PSWT 160 Search Results

PSWT 90

Abstract: pswt
Contextual Info: Thyristor Modules PSWT 90 PSYT 90 ITRMS = VRRM = 165 A 800 - 1600 V Preliminary Data Sheet V RSM V DSM 900 1300 1500 1700 Symbol V RRM V DRM 800 1200 1400 1600 Type PSWT 90/08 PSWT 90/12 PSWT 90/14 PSWT 90/16 Type PSYT 90/08 PSYT 90/12 PSYT 90/14 PSYT 90/16

PSWT 160

Contextual Info: Thyristor Modules PSWT 160 PSYT 160 ITRMS VRRM = 180 A = 800 - 1600 V Preliminary Data Sheet V RSM V DSM 900 1300 1500 1700 Symbol V RRM V DRM 800 1200 1400 1600 Type PSWT 160/08 PSWT 160/12 PSWT 160/14 PSWT 160/16 Type PSYT 160/08 PSYT 160/12 PSYT 160/14

PSWT 70

Contextual Info: Thyristor Modules PSWT 70 PSYT 70 ITRMS VRRM = 80 A = 800 - 1600 V Preliminary Data Sheet V RSM V DSM 900 1300 1500 1700 Symbol V RRM V DRM 800 1200 1400 1600 Type PSWT 70/08 PSWT 70/12 PSWT 70/14 PSWT 70/16 Type PSYT 70/08 PSYT 70/12 PSYT 70/14 PSYT 70/16

MJE13009

Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications

MJE1300S

Abstract: JE13005
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13005* Designer’s Data Sheet ‘Motorola Pr»f*rr*d Dcvie« SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

mj10025

Contextual Info: MOTOROLA SC XSTR S/R F 12E D | b 3 b 7 2 S ‘4 OGflSObfl MOTOROLA M | 9 MJ10024 MJ10025 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 2 0 AMPERE N PN S ILIC O N POWER D A R LIN G TO N TR A N S IS T O R S SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS

mje13009 equivalent

Abstract: mje13009L 2N2222 NPN Transistor features MJE13009 MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly

Contextual Info: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER RANSISTORS The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching

Transistor 3-354

Abstract: TRANSISTOR 3356 BUS98 BUS96 ad 142 transistor bus98a C 3355 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 850-1000 V (BVCES) The BUS98 and BUS98A transistors are designed for high-voltage, high-speed,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly

mje13009 equivalent

Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

mje13009 equivalent

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

2N2222 transistor output curve

Abstract: UTCMJE13003 MJE13003 transistor
Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

MJE13003

Abstract: MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .

Contextual Info: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching

JE1300

Abstract: JE13005 mje130
Contextual Info: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA M JE13005* D esigner’s Data Sheet ‘ M otorola Preferred Device S W IT C H M O D E S e rie s N PN S ilic o n P o w e r T ra n s is to rs These de vices are de sig ne d fo r h ig h -v o lta g e , h ig h -s p e e d pow er sw itching

k 3683 transistor

Abstract: MJ-13080
Contextual Info: MOTOROLA SC 15E D I fc3b75S4 0005127 S | XSTRS/R F MOTOROLA Ml13080 SEMICONDUCTOR TECHNICAL DATA D esig n er’s D ata S h eet 8 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 150 WATTS The MJ13080 tra n sisto r is designed fo r high -vo ltag e , high-speed,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited

mje13009l

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They