PSMN2R Search Results

PSMN2R5-30YL

Contextual Info: PSMN2R5-30YL N-channel TrenchMOS logic level FET Rev. 01 — 10 September 2008 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

transistor C982

Abstract: PSMN2R7-30PL
Contextual Info: PSMN2R7-30PL N-channel 30 V 2.7 mΩ logic level MOSFET Rev. 01 — 26 February 2010 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: PA K 33 PSMN2R8-25MLC LF N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 2 — 7 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is

Contextual Info: LF PA K 33 PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 7 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: TO -2 20A B PSMN2R6-60PS N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78 5 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools.

Contextual Info: I2P AK PSMN2R0-60ES N-channel 60 V 2.0 mΩ standard level MOSFET in I2PAK Rev. 01 — 17 January 2011 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: LF PA K 56 PSMN2R4-30YLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: LF PA K 56 PSMN2R0-30YLD N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 5 November 2013 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: D2 PA K PSMN2R2-40BS N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

PSMN2R6-40YS

Contextual Info: PSMN2R6-40YS N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET Rev. 01 — 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: TO -2 20A B PSMN2R1-40PL N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools.

PSMN2R8-40PS

Contextual Info: TO -2 20A B PSMN2R8-40PS N-channel TO220 40 V 2.8 mΩ standard level MOSFET 11 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: TO -22 0A B PSMN2R0-60PS N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 Rev. 02 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product

2C925L

Abstract: JESD22-A115 Af807
Contextual Info: LF PA K PSMN2R9-25YLC N-channel 25 V 3.15 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

2C630L

Abstract: JESD22-A115 PSMN2R6-30YLC
Contextual Info: LF PA K PSMN2R6-30YLC N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

Contextual Info: D2 PA K PSMN2R8-80BS N-channel 80 V, 3 mΩ standard level FET in D2PAK Rev. 1 — 28 September 2011 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

TO220 HEATSINK DATASHEET

Abstract: PSMN2R8-40PS
Contextual Info: PSMN2R8-40PS N-channel TO220 40 V 2.8 mΩ standard level MOSFET Rev. 01 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic

Contextual Info: TO -2 20A B PSMN2R0-60PSR N-channel 60 V, 2.2 mΩ standard level MOSFET in TO-220 using Trench Technology 25 June 2014 Product data sheet 1. General description Standard level gate drive N-channel enhancement mode MOSFET in TO-220 package using advanced TrenchMOS technology. This product has been designed and qualified

PSMN2R0-30YLE

Contextual Info: PSMN2R0-30YLE N-channel 30 V 2 mΩ logic level MOSFET in LFPAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: LF PA K 33 PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

2C225L

Abstract: PSMN2R2-25YLC JESD22-A115
Contextual Info: LF PA K PSMN2R2-25YLC N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

2D030L

Contextual Info: LF PA K 56 PSMN2R0-30YLD N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

2D430L

Abstract: 2D430
Contextual Info: LF PA K 33 PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology 1 October 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: D2 PA K PSMN2R8-80BS N-channel 80 V, 3 mΩ standard level FET in D2PAK Rev. 2 — 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic