POWER N FET Search Results

T3D zener panasonic DIODE

Abstract: T3D zener DIODE T3D 63 ZENER DIODE diode t3d panasonic diode zener t3d panasonic Wakefield Engineering LTN20069 diode zener t3d 21 ZENER DIODE T3D T3D 97 ZENER DIODE zener t2d
Contextual Info: LTM4605 High Efficiency Buck-Boost DC/DC µModule Regulator DESCRIPTION FEATURES n n n n n n n n n n n n The LTM 4605 is a high efficiency switching mode buckboost power supply. Included in the package are the switching controller, power FETs, and support components.

Contextual Info: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION

Contextual Info: MICROWAVE POWER GaAs FET TIM8596-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 8.5GHz to 9.6GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM3742-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=36.5dBm at 3.7GHz to 4.2GHz n HIGH GAIN G1dB=12.0dB at 3.7GHz to 4.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-2L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=33.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 12.7GHz to 13.2GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM1415-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=33.5dBm at 14.5GHz to 15.0GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.5GHz to 15.0GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=39.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-2L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=36.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TIM6472-8UL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

2SK399

Abstract: 2SJ113 J-10
Contextual Info: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.

TIM1213

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm n HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿¿PA1702 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect in: millimeter Transistor designed for DC/DC converters and power

Contextual Info: DATA SHEET SHEET DATA MOS FIELD EFFECT POWER TRANSISTORS µPA1703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transis- in millimeter tor designed for power management applications of

C10535E

Abstract: C10943X C11531E MEI-1202 PA1703 TEA-1035
Contextual Info: DATA SHEET SHEET DATA MOS FIELD EFFECT POWER TRANSISTORS µPA1703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Transis- in millimeter tor designed for power management applications of

pa1520

Abstract: PA1520BH IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET Compound Field Effect Power Transistor µPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The µPA1520B is N-channel Power MOS FET Array that PACKAGE DIMENSIONS built in 4 circuits designed for solenoid, motor and lamp in millimeters

PA1572

Abstract: C10535E C10943X MEI-1202 PT2320 PA1572BH
Contextual Info: DATA SHEET Compound Field Effect Power Transistor µPA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and

Contextual Info: MICROWAVE POWER GaAs FET TIM1414-7 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=38.5 dBm at 14.0 GHz to 14.5 GHz n HIGH GAIN G1dB=6.5 dB at 14.0 GHz to 14.5 GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TIM3438-16SL

Contextual Info: MICROWAVE POWER GaAs FET TIM3438-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level n HIGH POWER P1dB=42.5dBm at 3.4GHz to 3.8GHz n HIGH GAIN G1dB=12.5dB at 3.4GHz to 3.8GHz