PRI 505 Search Results

pri 505

Contextual Info: ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.50mH Min @ 100KHz ,50mV, 25ºC PRI Turns Ratio : 1CT:1.5CT ±5% PRI: SEC PRI DC Resistance: 0.70 Ohms Max @25ºC PRI / SEC Interwinding Capacitance : 40pF Max @ 100KHz ,50mV PRI Leakage Inductance: 0.80µH Maximum @ 100KHz ,50mV SEC Shorted

pri 505

Contextual Info: ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.20mH Min @ 100KHz ,50mV, 25ºC PRI Turns Ratio : 1CT:2.42CT ±5% PRI: SEC PRI DC Resistance: 0.70 Ohms Max @25ºC PRI / SEC Interwinding Capacitance : 25pF Max @ 100KHz ,50mV PRI Leakage Inductance: 0.60µH Max @ 100KHz ,50mV SEC Shorted

pri 505

Contextual Info: ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.20mH Min @ 100KHz ,50mV, 25ºC PRI Turns Ratio : 1CT:2.4CT ±5% PRI: SEC PRI DC Resistance: 0.30 Ohms Max @25ºC PRI / SEC Interwinding Capacitance : 15pF Maximum @ 100KHz ,50mV PRI Leakage Inductance: 0.30µH Maximum @ 100KHz ,50mV SEC Shorted

pri 505

Contextual Info: ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.20mH Minimum @ 100KHz ,50mV, 25ºC PRI Turns Ratio : 1CT:2CT ±5% PRI: SEC PRI DC Resistance: 0.70 Ohms Maximum @25 ºC PRI / SEC Cw/w : 30pF Maximum @ 100KHz ,50mV PRI Leakage Inductance: 0.60µH Maximum @ 100KHz ,50mV SEC Shorted

pri 505

Contextual Info: ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.20mH Min @ 100KHz ,50mV, 25ºC PRI Turns Ratio : 1CT:2.42CT ±5% PRI: SEC PRI DC Resistance: 0.70 Ohms Max @25ºC PRI / SEC Interwinding Capactince : 25pF Max @ 100KHz ,50mV PRI Leakage Inductance: 0.60µH Max @ 100KHz ,50mV SEC Shorted

505 transformer

Contextual Info: ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.20mH Min @ 100KHz ,50mV, 25ºC Turns Ratio PIN1-3 :(PIN16-14) : 1CT:2CT ±5% Turns Ratio(PIN6-8):(PIN11-9) : 1:1 ±5% PRI DC Resistance: 0.70 Ohms Max @25ºC PRI / SEC Interwinding Capacitance : 30pFMax @ 100KHz ,50mV

Contextual Info: ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.20mH Min @ 100KHz ,50mV, 25ºC Turns Ratio PIN6-8 :(PIN11-9): 1CT:2CT ±5% Turns Ratio (PIN14-16):(PIN1-3): 1CT:2.3CT ±5% PRI DC Resistance: 0.90 Ohms Max @25ºC PRI / SEC Interwinding Capacitance : 30pF Max@ 100KHz ,50mV

RESIStance 100 OHMS

Abstract: SMD DC isolation transformer
Contextual Info: ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.20mH Min @ 100KHz ,50mV, 25ºC Turns Ratio Pri:sec ±5% : 1:2CT & 1:2CS PRI DC Resistance: 1.00 Ohms Max @25ºC PRI / SEC Interwinding Capacitance : 35pF Max @ 100KHz ,50mV Leakage Inductance: 0.50 µH &1.00 µH Max @ 100KHz ,50mV SEC Shorted

ACES

Contextual Info: ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.20mH Min @ 100KHz ,50mV, 25ºC Turns Ratio PIN16-14 :(PIN1-3) : 1:1.36CT ±5% Turns Ratio (PIN6-8):(PIN11-9) : 1:2CT ±5% PRI DC Resistance: 1.00 Ohms Max @25ºC PRI / SEC Interwinding Capacitance : 30pF Max @ 100KHz ,50mV

Contextual Info: ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.20mH Min @ 100KHz ,50mV, 25ºC Turns Ratio PIN6-8 :(PIN11-9): 1CT:1CT ±5% Turns Ratio (PIN1-3):(PIN16-14): 1CT:1.36CT ±5% PRI DC Resistance: 0.70 Ohms Max@25º C PRI / SEC Interwinding Capacitance : 30pF Max @ 100KHz ,50mV

Contextual Info: ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.00mH Min @ 100KHz ,50mV, 25ºC Turns Ratio PIN1-3 :(PIN16-14) : 1:2/2.4 ±5% Turns Ratio (PIN6-8):(PIN11-9) : 1:0.79/1 ±5% PRI DC Resistance: 0.80 Ohms Max @25ºC PRI / SEC Interwinding Capacitance : 35pF Max @ 100KHz ,50mV

T-13800

Abstract: T-13803 13800 T1-BOBIN T-13805 SMD23 1200 w 45 khz transformer 13803 smd 27 9 D transformer 9-0-9
Contextual Info: Transformers for T1 / CEPT / PCM Applications Available in both Thru-hole & SMD EP7 Packages Schematic "A" PRI. Schematic "B" Schematic "C" PRI. SEC. SEC. 1 6 2 5 3 4 6 2 5 3 4 1 1 2 1 Schematic "D" PRI. SEC. 6 75 Ω 5 2 100 Ω 6 3 3 120 Ω 4 4 Electrical Specifications at 25OC

Contextual Info: T1 / CEPT / ISDN PRI SMD Transformers Dual Configuration For T1/CEPT/ISDN PRI Telecom Applications 1500 VRMS minimum Isolation - Selected units 2000 VRMS Small footprint / Surface Mount 50 mil style package Designed to meet CCITT and FCC Requirements Custom Designs Available

EPA3372S

Abstract: PEB2254 15 3kv SEC
Contextual Info: T1/CEPT/ISDN-PRI Transformer EPA3372S ELECTRONICS INC. • Optimized for Siemens PEB2254 Series T1/ISDN Controllers • • Dual Transformer in SMD Package • • High Isolation between Pri-Sec. min 3kV • • For compliance with regulatory specifications, •

Contextual Info: ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.20mH Min @100KHz,50mV Turns Ratio Pri:Sec : 1CT:2.42CT & 1CT:2.42CT ±5 PRI DCResistance: 0.70 Ohms Max @25°C SEC DCResistandce: 1.20 Ohms Max @25° Interwindig Capacitance: 25pF Max @100KHz,50mV Leakage Inductance: 0.60uH Max @100KHz,50mV SEC shorted

Contextual Info: T1 / CEPT / ISDN PRI SMD Transformers Dual Configuration For T 1 /C E P T /IS D N PRI Telecom Applications 1500 V j ^ minimum Isolation - Selected units 2000 Small footprint / Surface M ount 50 mil style package Designed to m eet CCITT and FCC Requirements

T-531

Abstract: 31103 coupling T31103 T-31103 smd V32 T843
Contextual Info: Modem Coupling & Voiceband Transformers Low Distortion Schematic "A" 2 Low Profile /SMD Versions 8 PRI Most Parts Listed are Suitable for V.32 Applications Schematic "C" 1 SEC. 3 5 PRI 5 SEC. 4 8 Electrical Specifications at 25OC Parameter T-33000 T-843 Units

Contextual Info: ELECTRICAL CHARCTERISTICS: Turns Ratio: PIN16-14 : (PIN1-2-3) = 1 : 1.15CT ±5% Turns Ratio: (PIN6-7-8) : (PIN11-10-9) = 1 : 2CT ±5% PRI Inductance: L=1.20mH Min @ 100KHz ,50mV PRI DC Resistance: 0.70 Ohms Max @25ºC SEC DC Resistance: 1.40 Ohms Max @25ºC

Contextual Info: mil ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.5mH&1.5mH Min @100KHz,50mV Turns Ratio Pri:Sec±2% : 2CS:1.57/2&2CS: 1.57/2 @100KHz,50mV PRI DC Resistance: 0.70 Ohms &0.70 Ohms Max @25°C SEC DC Resistance: 1.00 Ohms&l.OO Ohms Max @25°C Interwinding Capacitance: 40pF&40pF Max

Contextual Info: mil ELECTRICAL CHARACTERISTICS: PRI Inductance: 1.5mH&1.5mH Min @100KHz,50mV Turns Ratio Pri:Sec ± 2% : 2GT: 1/1.26 &2CT: 1/1.26 @100KHz,50mV PRI DC Resistance: 0.70 0hms&0.70 Ohms Max @25°C SEC DC Resistance: 1.00 Ohs&l.OO Ohms Max @25°C Interwinding Capacitance: 40pF&40pF Max @100KHz,50mV

-250/a1273 y k transistor

Contextual Info: A u d io O, P C -O C o m p a c t A u d io IV ansform ers and In du ctors OCR ± 2 0 % Pri. Im p. 0 U nbal. ma D C /Pri. Sec. Im p . Q 1 1 Low input imp to grid 50, 200/250, 500/600 50K 2 2 Low input Imp to PP grids 50, 200/250, 500/600 50K CT 3 3 Low input imp, to grid

smd 402

Abstract: 6 PIN SMD CHIP g24 smd
Contextual Info: DigitalTelecom Conexant ADSL recommendations PRI Line Features • RoHS compatible versions available • Designed for Conexant chipsets • Good total harmonic distortion characteristics • Optimized for size and performance • Customization available

Contextual Info: T1/CEPT/ISDN-PRI TRANSFORMER Dual Surface Mount, 1500 Vrms, Small Package Matched to PMC-Sierra's PM4351 COMET transceiver Small surface mount package Contains both transmit and receive transformers Isolation voltage: 1500Vrms Electrical Specifications @ 25°C

T1137

Abstract: PM4351 T651
Contextual Info: T1/CEPT/ISDN-PRI TRANSFORMER Dual Surface Mount, 1500 Vrms, Small Package Matched to PMC-Sierra's PM4351 COMET transceiver Small surface mount package Contains both transmit and receive transformers Isolation voltage: 1500 Vrms Electrical Specifications @ 25°C