PROCESS OF MOSFET Search Results

Contextual Info: MIC4423/4424/4425 Dual 3A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new MIC4426 family of

D16N05

Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
Contextual Info: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

Contextual Info: RFD14N05, RFD14N05SM Data Sheet 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding

MARKING WL

Abstract: FDZ193P
Contextual Info: FDZ193P P-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90mΩ Features tm General Description „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.7V PowerTrench® process with state of the art "low pitch" WLCSP packaging process, the

Contextual Info: FDZ193P P-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90m: Features tm General Description „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Designed on Fairchild's advanced 1.7V PowerTrench® process with state of the art "low pitch" WLCSP packaging process, the

certificate of compliance jantx

Abstract: RFF60P06 RFG60P06E 8S1A rfg60p06
Contextual Info: RFF60P06 Data Sheet September 1998 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding

Contextual Info: RFD16N05L, RFD16N05LSM Data Sheet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,

Contextual Info: MIC4426/4427/4428 Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC4426/4427/4428 fam ily of buffer/drivers are built using a new, highly reliable BiCM O S/DM O S process. They are im proved versions of the M IC426/427/428 fam ily of buffer/

14N05

Abstract: 14n05l 05LSM AN7254 AN9321 AN9322 RFD14N05L RFD14N05LSM RFD14N05LSM9A TB334
Contextual Info: RFD14N05L, RFD14N05LSM Data Sheet 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

7n10l

Abstract: RFD7N10LESM 7n10le AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Contextual Info: RFD7N10LE, RFD7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

Contextual Info: RFD16N03L, RFD16N03LSM Semiconductor April 1999 Data Sheet 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

transistor RFP25N05

Abstract: AN7254 AN7260 AN9321 AN9322 RFP25N05 TB334
Contextual Info: RFP25N05 Data Sheet January 2002 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Features • 25A, 50V The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits,

Contextual Info: 05-Oct-2010 Rectifiers Introduction to DIODESTAR Rectifiers Presentation focused on 600V Rectifiers for power supply PFC stages - A New Technology • DIODESTAR™ is a proprietary process platform that combines the expertise of the MOSFET and Bipolar process technology

d8p05

Abstract: RFP8P05 RFD8P05 RFD8P05SM RFD8P05SM9A TB334 23842
Contextual Info: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs 2384.2 Features • 8A, 50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

2P03L

Abstract: 2p03
Contextual Info: RFT2P03L Semiconductor Data Sheet October 1998 2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET Features This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives

mosfet motor dc 48v

Abstract: AN9321 AN9322 RF1S45N06LESM RF1S45N06LESM9A RFP45N06LE TB334
Contextual Info: RFP45N06LE, RF1S45N06LESM Data Sheet 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization

M2SK3295

Abstract: M2SK3354 2SK2499 2SK3296 M2SK3355 umos varistor 2754 2SK3355 PA1700A PA1707
Contextual Info: LINEUP POWER MOSFET SERIES UMOS II Kazuhiro Yamada UMOS I process Planar process G S i UMOS II process G S S G n+ n+ n+ p p p n- n- n- n+ n+ i D i D n+ D Fig. 1 Cross Sectional View of Cell Structure Ron Ω N channel VDSS: 60 V Package: TO-220 RDS(on) indicates the TYP value

MIC4451

Contextual Info: MIC445174452 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features BiCMOS/DMOS Construction Latch-Up Proof: Fully Isolated Process is Inherently Immune to Any Latch-up. Input Will Withstand Negative Swing of Up to 5V Matched Rise and Fall Times.25ns

Contextual Info: RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

FDZ493P

Abstract: BGA mosfet
Contextual Info: FDZ493P tm P-Channel 2.5V Specified PowerTrench BGA MOSFET –20V, –4.6A, 46mΩ Features General Description Combining Fairchild's advanced 2.5V specified PowerTrench® process with state of the art BGA packaging process, the FDZ493P minimizes both PCB space and rDS on . This BGA

RFP22N10

Abstract: TA9845
Contextual Info: ASSESS? RFP22N10, RF1S22N10, RF1S22N10SM 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs Aprii 1998 Description Features 22A,100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

RFT1P06E

Abstract: TB334 39e6
Contextual Info: RFT1P06E Data Sheet August 1999 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET File Number 4495.1 Features • 1.4A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

Logic Level N-Channel Power MOSFET

Abstract: AN7260 RFP25N05L TB334 AN7254
Contextual Info: RFP25N05L Data Sheet January 2002 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET Features • 25A, 50V The RFP25N05L is an N-Channel logic level power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of

f14n05l

Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives