POWER TRANSISTOR IC 4A NPN TO - 251 Search Results

power transistor Ic 4A NPN to - 251

Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13
Contextual Info: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 4A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability

marking c08

Abstract: C08 marking 250V transistor npn 2a BM 0228 marking code C5 power transistor Ic 4A NPN to - 251 1A MARKING CODE C5 MARKING TRANSISTOR marking code B2 NPN Silicon Power Transistor DPAK
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

TSC5304D

Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

TSC5304ED

Abstract: power transistor Ic 4A NPN to - 251 TSC5304EDCP transistor c10 TO-252 marking C10 marking C10
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC 4A VCE(SAT) Features ● 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

5210 diode

Abstract: NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 2.5A / 0.5A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

MJE3055

Abstract: MJE3055T MJE3055T-TA3-T MJE3055T-TM3-T MJE3055T-TN3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 1 TO- 251 The UTC MJE3055T is designed for general purpose of amplifier and switching applications. 1 TO-252 1 TO-220 *Pb-free plating product number:MJE3055TL

transistor MJE3055

Abstract: MJE3055
Contextual Info: MJD3055 NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features 1 2 3 Designed for general purpose amplifier and low speed switching applications . Electrically simiar to MJE3055. TO-252-2L DC current gain specified to10 Amperes MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: MJD122 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

npn ie 4a

Abstract: TIP127 NPN Transistor 8A
Contextual Info: MJD127 NPN TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Darlington Transistor TO251

Abstract: to-252-2
Contextual Info: MJD112 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Complementary darlington power transistors dpak for surface mount applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value

200V transistor npn 2a

Abstract: T2096 T2096L-TM3-T T2096-TM3-T TO-251 Package QW-R21
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD T2096 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications. „ FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD T2096 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications.  FEATURES

Contextual Info: UNISONICTECHNOLOGIESCO., LTD T2096 NPN SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors MJD3055 TRANSISTOR NPN TO-251 FEATURES z Designed for General Purpose Amplifier and Low Speed Switching Applications 1.BASE 2.COLLECTOR z Electrically Simiar to MJE3055

TRANSISTOR tip122

Abstract: MJD122 TIP122 TO252-2
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2 TRANSISTOR NPN FEATURES 1. BASE • · · High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD127 TRANSISTOR NPN FEATURES • · · 1. BASE High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C 2. COLLECTOR

MJE3055

Abstract: transistor MJE3055 500KHZ MJD3055
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252 Plastic-Encapsulate Transistors MJD3055 TRANSISTOR NPN TO-251 TO-252-2L FEATURES z Designed for general purpose amplifier and low speed switching applications . 123 1.BASE z Electrically simiar to MJE3055.

power transistor Ic 4A NPN to - 251

Abstract: MID122
Contextual Info: DC COMPONENTS CO., LTD. R MID122 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-251 Pinning .268 6.80 .252(6.40) 1 = Base 2 = Collector

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 MJD112 TRANSISTOR NPN 1. BASE FEATURES y Complementary Darlington Power Transistors Dpak for Surface Mount Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Darlington Transistor TO251

Abstract: MJD112
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD112 TRANSISTOR NPN 1. BASE FEATURES y Complementary darlington power transistors dpak for surface mount applications 2. COLLECTOR 3. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD122 TRANSISTOR（NPN） TO-251-3L FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR

HI122

Contextual Info: HI-SINCERITY Spec. No. : HI200102 Issued Date : 1998.07.01 Revised Date : 2003.04.14 Page No. : 1/2 MICROELECTRONICS CORP. HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications.

2STD1665

Abstract: 2STD1665-1 2STD1665T4 D1665 JESD97 power transistor Ic 4A NPN to - 251
Contextual Info: 2STD1665 Low voltage fast-switching NPN power transistor General features • Very low collector to emitter saturation volatage ■ High current gain characteristic fast-switching speed ■ Through-hole IPAK TO-251 power package in tube (suffix”-1”)