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    POWER MOSFET QGD FOM Search Results

    POWER MOSFET QGD FOM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1D120603MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN PDF
    MGN1D050603MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 5-6/-3V GAN PDF
    MGN1S0512MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN PDF
    MGN1S1212MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN PDF
    MGN1S1208MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN PDF

    POWER MOSFET QGD FOM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    751AD

    Abstract: NTLMS4507N NTLMS4507NR2 4744 mosfet
    Contextual Info: NTLMS4507N Power MOSFET 30 V, 24 A, N−Channel, SO−8 Leadless Package Features and Benefits • • • • • Fast Switching Performance Low tRR and QRR Optimized for Synchronous Operation Low RDS on to Minimize Conduction Loss Optimized FOM (QGD x RDS(on)


    Original     		NTLMS4507N NTLMS4507N/D 751AD NTLMS4507N NTLMS4507NR2 4744 mosfet PDF

    NTLMS4501N

    Abstract: NTLMS4501NR2
    Contextual Info: NTLMS4501N Power MOSFET 30 V, 14.7 A, N−Channel, SO−8 Leadless Package Features and Benefits • • • • • Fast Switching Performance Low tRR and QRR Optimized for Synchronous Operation Low RDS on to Minimize Conduction Loss Optimized FOM (QGD x RDS(on)


    Original     		NTLMS4501N NTLMS4501N/D NTLMS4501N NTLMS4501NR2 PDF

    Contextual Info: NTLMS4502N Advance Information Power MOSFET 24 V, Single N-Channel SO-8 Leadless Package http://onsemi.com Features • • • • • Fast Switching Performance Low tRR and QRR Optimized for Synchronous Operation Low RDS on to Minimize Conduction Loss Optimized FOM (QGD x RDS(on)


    Original     		NTLMS4502N NTLMS4502N/D PDF

    irfp23n50

    Abstract: D25D
    Contextual Info: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration


    Original     		IRFP23N50L, SiHFP23N50L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfp23n50 D25D PDF

    IRFP23N50L

    Abstract: SiHFP23N50L 91209 irfp23n50
    Contextual Info: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration


    Original     		IRFP23N50L, SiHFP23N50L O-247 18-Jul-08 IRFP23N50L 91209 irfp23n50 PDF

    Contextual Info: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration


    Original     		IRFP23N50L, SiHFP23N50L 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    99AB

    Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration


    Original     		IRFP17N50L, SiHFP17N50L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 99AB PDF

    IRFP23N50L

    Abstract: SiHFP23N50L irfp23N50
    Contextual Info: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration


    Original     		IRFP23N50L, SiHFP23N50L O-247 18-Jul-08 IRFP23N50L irfp23N50 PDF

    irfp23n50

    Abstract: IRFP23N50LP
    Contextual Info: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration


    Original     		IRFP23N50L, SiHFP23N50L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfp23n50 IRFP23N50LP PDF

    Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration


    Original     		IRFP17N50L, SiHFP17N50L O-247 12-Mar-07 PDF

    Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration


    Original     		IRFP17N50L, SiHFP17N50L 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration


    Original     		IRFP17N50L, SiHFP17N50L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration


    Original     		IRFP23N50L, SiHFP23N50L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration


    Original     		IRFP23N50L, SiHFP23N50L 2002/95/EC O-247AC 11-Mar-11 PDF

    99AB

    Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration


    Original     		IRFP17N50L, SiHFP17N50L 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 99AB PDF

    Contextual Info: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration


    Original     		IRFP23N50L, SiHFP23N50L O-247 12-Mar-07 PDF

    IRFP17N50L

    Abstract: SiHFP17N50L
    Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration


    Original     		IRFP17N50L, SiHFP17N50L O-247 18-Jul-08 IRFP17N50L PDF

    Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration


    Original     		IRFP17N50L, SiHFP17N50L 2002/95/EC O-247AC 11-Mar-11 PDF

    Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHB24N65E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHG24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHG24N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    2088 DIODE

    Contextual Info: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHP24N65E 2002/95/EC 11-Mar-11 2088 DIODE PDF

    Contextual Info: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHP24N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHB24N65E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145


    Original     		SiHP24N65E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF