SOT263-5
Abstract: 075E05 MS-012AA SC13 SO24 SSOP16 SSOP24 4 PIN THROUGH HOLE TRANSISTORS SOT-263
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines PowerMOS transistors 1998 Apr 02 File under Discrete Semiconductors, SC13 Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant)
|
Original
|
OT54variant
O-92variant)
O-220AB)
OT96-1
OT137-1
OT186
O-220
OT186A
O-220)
OT223
SOT263-5
075E05
MS-012AA
SC13
SO24
SSOP16
SSOP24
4 PIN THROUGH HOLE TRANSISTORS
SOT-263
|
PDF
|
PowerMOS Transistors
Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)
|
Original
|
OT54variant
O-92variant)
O-220AB)
OT96-1
OT137-1
OT186
O-220
OT186A
O-220)
OT223
PowerMOS Transistors
075E05
MS-012AA
SO24
SSOP16
SSOP24
|
PDF
|
TO-92variant
Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)
|
OCR Scan
|
OT54variant
O-92variant)
O-220AB)
OT96-1
OT137-1
T0-220
OT186A
O-220)
OT223
OT226
TO-92variant
|
PDF
|
MOSFET IGBT THEORY AND APPLICATIONS
Abstract: tv deflection theory PHILIPS MOSFET igbt BUK7508-55 equivalent SOT404 mosfet cross reference "Power Semiconductor" Philips igbt philips PHILIPS MOSFET PowerMos transistors TO220 package
Contextual Info: DATA SHEET Introduction PowerMOS Transistors including TOPFETs and IGBTs 1996 Dec 12 Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Introduction therefore be identified easily as they have a 4 digit ‘type code’ after the BUK prefix.
|
Original
|
BUK7508-55
MOSFET IGBT THEORY AND APPLICATIONS
tv deflection theory
PHILIPS MOSFET igbt
BUK7508-55 equivalent
SOT404
mosfet cross reference
"Power Semiconductor" Philips
igbt philips
PHILIPS MOSFET
PowerMos transistors TO220 package
|
PDF
|
AN9409
Abstract: transistors 9409 477J mosfet SOA testing Harris Semiconductor to220 power transistor RFD3055 RFP70N06 DB233 transistors+9409
Contextual Info: Harris Semiconductor No. AN9409 Harris Power MOSFETs August 1994 SAFE OPERATING AREA TESTING WITHOUT A HEAT SINK Authors: Wally Williams and Stan Benczkowski Introduction package at a very predictable rate since constant power circuits are usually used in SOA testing. There is also heat flow
|
Original
|
AN9409
1-800-4-HARRIS
AN9409
transistors 9409
477J
mosfet SOA testing
Harris Semiconductor to220 power transistor
RFD3055
RFP70N06
DB233
transistors+9409
|
PDF
|
Infineon technology roadmap for mosfet
Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
Contextual Info: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial
|
Original
|
KMZ60
KMA210
KMA215
Infineon technology roadmap for mosfet
LFPAK88
Acbel schematic diagram switching power supply
BLDC TRW
schematic diagram inverter air conditioner
schematic diagram for split air conditioner
TRIAC 20A 600V
inverter schematic ims 1600
triac 4A, 600V, 5mA
triac 0,8A, 600V, 5mA
|
PDF
|
vbg marking code transistor
Abstract: 00E-12 philips Power MOSFET Selection Guide
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch DESCRIPTION BUK210-50Y QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL
|
Original
|
BUK210-50Y
29-May-02)
vbg marking code transistor
00E-12
philips Power MOSFET Selection Guide
|
PDF
|
mosfet SOA testing
Abstract: AN9409 RFP70N06 RFD3055 mosfet transistor checking and testing 407 transistor
Contextual Info: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated junction temperature. The circuits to maintain a fixed current
|
Original
|
|
PDF
|
TO247 package
Abstract: X2 mos PHB11N50E PHP11N50E PHW11N50E
Contextual Info: Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated FEATURES PHP11N50E, PHB11N50E, PHW11N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
|
Original
|
PHP11N50E,
PHB11N50E,
PHW11N50E
PHP11N50E
O220AB)
TO247 package
X2 mos
PHB11N50E
PHW11N50E
|
PDF
|
PHB9N60E
Abstract: PHP9N60E PHW9N60E
Contextual Info: Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated FEATURES PHP9N60E, PHB9N60E, PHW9N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
|
Original
|
PHP9N60E,
PHB9N60E,
PHW9N60E
PHP9N60E
O220AB)
PHW9N60Eion
PHB9N60E
PHW9N60E
|
PDF
|
mosfet SOA testing
Abstract: AN-7516 RFD3055 RFP70N06 TO-251 fairchild
Contextual Info: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Title N75 ubct AFE PERTING REA ESTG ITHUT EAT NK) utho ) eyords reor ) OC FO fark ageode seute OCEW fark Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated
|
Original
|
|
PDF
|
PowerMos transistors TO220 package
Abstract: PHB13N40E PHP13N40E PHW13N40E to247 pcb footprint
Contextual Info: Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated FEATURES PHP13N40E, PHB13N40E, PHW13N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
|
Original
|
PHP13N40E,
PHB13N40E,
PHW13N40E
PHP13N40E
O220AB)
PowerMos transistors TO220 package
PHB13N40E
PHW13N40E
to247 pcb footprint
|
PDF
|
mosfet SOA testing
Abstract: AN-7516 RFD3055 RFP70N06 TO-251 fairchild
Contextual Info: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Title N94 bt AFE ERING REA STG THUT AT NK utho eyrds er ) OCI O frk geode setes OCEW frk Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated
|
Original
|
|
PDF
|
PHP6N60
Abstract: BUK457-400B PHB10N40E PHP10N40 PHP10N40E PHW10N40E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP10N40E, PHB10N40E, PHW10N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
|
Original
|
PHP10N40E,
PHB10N40E,
PHW10N40E
PHP10N40E
O220AB)
PHW10N4n
PHP6N60
BUK457-400B
PHB10N40E
PHP10N40
PHW10N40E
|
PDF
|
|
|
PHB4N60E
Abstract: PHP3N60 PHP4N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP4N60E, PHB4N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
|
Original
|
PHP4N60E,
PHB4N60E
PHP4N60E
O220AB)
PHB4N60E
PHP3N60
|
PDF
|
PHP6N50E
Abstract: PHB6N50E PHP3N60 PHP4N50 USON-10
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N50E, PHB6N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
|
Original
|
PHP6N50E,
PHB6N50E
PHP6N50E
O220AB)
PHB6N50E
PHP3N60
PHP4N50
USON-10
|
PDF
|
PHB6N60E
Abstract: PHP3N60 PHP6N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N60E, PHB6N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
|
Original
|
PHP6N60E,
PHB6N60E
PHP6N60E
O220AB)
PHB6N60E
PHP3N60
|
PDF
|
PHB3N40E
Abstract: PHD3N40E PHP2N40 PHP3N40E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP3N40E, PHB3N40E, PHD3N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
|
Original
|
PHP3N40E,
PHB3N40E,
PHD3N40E
PHP3N40E
O220AB)
PHB3N40E
PHD3N40E
PHP2N40
|
PDF
|
PHB3N40E
Abstract: PHD3N40E PHP2N40 PHP3N40E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP3N40E, PHB3N40E, PHD3N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
|
Original
|
PHP3N40E,
PHB3N40E,
PHD3N40E
PHP3N40E
O220AB)
PHB3N40E
PHD3N40E
PHP2N40
|
PDF
|
PHB6N60E
Abstract: PHP3N60 PHP6N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N60E, PHB6N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
|
Original
|
PHP6N60E,
PHB6N60E
PHP6N60E
O220AB)
PHB6N60E
PHP3N60
|
PDF
|
PHB3N60E
Abstract: PHP2N60 PHP3N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP3N60E, PHB3N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
|
Original
|
PHP3N60E,
PHB3N60E
PHP3N60E
O220AB)
PHB3N60E
PHP2N60
|
PDF
|
PHP8N50E
Abstract: BUK457-500B PHB8N50E PHP6N60 PHP8N50 PHW8N50E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP8N50E, PHB8N50E, PHW8N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
|
Original
|
PHP8N50E,
PHB8N50E,
PHW8N50E
PHP8N50E
O220AB)
PHW8N50E
BUK457-500B
PHB8N50E
PHP6N60
PHP8N50
|
PDF
|
BUK457-600B
Abstract: PHB7N60E PHP6N60 PHP7N60E PHW7N60E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP7N60E, PHB7N60E, PHW7N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
|
Original
|
PHP7N60E,
PHB7N60E,
PHW7N60E
PHP7N60E
O220AB)
PHW7N60E
BUK457-600B
PHB7N60E
PHP6N60
|
PDF
|
PHB3N50E
Abstract: PHP2N60 PHP3N50 PHP3N50E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP3N50E, PHB3N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
|
Original
|
PHP3N50E,
PHB3N50E
PHP3N50E
O220AB)
PHB3N50E
PHP2N60
PHP3N50
|
PDF
|
