POWEREDGE Search Results
POWEREDGE Price and Stock
Molex 0457191000Standard Card Edge Connectors 12.9mm Pit. EXTreme PwrEdge Conn., 1 Segment, 4.5mm Tail Lg., TH, Mates to 1.57mm Thick Card Edge or Bus Bar Tab |
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0457191000 | Tray | 690 | 115 |
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Molex 0457190007Standard Card Edge Connectors 12.9mm Pit. EXTreme PwrEdge Conn., 2 Segments, 2.92mm Tail Lg., TH, Mates to 1.57mm Thick Card Edge or Bus Bar Tab |
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0457190007 | Tray | 935 |
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Molex 0458440004Standard Card Edge Connectors 2.5mm Pit. EXTreme PwrEdge Sig Conn., Double Sided, 2 Segments Thick PC Board |
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0458440004 | Tray | 935 |
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Molex 0458440006Standard Card Edge Connectors 2.5mm Pit. EXTreme PwrEdge Sig Conn., Double Sided, 4 Segments Thick PC Board |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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0458440006 | Tray | 510 |
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Molex 2194760000Standard Card Edge Connectors EXTreme PwrEdge Plus Conn., 7.62mm Pwr / 2.54mm Sig Pit., R/A, TH, 4.25mm PCB Offset Ht. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2194760000 | Reel | 500 |
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POWEREDGE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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1C31EG
Abstract: 617 300
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nss1c301et4gnss1c301e/d1c31eg617 300 | |
NSS1C300ET4G
Abstract: NSS1C300E
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nss1c300et4gnss1c300e/dnss1c300e | |
sot-23 npn marking code VD
Abstract: NSV20201LT1G
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nss20201lt1gnsv20201lt1gnss20201l/dsot-23 npn marking code vd | |
2110 - 2170mhz power moduleContextual Info: RMPA2059 WCDMA PowerEdge Power Amplifier Module Features General Description • 40% CDMA efficiency at +27dBm average output power • Single positive-supply operation and low power and shutdown modes • Meets UTMS/WCDMA and HSDPA performance requirements |
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rmpa205927dbm2110 - 2170mhz power module | |
MARKING VT
Abstract: NSS1C201LT1G marking code 10 sot23
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nss1c201lt1gnss1c201l/dmarking vtmarking code 10 sot23 | |
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Contextual Info: NSS1C200L, NSV1C200L 100 V, 2.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These |
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nss1c200lnsv1c200lnss1c200l/d | |
marking codes transistors sot-223 OB SEMICONDUCTOR
Abstract: NSS1C201
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nss1c201mz4nss1c201mz4/dmarking codes transistors sot-223 ob semiconductornss1c201 | |
NSS30201MR6T1GContextual Info: NSS30201MR6T1G 30 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss30201mr6t1gnss30201mr6/d | |
NSS20500UW3T2GContextual Info: NSS20500UW3T2G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss20500uw3t2gnss20500uw3/d | |
NSS40500UW3T2GContextual Info: NSS40500UW3T2G 40 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss40500uw3t2gnss40500uw3/d | |
NSS20600CF8T1GContextual Info: NSS20600CF8T1G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss20600cf8t1gnss20600cf8/d | |
VS6 SOT23
Abstract: NSS30101LT1G HIGH SPEED SWITCHING NPN SOT23
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nss30101lt1gnss30101l/dvs6 sot23high speed switching npn sot23 | |
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Contextual Info: NSS20600CF8T1G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss20600cf8t1gnss20600cf8/d | |
NSS30070MR6Contextual Info: NSS30070MR6T1G 30 V, 0.7 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss30070mr6t1gnss30070mr6/dnss30070mr6 | |
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Contextual Info: NSS30100LT1G 30 V, 2 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss30100lt1gnss30100l/d | |
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Contextual Info: NSS12600CF8T1G 12 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss12600cf8t1gnss12600cf8/d | |
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Contextual Info: NSS20500UW3T2G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss20500uw3t2gnss20500uw3/d | |
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Contextual Info: NSS12200WT1G 12 V, 3 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss12200wt1gnss12200w/d | |
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Contextual Info: NSS40500UW3T2G 40 V, 5.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss40500uw3t2gnss40500uw3/d | |
NSS30101LT1GContextual Info: NSS30101LT1G 30 V, 2 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss30101lt1gnss30101l/d | |
NSS20200LT1GContextual Info: NSS20200LT1G 20 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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nss20200lt1gnss20200l/d | |
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Contextual Info: NSS40301MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed |
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nss40301mz4nss40301mz4/d | |
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Contextual Info: NSS60600MZ4 60 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where |
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nss60600mz4nss60600mz4/d | |
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Contextual Info: NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed |
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nss40300mz4nss40300mz4/d | |