PPJA3430 Search Results
PPJA3430 Datasheets Context Search
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Contextual Info: PPJA3430 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V SOT-23 2A Current Unit: inch mm Features RDS(ON) , VGS@4.5V, ID@2.0A<150mΩ RDS(ON) , VGS@2.5V, ID@1.5A<215mΩ RDS(ON) , VGS@1.8V, ID@0.5A<400mΩ Advanced Trench Process Technology |
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ppja3430ot-232011/65/euiec61249+2 | |
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Contextual Info: PPJA3430 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V SOT-23 2A Current Unit: inch mm Features RDS(ON) , VGS@4.5V, ID@2.0A<150mΩ RDS(ON) , VGS@2.5V, ID@1.5A<215mΩ RDS(ON) , VGS@1.8V, ID@0.5A<400mΩ Advanced Trench Process Technology |
Original |
ppja3430ot-232011/65/euiec61249+2 | |
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Contextual Info: PPJA3430 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V SOT-23 2A Current Unit: inch mm Features RDS(ON) , VGS@4.5V, ID@2.0A<150mΩ RDS(ON) , VGS@2.5V, ID@1.5A<215mΩ RDS(ON) , VGS@1.8V, ID@0.5A<400mΩ Advanced Trench Process Technology |
Original |
ppja3430ot-232011/65/euiec61249+2 |