PS1101R Search Results

Contextual Info: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution

Contextual Info: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution

Contextual Info: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution

Phototransistor reverse

Contextual Info: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution

PS1101RA

Contextual Info: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution

Contextual Info: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution

Phototransistor reverse

Contextual Info: PS1101RA Surface Mount Phototransistor/Reverse Mount Type Features Package Product features 3216 Reverse Mount type, Water clear epoxy ・Outer Dimension 3.2 x 1.6 x 1.1mm L x W x H ・Flat Lenz Type ・Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2) ・Wide Distribution

TRANSISTOR DNH

Abstract: PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector
Contextual Info: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number

Contextual Info: •PHOTO TRANSISTOR ▼CHARACTERISTICS BY MATERIAL Part No. » PS § tn f e T 502 A bsolute M axim um R atings CafecferfìM* Emifw-Cotectx Collector Operating j ' i i w p i l ; ' Bregfcbown Breakdown Current Temp. Vottage Dissipation Vöfegs Pd 60 100 Storage

Stanley PS5022

Abstract: DIODE PP602 KU163A PP701 DNP318U-4 DNP331 PP602 DNP1105W DNP319 PS5022
Contextual Info: OPTICAL SENSOR Super intensity infrared LEDs and photo detectors are used in these photo sensors. Stanley offers high quality and reliability in all of its sensors for use in optical disks, office automation equipment and optical connectors for surface mount devices.

DNP1105W

Abstract: pcb warpage DNP1102F PS1191RA LED Tr 1105W AN1101W AN1102F ps1101wa AN1105W
Contextual Info: SMT SHAPE - INFRARED LED n Infrared LED Shape Part No. Ta=25°C Features Peak Wavelength lP TYP. IF Radiant Intensity IE MIN. TYP. IF Output Power Po Cut-Off Frequency Fc TYP. MIN. TYP. IF Spatial Distribution The typical distribution example of each shape is shown below

DIODE PP602

Abstract: pp602 PP701 pp601 40 PP601 PP1101W PS1101RA PS1101WA PS1102HA PS1191RA
Contextual Info: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number