POWER MOSFET LOGIC LEVEL Search Results

AN7254

Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Contextual Info: HUF76105SK8 Data Sheet December 2001 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

TA7613

Abstract: AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Contextual Info: HUF76131SK8 Data Sheet December 2001 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

AN7254

Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Contextual Info: HUF76132SK8 Data Sheet December 2001 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

AN9321

Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Contextual Info: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

AN7260

Abstract: AN7254 RFW2N06RLE TB334 Logic Level N-Channel Power MOSFET
Contextual Info: RFW2N06RLE Data Sheet January 2002 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET Features • 2A, 60V The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching

Contextual Info: HUF76131SK8 Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

HP4936DY

Abstract: HP4936DYT TB334
Contextual Info: HP4936DY Data Sheet December 2001 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET Features • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: HP4936DY Semiconductor 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET May 1998 Features Description • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.

35E2

Abstract: AN9321 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Contextual Info: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4719.1 Features • Logic Level Gate Drive [ /Title This N-Channel power MOSFET is • 5.5A, 30V HUF76 manufactured using the innovative • Ultra Low On-Resistance, rDS(ON = 0.050Ω

MARKING 358

Contextual Info: FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate

SMN01L20

Contextual Info: SMN01L20Q Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • 0.85A, 200V, RDS on =1.35Ω @ VGS=10V  Low gate charge: Qg=4nC (Typ.)  Fast switching  100% avalanche tested  RoHS compliant device D G Ordering Information Part Number

Contextual Info: SENSITRON SEMICONDUCTOR SHD226314 TECHNICAL DATA DATA SHEET 816, REV. - HERMETIC POWER MOSFET N-CHANNEL, LOGIC LEVEL œ œ œ œ 60 VOLT, 0.05 OHM, 30A MOSFET Fast Switching Low RDS on Logic Level Gate Driver MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

mosfet triggering circuit

Abstract: scr gate driver ic driver circuit for MOSFET ICL7667 ICL7667 SCR TRIGGER PULSE TRANSFORMER Pulse transformer based mosfet triggering circuit HV400 power mosfet triggering circuit SCHEMATIC POWER SUPPLY WITH scr High power diode 5000V
Contextual Info: Harris Semiconductor No. AN9301 Harris Intelligent Power April 1994 HIGH CURRENT LOGIC LEVEL MOSFET DRIVER Author: John Prentice Introduction Although the HV400 was designed as an interface between a pulse transformer and a power MOSFET, there are applications for high current MOSFET gate drive controlled

AN569

Abstract: MTB52N06VL MTB52N06VLT4 550 SOT143 Thermal Resistance to ambient SMB Case
Contextual Info: MTB52N06VL Preferred Device Power MOSFET 52 Amps, 60 Volts, Logic Level N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

MTP15N06VL

Abstract: AN569
Contextual Info: MTP15N06VL Preferred Device Power MOSFET 15 Amps, 60 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

iec60134

Abstract: JESD22-A108C JESD22-A108-C JESD22A108C AN10721 JESD22 JESD22*108 A/IEC60134
Contextual Info: AN10721 Logic level VGS ratings for NXP power MOSFETs Rev. 01 — 18 July 2008 Application note Document information Info Content Keywords gate–source voltage, logic level, rating Abstract Explanation of the link between the absolute maximum rating of gate–source voltage VGS for a logic level power MOSFET, the design

AN569

Abstract: MTP3055VL DSA00107673
Contextual Info: MTP3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

BUK10B-50US

Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
Contextual Info: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic

TOPFET

Abstract: BUK113-50DL buk113
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other

TOPFET

Abstract: BUK107-50GL
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT60N03 Power MOSFET 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET 1 „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the

AN9321

Abstract: AN9322 MS-012AA RF1K49156 RF1K4915696 AN7254 AN7260 TB334
Contextual Info: RF1K49156 Data Sheet August 1999 6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET File Number 4011.3 Features • 6.3A, 30V This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which