 1166 transistor 9350
Contextual Info: e PTB 20171 25 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20171 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25 watts minimum output power, it may be used for both CW and PEP

9434

Abstract: PTB 20004
Contextual Info: e PTB 20004 50 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20004 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 50 watts minimum output power, it may be used for

Ericsson RF POWER TRANSISTOR

Contextual Info: e PTB 20038 25 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20038 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 25 watts minimum output power, it may be used for

PTB 20053

Abstract: PTB 20200
Contextual Info: e PTB 20053 60 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20053 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20038 25 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20038 is a class AB, NPN, common emitter R F power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 25 watts minimum output power, it may be used for

20097

Abstract: 35 W 960 MHz RF POWER TRANSISTOR NPN
Contextual Info: e PTB 20097 40 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20097 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 40 watts minimum output power, it may be used for

20031

Abstract: 9434
Contextual Info: e PTB 20031 40 Watts, 420–470 MHz RF Power Transistor Description The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and PEP

lc 945 transistor

Abstract: transistor LC 945 TRANSISTOR 955 E 965 transistor 35 W 960 MHz RF POWER TRANSISTOR NPN
Contextual Info: ERICSSON $ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP

pin diagram of RS 485

Abstract: 3 Pin Screw Terminal Block Connector 850E
Contextual Info: Extract from the online catalog PSI-MOS-RS422/FO 850 E Order No.: 2708355 FO converter with integrated optical diagnosis, alarm contact, for RS-422/RS-485 4-wire/ INTERBUS to 2 Mbps, terminal equipment

iic to RS-232 converter

Abstract: 9 pin diagram of RS 232 connector PTB 06 ATEX 2042 U
Contextual Info: Extract from the online catalog PSI-MOS-RS232/FO 850 E Order No.: 2708371 FO converter with integrated optical diagnosis, alarm contact, for RS-232 interfaces up to 115.2 kbps, terminal equipment with an FO

transistor b 1166

Abstract: IC 935 947 transistor
Contextual Info: ERICSSON ^ P TI R o n i7 l D ¿ U 1 f i Preliminary r 25 Watts, 935 - 960 MHz Cellular Radio RF Power Transistor Key Features Description The 20171 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 935 - 960

resistor smd 470

Abstract: PTH08T210WAZT PTH08T210WAD
Contextual Info: PTH08T210W www.ti.com SLTS262A – OCTOBER 2005 – REVISED NOVEMBER 2005 30-A, 5.5-V to 14-V INPUT, NON-ISOLATED, WIDE OUTPUT ADJUST, POWER MODULE w/TurboTrans FEATURES • • • • • • • • • • Up to 30-A Output Current 5.5-V to 14-V Input Voltage

Contextual Info: PTH05T210W www.ti.com . SLTS263I – AUGUST 2007 – REVISED MARCH 2009 30-A, 5-V INPUT, NON-ISOLATED, WIDE OUTPUT ADJUST, POWER MODULE w/ TURBOTRANS

PTH05T210W

Abstract: PTH05T210WAD PTH05T210WAH PTH05T210WAS PTH05T210WAZ TMS320
Contextual Info: PTH05T210W www.ti.com . SLTS263I – AUGUST 2007 – REVISED MARCH 2009 30-A, 5-V INPUT, NON-ISOLATED, WIDE OUTPUT ADJUST, POWER MODULE w/ TURBOTRANS

TRANSISTOR SMD MARKING CODE fk

Abstract: PTH08T210W PTH08T210WAD PTH08T210WAS PTH08T210WAZ TMS320 6PTB477MD8TER
Contextual Info: PTH08T210W www.ti.com SLTS262B – OCTOBER 2005 – REVISED NOVEMBER 2005 30-A, 5.5-V to 14-V INPUT, NON-ISOLATED, WIDE OUTPUT ADJUST, POWER MODULE w/TurboTrans FEATURES • • • • • • • • • • • Up to 30-A Output Current 5.5-V to 14-V Input Voltage