PROCESS Search Results

2sc3310

Contextual Info: 2SC3310 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm SW ITCH IN G REGULATOR A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. HIGH SPEED D C-DC CONVERTER APPLICATIONS. • • Excellent Switching Times : tr =1.0//s (Max.), tf=1.0/us (Max.) at Iç = 4A

Contextual Info: RN4604 RN4604 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT U n it in mm A N D DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in SM6 (Super Mini Type w ith 6 leads) • W ith B uilt-in Bias Resistors • Sim plify C ircuit Design • Reduce a Q uantity of P arts and M anufacturing Process

2SD1294

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain

Contextual Info: SN74BCT29854 8-BIT TO 9-BIT PARITY BUS TRANSCEIVER S C B S 257- SEPTEMBER 1987 - REVISED NOVEMBER 1993 DW OR NT PACKAGE • BICMOS Process With TTL Inputs and Outputs T O P V IE W • State-of-the-Art BICMOS Design Significantly Reduces Standby Current

2sc2824

Abstract: 2SA1184
Contextual Info: TOSHIBA íDISCRETE/OPTOJ Ib DE I TDTTESD a007Etob M |~~ Y ' 9097250 T O SH IB A DISCRETE/ OP TO 56C 07266 ' D JT- 3 1 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) S 2 A 1 1 8 4 Unit in mra AUDIO FREQUENCY POWER A M P L I F I E R APPLICATION S. 7.9 MAX. ^3.1d-Ql5

TRANSISTOR Marking XB PNP

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity

Contextual Info: UT54 ACS 153/UT54ACTS153 Radiation-Hardened Quadruple 4 to 1 Multiplexers PINOUTS FEATURES • 16-Pin D IP Top View 1.2n radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QM L Q o r V processes Flexible package

LVC244

Contextual Info: I SN74LVC241 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS SGAS343 - MARCH 1994 DB, DW, OR PW PACKAGE TOP VIEW E P IC (Enhanced-Performance Implanted CMOS) Submicron Process Typical V q lp (Output Ground Bounce) < 0.8 V at Vc c = 3.3 V, TA = 25°C Typical V q HV (Output V qh Undershoot)

A9RV

Abstract: 5s a315 A327
Contextual Info: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

Contextual Info: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)

Toshiba TB 1230 N

Abstract: TMPZ84C011 TMPZ84C011A TMP284C011 FO34
Contextual Info: TOSHIBA TMPZ84C011A 3. OPERATIONAL DESCRIPTIONS 3.1 ENTIRE BLOCK DIAGRAM AND OPERATION OF EACH BLOCK 3.1.1 Entire Block Diagram 110489 Figure 3.1.1 Entire Block Diagram MPUZ80-302 TOSHIBA TMPZ84C011A 3.1.2 Operation of Each Block The TMPZ84C011A largely consists of a processor MPU , a counter/timer circuit

1117F

Contextual Info: T O S H IB A RN1112F,RN1113F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R •m N ■ 1117F 'm m m m m g R N 1 1 1 3 F■ m m m 'm m m m m tr SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors

Contextual Info: SN74LVC540 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS JA N U A R Y 1993 • Space-Saving Package Option: Shrink Small-Outline Package DB Features EIAJ 0.65-mm Lead Pitch DB, DW, OR PW PACKAGE (TOP VIEW) • EPIC (Enhanced-Performance implanted CMOS) Submicron Process

Contextual Info: RN6006 RN6006 MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. U n it in m m 1,6M A X . 1.7M AX. m - W ith B u ilt-in B ias R esistors S im p lify C irc u it D esign R educe a Q u a n tity of P a r ts a n d M a n u fa c tu rin g Process

TY 2016 thyristor

Abstract: Toshiba thyristors TOSHIBA Thyristor
Contextual Info: 5. R ELIA BILITY OF SEM ICONDUCTOR 5.1 to pro ducts are evaluated and when quality and reliability are confirm ed, next step o f the trial mass production proceeds. At the trial mass production step, stability of m anufacturing processes is evaluated p repo n­

2SB907

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB907 U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. High DC Current Gain : hFE(l) =2000 (Min.) (Vc e = - 2V, I c = - 1 A ) Low Saturation Voltage

Contextual Info: 2SA1893 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm ST O R O B E FLASH A PPLIC A TIO N S. M E D IU M P O W E R A M P L IF IE R A PPLIC A TIO N S. = 100~320 (V c e = - 2V, l 0 = —0.5A) hFE = 70 (M in.)(V cE = —2V, I c = - 4 A ) Low Collector Saturation Voltage

TSS3J44S

Abstract: TSS3G44S TSS3G44 TSS3G4 tss3j44 44SE
Contextual Info: SOLID STATE AC RELAY TSS3 G,J 44S OPTICALLY ISOLATED, ZERO VOLTAGE TU R N- O N , Z E R O CUR R E NT T U R N - O F F , NORMA L L Y OPEN S SR . Unit in mm COMPUTER P E R I P H E R A L S 4 3 MAX 12 MAX M ACHI NE T O O L CONTROL S PROCESS CO NTROL SYSTE MS T R A F F I C C O NT R O L SYSTEMS

TCD1300D

Contextual Info: TOSHIBA TCD1300D TOSHIBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device TCD1 3 0 0 D The TCD1300D is a high sensitive and low dark current 3648-elements linear image sensor. The sensor can be used for facsimile, imagescanner and OCR. The signal pre­ processing circuit which is composed of Sample and Hold

4A04I

Abstract: tc514100a
Contextual Info: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

2N5551

Contextual Info: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage

BE423

Contextual Info: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­

Contextual Info: SN74LVC137 3-LINE TO 8-LINE DECODER/DEMULTIPLEXER WITH ADDRESS LATCHES SCAS340 - MARCH 1994 » EPIC Enhanced-Performance Implanted CMOS Submicron Process • Typical V o lp (Output Ground Bounce) D, DB, OR PW PACKAGE (TOP VIEW) A[ B[ c[ Ü2A [ S2B[ G1[

TC514170BJ-80

Abstract: tc514170 TC514170BJ80
Contextual Info: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques