POWER WINDOW Search Results

C2665

Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
Contextual Info: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)

Contextual Info: CY7C261 CY7C263/CY7C264 CYPRESS SEMICONDUCTOR • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 mW (military) • Super low standby power (7C261)

AT25080N-10SA-2.7C

Contextual Info: CY7C261 CY7C263/CY7C264 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (m ilitai?) • Low power — 660 mW (commercial) — 770 mW (military) • Super low standby power (7C261)

Contextual Info: CY7C266 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 mW (military) • Super low standby power — Less than 85 mW when deselected

3VF7

Abstract: va11C 27C64 CY7C266
Contextual Info: CYPRESS SEMI CONDUCTOR 4bE D B ESa'ibbS QGGbflOl "PMtriVT CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • H ighspeed — 2 0 ns commercial) — 25 ns (military) • Low power — 660 mW (commercial)

MIE-304A2

Abstract: opto 921 high power infrared led
Contextual Info: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A2 Package Dimensions The MIE-304A2 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.

high power infrared led

Abstract: MIE-304A4 Unity Opto Technology
Contextual Info: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A4 Package Dimensions The MIE-304A4 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.

Contextual Info: CY7C291A CY7C292A/CY7C293A 'W CYPRESS = SEMICONDUCTOR Reprogrammable 2K x 8 PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 2 0 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)

"CHAPTER 1 Introduction to Power Semiconductors"

Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
Contextual Info: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General

IRF7103Q

Contextual Info: PD - 93944C IRF7103Q AUTOMOTIVE MOSFET Typical Applications ● ● ● HEXFET Power MOSFET Anti-lock Braking Systems ABS Electronic Fuel Injection Power Doors, Windows & Seats VDSS Benefits ● ● ● ● ● ● Ω) RDS(on) max (mΩ) ID 130@VGS = 10V

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

high power infrared led

Abstract: MIE-324A2
Contextual Info: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-324A2 Package Dimensions The MIE-324A2 is a high power infrared eimtting Unit : mm inches diode in GaAs technology with AlGaAs window φ 3.55±0.25 (.140±.010) coating molded in water clear plastic package.

OMRON ANTI-PINCH POWER WINDOW

Abstract: vehicle rain sensor power window anti-pinch omron power window SWITCH power window control 118-COMPLIANT OMRON power window power window motor
Contextual Info: OMRON AUTOMOTIVE ELECTRONICS ANNOUNCES NEW FMVSS 118COMPLIANT ANTI-PINCH POWER WINDOW SWITCH/CONTROL SYSTEM Farmington Hills, Mich., Jan. 25, 2000 Omron Automotive Electronics, a global supplier of advanced electronic components, announces its new Anti-Pinch Power Window Switch/Control System to meet the Federal Motor Vehicle

R4640

Abstract: R4650 R4700 PQ208-2 RV4700
Contextual Info: IDT79R4700TM IDT79RV4700TM 64-BIT RISC MICROPROCESSOR Integrated Device Technology, Inc. • Low-power operation - 3.3V power supply - Dynamic power management - Standby mode reduces internal power • Fully software and pin-compatible with 40XX Processor

Contextual Info: Revision 12 ProASIC3L Low Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • Dramatic Reduction in Dynamic and Static Power Savings • 1.2 V to 1.5 V Core and I/O Voltage Support for Low Power • Low Power Consumption in Flash*Freeze Mode Allows for

tanaka TS3332LD epoxy

Abstract: XP1073-BD P1073-BD ka-band bare
Contextual Info: 33-37 GHz GaAs MMIC Power Amplifier P1073-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 6.5 W Power Amplifier 22 dB Small Signal Gain 37 - 38 dBm Pulsed Saturated Output Power Up to 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

LC 7258

Contextual Info: CYPRESS • CMOS for optimum speed/power • High speed — tAA = 25 ns max. com m ercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected Byte-wide mem ory organization 100% reprogram m able in the windowed package

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

SLD302V

Abstract: SLD302V-1 SLD302V-2 SLD302V-21 SLD302V-24 SLD302V-25 SLD302V-3
Contextual Info: SLD302V 200mW High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Pin Configuration

PIC18F97J94

Abstract: PIC18F65J94 PIC18F87J94 jedec Package TO-39 PIC18F66J CHHN 035 Full-bridge series resonant converter sck1r0 PIC18F67J94 lcd panel schema
Contextual Info: PIC18F97J94 FAMILY 8-Bit LCD Flash Microcontroller with USB and XLP Technology Extreme Low-Power Features: Peripheral Features continued : • Multiple Power Management Options for Extreme Power Reduction: - VBAT allows for lowest power consumption on back-up battery (with or without RTCC)

M48Z58

Abstract: M48Z58Y SOH28
Contextual Info: M48Z58 M48Z58Y 64 Kbit 8Kb x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES (VPFD = Power-fail Deselect Voltage):

SLD344YT

Abstract: SLD344YT-1 SLD344YT-2 SLD344YT-21 SLD344YT-24 SLD344YT-3
Contextual Info: SLD344YT 6W High Power Laser Diode Description The SLD344YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. Features • High-optical power output Recommended optical power output: PO = 6.0W

2 Wavelength Laser Diode

Abstract: Photo DIODE (any type) datasheet 10w laser diode 6 pin laser diode high power infrared laser diode laser diode lifetime note application laser diode SLD344YT SLD344YT-1 SLD344YT-2
Contextual Info: SLD344YT Preliminary 6W High Power Laser Diode Description The SLD344YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. Features • High-optical power output Recommended optical power output: PO = 6.0W

20DBL0629

Abstract: DM6030HK TS3332LD XX1001-BD XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 X1001-BD 395 2XF
Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing