POWER TRANSISTOR ARRAY Search Results

IC-3479

Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits

PA1476

Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed

ic 8705

Abstract: IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed

pa1437

Abstract: IC-3516 pnp DARLINGTON TRANSISTOR ARRAY IEI-1209 pnp darlington array IEI-1213 MEI-1202 MF-1134 PA1437H power transistor array
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1437 PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1437 is PNP silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed

IC-3523

Abstract: IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1458 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and

uPA1456H

Abstract: IC-3521 PA1456 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1456 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed

IC-6634

Abstract: PA1478 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1478 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and

iei-1209

Abstract: uPA1438 transistor CD 910 IC351 IC-3517 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY uPA1438 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The ¿¿PA1438 is NPN silicon epitaxial D arlington (in millimeters) Power Transistor A rray that built in Surge Absorber and

transistor CD 910

Abstract: IEI-1213 MEI-1202 MF-1134 uPA1426 darlington transistor for audio power application npn darlington array EL120 EM202
Contextual Info: SILICON TRANSISTOR ARRAY / P 1 A 4 2 6 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION The,uPA1426 is NPN silicon epitaxial Darlington Power Transistor PACKAGE DIMENSION (in m illim eters) A rray that built in 4 circu its designed for driving solenoid,

IC-6339

Abstract: PA1453 IEI-1213 MEI-1202 MF-1134 ic 926
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1453 PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1453 is PNP silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,

IC-3520

Abstract: uPA1454H PA1454 IEI-1213 MEI-1202 MF-1134 iei-1209
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1454 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1454 is NPN silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,

PA1434H

Abstract: iei-1209 pa1434 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1434 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1434 is NPN silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,

iei-1209

Abstract: PA1428 IC-6633 IEI-1213 MEI-1202 MF-1134 NEC RELAY DARLINGTON TRANSISTOR ARRAY
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY /¿PA1428 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION The/xPA1428 is NPN silicon epitaxial D arlington Power T ransistor A rray th at b u ilt in Surge Absorber 4 circuits

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

c3346

Abstract: c3346 transistor nf transistor array MC3356P
Contextual Info: M M O T O R O L A - M C3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for

Contextual Info: Order this document by MC3346/D MC3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.

LM389

Abstract: LM389N LM386 "transistors Vceo" "low voltage audio power amplifier"
Contextual Info: LM389 LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array Literature Number: SNOSBT9A LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array Low quiescent current drain Voltage gains from 20 to 200 Y Ground referenced input Y Self-centering output quiescent voltage

MP4301

Contextual Info: MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Four Darlington Power Transistor in One MP4301 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 12 pin)

MP4003

Abstract: WF VQE 11 E MP4009
Contextual Info: TO SH IBA MP4009 TOSHIBA POWER TRANSISTOR MODULE SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 MP4009 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE. INDUCTIVE LOAD SWITCHING. 25.210.2

Contextual Info: MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Darlington power transistor 4 in 1 MP4301 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin) ·

mp4301

Abstract: mp43
Contextual Info: MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Darlington power transistor 4 in 1 MP4301 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin) •

MP4025

Contextual Info: MP4025 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type darlington power transistor 4 in 1 MP4025 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Small package by full molding (SIP 10 pin) •

MP4020

Contextual Info: MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Darlington power transistor 4 in 1 MP4020 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 10 pin)

nand gate layout

Abstract: darlington buffer array B2000 High speed output buffer IC 5V 502-016
Contextual Info: MB 17K Low Power Schottky TTL c c_ The Fujitsu B-2000 IV1B17K series is an integrated circuit gate array fabricated with a low power Schottky T T L (Transistor-Transistor Logic) process. The array consists of 2108 internal 3-input NAND gates and 112 input/output buffers.