POWER TRANSISTOR IC 4A NPN SMD Search Results

power transistor Ic 4A NPN smd

Abstract: transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.

Contextual Info: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

NPN transistor 9418

Abstract: 9418 transistor
Contextual Info: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD / BDS17SMD • High Voltage • Hermetic SMD1 TO-276AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

IC 9550

Abstract: TO276AA
Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD05 / BDS17SMD05 • High Voltage • Hermetic SMD05 TO-276AA Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD05 / BDS17SMD05 • High Voltage • Hermetic SMD05 TO-276AA Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16SMD / BDS17SMD • High Voltage • Hermetic SMD1 TO-276AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

transistor 2sc5353

Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Contextual Info: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000

CHINA TV FBT

Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Contextual Info: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV

power transistor Ic 4A datasheet NPN smd

Abstract: FZT1049A 5a SMD Transistor
Contextual Info: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1049A SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 VCEO = 30V. 5 Amp continuous current. +0.1 3.00-0.1 20 Amp pulse current. +0.15 1.65-0.15 Features +0.2 0.90-0.2

npn smd 3a

Abstract: power transistor Ic 4A datasheet NPN smd FZT1048A 5a SMD Transistor
Contextual Info: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1048A SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 VCEO = 17.5V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3

power transistor Ic 4A datasheet NPN smd

Abstract: FZT688B
Contextual Info: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT688B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Extremely low equivalent on resistance; RCE sat 83mÙ at 3A. +0.1 3.00-0.1 Gain of 400 at IC=3 Amps and very low saturation voltage.

FZT1047A

Contextual Info: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1047A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 VCEO = 10V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3

transistor SMD n 03a

Abstract: 2SC4598 SMD TRANSISTOR 12a
Contextual Info: Transistors SMD Type NPN Triple Diffused Planar Silicon Transistor 2SC4598 TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Surface mount type device making the following possible. Reduction in the number of manufacturing processes +0.1 1.27-0.1 +0.2 4.57-0.2 Small size of 2SC4598-applied equipment.

2SC4600

Abstract: SMD npn TRANSISTOR 1a 200v
Contextual Info: Transistors SMD Type NPN Triple Diffused Planar Silicon Transistor 2SC4600 TO-263 1 .2 7 -0+ 0.1.1 Features Unit: mm Surface mount type device making the following possible. +0.1 1.27-0.1 +0.2 4.57-0.2 Reduction in the number of manufacturing processes Small size of 2SC4600-applied equipment.

philips power transistor bd139

Abstract: bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd
Contextual Info: AN10405 Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat BISS transistors Rev. 01.00 — 06 January 2006 Application note Document information Info Content Keywords Bipolar transistors, BISS, low VCEsat, PBSS, power transistors

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

2N3741

Abstract: 2N3741SMD 2N3766SMD
Contextual Info: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1

Contextual Info: SEME 2N3741 SMD LAB MECHANICAL DATA Dimensions in mm MEDIUM POWER PNP SILICON POWER TRANSISTOR 3 .6 0 0 .1 4 2 M a x . • LOW SATURATION VOLTAGE • HIGH GAIN 3 FEATURES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1

Contextual Info: 2N6299SMD 2N6301SMD COMPLEMENTARY SILICON POWER TRANSISTORS MECHANICAL DATA Dimensions in mm inches 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 2 9 .6 9 .3 1 1 .5 1 1 .2 2N6301SMD - NPN TRANSISTOR 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4

2N6299SMD

Abstract: 2N6299SMD05 2N6301SMD 2N6301SMD05 SMD05 75W PNP TO276AA
Contextual Info: 2N6299SMD 2N6301SMD 2N6299SMD05 2N6301SMD05 MECHANICAL DATA Dimensions in mm inches 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) COMPLEMENTARY SILICON POWER TRANSISTORS 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 )

Contextual Info: 2N6299SMD 2N6301SMD 2N6299SMD05 2N6301SMD05 MECHANICAL DATA Dimensions in mm inches 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) COMPLEMENTARY SILICON POWER TRANSISTORS 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 )