PRECONDITIONING MOSFET Search Results
PRECONDITIONING MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL7667MJA | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| ICL7667MJA/883B | Rochester Electronics LLC | ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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| AM9513ADIB | Rochester Electronics LLC | AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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| CA3130AT/B | Rochester Electronics LLC | CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| CA3130T | Rochester Electronics LLC | CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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PRECONDITIONING MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LTC1729 Series Li-Ion Battery Charger Termination Controllers FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 1729 series is a family of smart termination controllers for lithium-ion battery chargers. These ICs provide trickle charge preconditioning, temperature charge |
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ltc1729ltc1731ltc173210-pin+5 | |
SS24 VISHAY
Abstract: LT1512 CDRH125-220MC 9013 pnp ntc 0510 12V cell phone charger ntc 10k 10% D5 NTC 1K datasheet panasonic make ntc thermistor ltly
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Contextual Info: RELIABILITY REPORT DATE : 5/12/2011 QUALITY ENG : PART NUMBER : Dinh Pham MIC4223/4224/4225 : Dual 4A, 4.5V to 18V, 15nS Switch Time, Low-Side MOSFET Drivers with Enable. RELIABILITY RATINGS : ESD RATINGS LATCH UP RATINGS MOISTURE SENSITIVITY PACKAGE THERMAL |
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mic4223/4224/4225/-200majesd-228a22793mel+6 | |
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Contextual Info: FRE160D, FRE160R, FRE160H 41 A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 41 A, 100V, RDS on = 0.050S1 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
OCR Scan |
fre160dfre160rfre160h050s1+5 | |
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Contextual Info: y*Rg*s FRK260D, FRK260R, FRK260H 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 46A, 200V, RDS on = 0.070Q. TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
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frk260dfrk260rfrk260ho-204ae+4 | |
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Contextual Info: Semiconductor FRF9250D, FRF9250R, FRF9250H 14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 14A, -200V, RDS on = 0.315Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot |
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Contextual Info: tyvvys S FRM240D, FRM240R, FRM240H S e m ico n d ucto r y y 16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 16A, 200V, RDS on = 0.24S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • |
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Contextual Info: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 500V, RDS on = 0.400S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
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frk460dfrk460rfrk460h400s1+5 | |
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Contextual Info: RELIABILITY REPORT DATE : 3/26/2013 QUALITY ENG : PURPOSE: Dinh Pham New Product Qual, Dual 1.5A-Peak Low-Side MOSFET Driver PART NUMBER MIC4426/4427/4428 MOISTURE SENSITIVITY LEVEL ASSEMBLY LOCATION FAB LOCATION PROCESS NAME SOIC-8L & MSOP-8L : Level 1 UNISEM |
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mic4426/4427/4428jesd223a26112m03jesd22-a102+3 | |
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Contextual Info: yw us FRK9260D, FRK9260R, FRK9260H 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -200V, RDS on = 0.200Q TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
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frk9260dfrk9260rfrk9260h-200v+5 | |
9931Contextual Info: RELIABILITY REPORT RELEASE DATE 06/10/1996 CONTACT: PRODUCT DESCRITION: Micrel QA/REL MIC4416BM4 and MIC4417BM4 MOSFET Driver 408 435-3476 PRODUCT DETAILS QUAL VEHICLE : PACKAGE: MIC4416BM4 SOT-143 MIC4417BM4 MIC4417BM4 ASSEMBLY M/C D/C FAB LOT LOC PROCESS |
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mic4416bm4mic4417bm4ot-143mp180s+2 | |
250V 10A TF 106Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
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100v 23A P-Channel MOSFETContextual Info: Semiconductor FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot |
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Contextual Info: FRM9140D, FRM9140R, FRM9140H 11 A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11 A, -100V, RDS on = 0.300S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
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Contextual Info: yw us FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040£i TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
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Contextual Info: w vys S Semiconductor FRK264D, FRK264R, FRK264H y y 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 34A, 250V, RDS on = 0.120S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma |
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frk264dfrk264rfrk264h120s1+5 | |
ta17741
Abstract: 2E12 FRS9140D FRS9140H FRS9140R
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Contextual Info: FRM9130D, FRM9130R, FRM9130H 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 6A, -100V, RDS on = 0.550S1 TO-204AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si) |
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Contextual Info: FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.50S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
OCR Scan |
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Contextual Info: FRK9150D, FRK9150R, FRK9150H 26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -100V, RDS on = 0.125S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
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Contextual Info: yw us FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 19A, -200V, RDS on = 0.210£1 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(SI) |
OCR Scan |
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Contextual Info: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
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frk150dfrk150rfrk150h055s1+5 | |
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Contextual Info: FRF250D, FRF250R, FRF250H 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 200V, RDS on = 0.115S1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
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frf250dfrf250rfrf250h115s1+6 | |
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Contextual Info: y*Rg*s FRE260D, FRE260R, FRE260H 31 A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 31 A, 200V, RDS on = 0.080£i TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) |
OCR Scan |
fre260dfre260rfre260ho-258aa+4 | |