PROM 256X4 BIT Search Results

63ls1640

Contextual Info: High Performance Low Power Schottky Generic PROM Family s3/ 63ls x x x Features/ Benefits Description • Largest generic low power Schottky PROM family available The 53/63LSXXX series generic PROM fam ily offers the lowest power and fastest speeds available in the industry. The 4-bitwide PROMs range from 256x4 to 2048x4 and feature upward/

6331-1

Abstract: 6301-1 prom 6349-1 Monolithic Memories 6301 PROM programming 6309-1 6341 prom 6301-1 monolithic memories prom 5349 6306-1 prom 6309
Contextual Info: Generic NiCR PROM Family 53/63X X -1 Description Features/ Benefits The 53/63XX-1-series generic PROM fam ily offers the widest selection of sizes and organizations available in the industry. The 4-bit wide PROMs range from 256x4 to 2048x4 and feature upward/downward pin out com patibility in the space saving 16

N82S126

Abstract: 82S126 32 x 32 matrix prom 256x4 bit 82S129
Contextual Info: BIPOLAR MEMORY MAY 1982 1024-BIT BIPOLAR PROM 256x4 82S126 (O.C.)/82S129 (T.S.) DESCRIPTION FEATURES The 82S126 and 82S129 are field p ro g ra m ­ mable, w hich means th a t cu sto m patterns

prom 256x4 bit

Abstract: GDIP1-T16 82S129A/BEA 82S126A 82S129A GDFP2-F16 bipolar PROM 32 x 32 matrix
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 82S126A 82S129A 1K-bit TTL bipolar PROM 256x4 FEATURES DESCRIPTION • Address access time: 35ns max • Input loading: -150µA max • On-chip address decoding • Output options:

6331-1 prom

Contextual Info: Generic NiCR PROM Fam ily 53/63XXX-1 53/63XXX-2 F eatures/ Benefit Description • From 256 Bit to 8192 Bit memory The 53/63XX series generic PROM fam ily offers a w ide selection of size and organizations. The 4-bit w ide PROMs range from 256x4 to 2048x4 and feature up w ard/dow nw ard pin out com ­

prom 256x4 bit

Abstract: prom 82S126 82S126 82S129 82S129/BEA GDFP2-F16 GDIP1-T16 32 x 32 matrix
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 82S126 82S129 1K-bit TTL bipolar PROM 256x4 • Random logic • Code conversion FEATURES • Address access time: 60ns max • Input loading: -150µA max • On-chip address decoding

am27521

Abstract: 27s21 prom 256x4 bit AM27S21 AM27S21A AMD 27S21
Contextual Info: Am27S21 /27S21A Advanced Micro Devices 1,024-Bit 256x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs

27S21

Abstract: AmZ7S21 am27521 AMD 27S21 prom 256x4 bit AM27S21 AM27S21DC AM27S21A 27s25
Contextual Info: a Am27S21 /27S21A Adva^ 1,024-Bit 256x4 Bipolar PROM Devices DISTIN CTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • Low-current PNP inputs • High-current open-coliector and three-state outputs

27s21

Abstract: AMD 27S21 AM27S21 21A1
Contextual Info: Am27S21 /27S21A AdvaMcro 1,024-Bit 256x4 Bipolar PROM Devices DISTIN CTIVE CH ARA CTERISTICS • • • • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield Low-current PNP inputs High-current open-collector and three-state outputs

SIGNETICS* fusing procedure

Abstract: prom 256x4 bit Bipolar ROM 1K X 4 bipolar rom 256*4 82S27 N82S27
Contextual Info: signotics 1024-BIT BIPOLAR PROGRAMMABLE ROM 256X4 PROM 82S27 JULY 1975 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION The 82S27 is a Bipolar 1024-Bit Read Only Memory, organized as 256 words by 4 bits per word. It is FieldProgrammable, which means that custom patterns are

am27521

Abstract: AM27S21 27S21A AMD 27S21 27S21 prom 256x4 bit AM27S21A sc419 AM27S21/BEA
Contextual Info: 2 o 3 - 3 5 0 Am27S21 /27S21A Advanced Micro Devices 1,024-Bit 256x4 Bipolar PROM DISTINCTIVE CH A R A C T ER IST IC S • High speed • Highly reliable, ultra-fast programming Platinum-Silicide fuses • High programming yield • Low-current PNP inputs

82s129 programming

Abstract: 82s126 programming 82S129 N825129 82S126 N82S126 bipolar rom 256*4 S82S129 prom 82S126 signetics 82S129
Contextual Info: • s m n n t i P i : O iy iH - L I U d 1024- b i t b i p o l a r PROGRAMMABLE ROM 256x4 PROM F E B R U A R Y 1975 f i? ç i? R 82S129 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION The 82S126 (Open Collector Outputs) and the 82S129 (Tri-State Outputs) are Bipolar 1024-Bit Read Only Mem­

LC-6

Abstract: LC6500 LC6554
Contextual Info: CMOS 4-Bit Single-Chip Microcomputers LC6500 Series Overview The LC6500 Series CMOS 4-bit single-chip microcom­ puters were developed for small- to medium-scale products. They contain a common CPU, 0.5K to 8K bytes of ROM, 32 to 448 words of RAM, a timer, a clock generator, and highwithstand voltage ports on-chip FLT driver/controller that

Contextual Info: 82S126A Signelics 82S 129A IK-Bit TTL B ip o la r P R O M Product Specification Bipolar Memory Products DESCRIPTION FEATURES The 82S126A and 82S129A are field programmable, which means that cus­ tom patterns are immediately available by following the Signetics Generic I fus­

6301-1 prom

Abstract: 2708 eprom 6330 PROM programming 6331-1 prom 6306-1 prom MMI 6301-1 mmi 5349-1 MMI 6330 mmi 63xx 6331-1
Contextual Info: Standard Performance Schottky Generic PROM Family 53 /63XX-i Features/Benefits Description • Standard Schottky processing • Reliability proven nichrome fusible links qualified for MIL-M-38510 The 53/63XX-1 -series generic PROM family offers the widest

DIP-52S

Abstract: LC6510 FP30S
Contextual Info: CMOS 4-Bit Single-Chip Microcomputers LC65000 Series Overview The LC65000 Series CMOS 4-bit single-chip microcom­ puters with on-chip A/D converters can give application products higher added value, better performance, and lower cost. In order to handle all types of sensor output charac­

CAT22C12

Contextual Info: CAT22C12 CAT22C12 1024-BIT 256x4 NONVOLATILE CMOS STATIC RAM FEATURES DESCRIPTION The Catalyst CAT22C12 Nonvolatile Random Ac­ cess Memory (NVRAM) is a 1024-bit device with a 256x4 organization. It features fully static CMOS circuitry for very low power consumption. The ac­

Contextual Info: CAT22C12! CAT22C121 - Industrial Temperature 1024-BIT 256x4 NONVOLATILE CMOS STATIC RAM DESCRIPTION FEATURES The Catalyst CAT22C121 Nonvolatile Random Ac­ cess Memory (NVRAM) is a 1024-bit device with a 256x4 organization. It features fully static CMOS

Contextual Info: TOSHIBA TMP47P1670V CMOS 4-BIT MICROCONTROLLER TMP47P1670VN The 47P1670V is the system evaluation LSI of 47C1270 / 1670A with 128K bits one-time PROM. The 47P1670V programs/verifies using an adaptersocketto connect with PROM programmer, as it is in TMM27128AD.

Contextual Info: TO SH IB A TMP47P800 CMOS 4-BIT MICROCONTROLLER TMP47P800N TMP47P800F The 47P800 is the system evaluation LSI of 47C800 with 64K bits one-time PROM. The 47P800 programs / verifies using an adapter socket to connect with PROM programmer, as it is in TMM2764D.

52212HR

Abstract: IN3064 256X4 ncr 400 256x4 static ram
Contextual Info: C 52212 R 1K BIT 2 5 6 x 4 NVRAM 1K Bit Static RAM backed by 1K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit E2PROM Changes SRAM Cycle Time less than 300 ns • • • • Power-Failure Protection Unlimited Recall Cycles

K0311

Abstract: TMM2764D 47C800 BM1108 QFP44 TMP47P800 TMP47P800F TMP47P800N GF38 5DIP42
Contextual Info: TMP47P800 TO SH IBA CMOS 4-BIT MICROCONTROLLER TMP47P800N TMP47P800F The 47P800 is the OTP microcontroller with 64kbits EPROM. For program operation, the programming is achieved by using with EPRO M programmer TMM2764D type and adapter socket (B M 1 108).

27s21

Contextual Info: Am27S20/21 Am27S20/21 1,024-Bit 256 x 4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • Low-current PNP inputs • High-current open-collector and three-stat

27S20

Abstract: AM27S20 Am2910
Contextual Info: Am27S20/21 Am27S20/21 1,024-Bit 256 x 4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast fuses High programming yield e Low-current PNP inputs programming Platinum-Silicide• High-current open-collectorand three-state outputs