POWER N FET Search Results

TBX 0.800

Abstract: LTC2925 LTC2925CGN LTC2925CUF LTC2925IGN LTC2925IUF Si4412ADY LTC25
Contextual Info: LTC2925 Multiple Power Supply Tracking Controller with Power Good Timeout DESCRIPTION FEATURES n n n n n n n n n n n Flexible Power Supply Tracking Up and Down Power Supply Sequencing Supply Stability Is Not Affected Controls Three Supplies Without Series FETs

T3D zener panasonic DIODE

Abstract: T3D zener DIODE T3D 63 ZENER DIODE diode t3d panasonic diode zener t3d panasonic Wakefield Engineering LTN20069 diode zener t3d 21 ZENER DIODE T3D T3D 97 ZENER DIODE zener t2d
Contextual Info: LTM4605 High Efficiency Buck-Boost DC/DC µModule Regulator DESCRIPTION FEATURES n n n n n n n n n n n n The LTM 4605 is a high efficiency switching mode buckboost power supply. Included in the package are the switching controller, power FETs, and support components.

Contextual Info: LTM4609 36VIN, 34VOUT High Efficiency Buck-Boost DC/DC µModule Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n The LTM 4609 is a high eficiency switching mode buckboost power supply. Included in the package are the switching controller, power FETs and support components.

T3D 97 ZENER DIODE

Abstract: diode zener t3d panasonic T3D zener panasonic DIODE T3D zener DIODE T3D 63 ZENER DIODE ZENER DIODE t2d 79 ZENER DIODE T3D 97 diode zener t3d 23 LTM4607V ZENER DIODE t2d 93
Contextual Info: LTM4607 36VIN, 24VOUT High Efficiency Buck-Boost DC/DC µModule Regulator DESCRIPTION FEATURES n n n n n n n n n n n n The LTM 4607 is a high efficiency switching mode buckboost power supply. Included in the package are the switching controller, power FETs, and support components.

TPM2626-60

Contextual Info: MICROWAVE POWER GaAs FET TPM2626-60 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n High Power P1dB=48.0dBm TYP. at 2.6GHz n n Partially Matched Type n Hermetically Sealed Package High Power Gain G1dB=10dB(TYP.) at 2.6GHz RF PERFORMANCE SPECIFICATIONS (Ta=25 o C)

TL064

Abstract: TL064A TL064B TL064IN TL064M tl0641
Contextual Info: TL064 TL064A - TL064B LOW POWER QUAD J-FET OPERATIONAL AMPLIFIERS n n n n n n n n n VERY LOW POWER CONSUMPTION WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS TYPICAL SUPPLY CURRENT : 200µA OUTPUT SHORT-CIRCUIT PROTECTION

tl0621

Abstract: TL062 TL062A TL062B TL062C TL062I TL062IN TL062M
Contextual Info: TL062 TL062A - TL062B LOW POWER DUAL J-FET OPERATIONAL AMPLIFIERS n n n n n n n n n VERY LOW POWER CONSUMPTION : WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS TYPICAL SUPPLY CURRENT : 200µA OUTPUT SHORT-CIRCUIT PROTECTION

schematic TL064

Abstract: TL064 TL064A TL064B TL064IN TL064M PM-DIP14 PM-SO14 tl0641
Contextual Info: TL064 TL064A - TL064B LOW POWER QUAD J-FET OPERATIONAL AMPLIFIERS n n n n n n n n n VERY LOW POWER CONSUMPTION WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS TYPICAL SUPPLY CURRENT : 200µA OUTPUT SHORT-CIRCUIT PROTECTION

Contextual Info: PD- 93809A IRF7353D2 FETKYä MOSFET / Schottky Diode n n n n n n Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1

Contextual Info: LTM4611 Ultralow VIN, 15A DC/DC µModule Regulator FEATURES n n n n n n n n n n n n n n n DESCRIPTION The LTM 4611 is a high density 15A output, switch mode DC/DC buck converter power supply capable of operating from very low voltage input supplies. Included in the package are the buck switching controller, power FETs, inductor and loop-compensation components. The LTM4611

pa1520

Contextual Info: DATA SHEET Compound Field Effect Power Transistor UPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE D E S C R IP T IO N PACKAG E The /¿PA1520B is N-channel Power MOS FET A rray that built in 4 circuits designed for solenoid, motor and lamp D IM E N S IO N S

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.5dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION

Contextual Info: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION

TIM1414-9L

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION

TIM1414-30L

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.5dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION

LTC4088

Contextual Info: LTC4088-1/LTC4088-2 High Efficiency Battery Charger/USB Power Manager with Regulated Output Voltage DESCRIPTION FEATURES n n n n n n n n n n Switching Regulator Makes Optimal Use of Limited Power Available from USB Port to Charge Battery and Power Application

TIM1414-18L-252

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-18L-252 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=42.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION

CI008

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTORS UPA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N S This pro d u ct is N-Channe> M OS Field Effect in: millimeter T ransistordesignedforD C /D C converters and power

LTC4088

Contextual Info: LTC4088 High Efficiency Battery Charger/USB Power Manager DESCRIPTION FEATURES n n n n n n n n n Switching Regulator Makes Optimal Use of Limited Power Available from USB Port to Charge Battery and Power Application 180mΩ Internal Ideal Diode Plus Optional External

TIM1314-30L

Contextual Info: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz

7-AA03A

Contextual Info: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz

Contextual Info: MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz

TIM1414-10LA-252

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-10LA-252 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=5.5dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE