PT5116 Search Results

Contextual Info: 50Ａ Ａvg 1600 Ｖolts ＤＩＯＤＥ •回路図 CIRCUIT ■外形寸法図 PT5116 OUTLINE DRAWING Dimension:［mm］ ■最大定格 Ｍaximum Ratings 項 目 Parameter くり返しピーク逆電圧 Repetitive Peak Reverse Voltage 非くり返しピーク逆電圧

dac 4bit

Contextual Info: PT5116 5+1CH Motor Driver FEATURES • • • • • • • • • • An ultra-fine CMOS process has been adopted for low power consumption in a design with no charge-pump. A small 28-pin QFN package 4*4mm has been adopted. All bridges can be driven simultaneously.

Contextual Info: DIODE 50A Avg 1200~1600 Volts •回路図 CIRCUIT PT5112 PT5116 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） ＋ AC1 AC2 AC3 − ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 ＊1 Repetitive Peak Reverse Voltage

Contextual Info: PT5116 5+1CH Motor Driver An ultra-fine CMOS process has been adopted for low power consumption in a design with no charge-pump. A small 28-pin QFN package 4*4mm has been adopted. All bridges can be driven simultaneously. Constant-Voltage control H-bridges Drive; Accuracy 5%(at CV DAC=4.0V)

pt5116

Abstract: PT5112
Contextual Info: DIODE MODULE PT5112 PT5116 50A/1200V/1600V OUTLINE DRAWING FEATURES * Isolated Base * 3 Phase Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184 ﾈｼﾞ TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Parameter Repetitive Peak Reverse Voltage *1

28-pin QFN motor driver

Abstract: PT5116
Contextual Info: PT5116 5+1CH Motor Driver FEATURES • • • • • • • • • • An ultra-fine CMOS process has been adopted for low power consumption in a design with no charge-pump. A small 28-pin QFN package 4*4mm has been adopted. All bridges can be driven simultaneously.

PT5112

Abstract: PT5116
Contextual Info: DIODE 50A Avg 1200~1600 Volts •回路図 CIRCUIT PT5112 PT5116 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） ＋ AC1 AC2 AC3 − ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 ＊1 Repetitive Peak Reverse Voltage

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ