POWER MOSFET IRF DATA Search Results

MOSFET IRF 940

Abstract: irf 940 irf 48v mosfet power MOSFET IRF data DIODE 851 tr/MOSFET IRF 940
Contextual Info: IRF MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ. 1

irf440

Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t

Contextual Info: PD-95262 IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from

IRf 334

Contextual Info: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

IRF Power MOSFET code marking

Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
Contextual Info: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier

power MOSFET IRF data

Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
Contextual Info: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF FET

Abstract: IRf 48 MOSFET IRF n 30v pcb diagram for 12v charge controller mosfet p channel irf McMaster-Carr MCR03EZHJ IR3624MPBF IRF7823PBF IRF7832Z
Contextual Info: IRPP3624-12A POWIR+ Chipset Reference Design #0612 12Amp Single Phase Synchronous Buck POWIR+TM Chipset Reference Design using IR3624MPBF PWM & Driver IC and IRF7823 and IRF7832Z MOSFET By Steve Oknaian, Senior Applications Engineer www.irf.com RD#0612 1 Table of Contents

Contextual Info: Data Sheet No.PD60180-C IR3220S FULLY PROTECTED H-BRIDGE FOR D.C. MOTOR Features The IR3220S is a fully protected dual high side switch I.C that integrates an H–bridge motor controller with two very efficient high side MOSFETs in a single 20-pin package. The IR3220S

IC 7484

Abstract: IR3220S IC 7484 pin diagram AN-1032 IRF7484 IRF7484Q shunt resistor current motor E-041 IR Sensor obstacle detection MOTOR DRIVER IC LM 2003
Contextual Info: Data Sheet No.PD60180-C IR3220S FULLY PROTECTED H-BRIDGE FOR D.C. MOTOR Features The IR3220S is a fully protected dual high side switch I.C that integrates an H–bridge motor controller with two very efficient high side MOSFETs in a single 20-pin package. The IR3220S

irf 210a

Abstract: IRF 120A IRF 840 MOSFET irf 210 mosfet IRF 504 irf 840 if IRF 150a IRFB3206 smps 48v 12v irf 48v mosfet
Contextual Info: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

AN-994

Abstract: irfb3207pbf
Contextual Info: PD - 95708D IRFB3207PbF IRFS3207PbF IRFSL3207PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt

AN-994

Abstract: IRFB3207 IRFS3207 IRFSL3207
Contextual Info: PD - 96893C IRFB3207 IRFS3207 IRFSL3207 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

IRFB4410ZPBF

Abstract: Sl4410 AN-994 mosfet irf 150
Contextual Info: PD - 97278C IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S Benefits

IRF 840 MOSFET

Abstract: IRFB3206PbF AN-994 IRFB3206 IRF Power MOSFET code marking irf 210a
Contextual Info: PD - 97097 IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D VDSS RDS on typ.

IRFB4310

Abstract: irf 540 mosfet IRFS4310 AN-994 IRFSL4310 irf 30A
Contextual Info: PD - 96894A IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

irf 249 A

Contextual Info: IRFW/I720A Advanced Power MOSFET FEATURES B^DSS 400 V - ♦ Avalanche Rugged Technology 1 .8 Q CO a II ♦ Lower Input Capacitance CO ^ D S o n = ♦ Rugged Gate Oxide Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

AN1001

Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
Contextual Info: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

Contextual Info: PD - 95708C IRFB3207PbF IRFS3207PbF IRFSL3207PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt

mosfet p-channel 300v irf

Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
Contextual Info: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier

MOSFET IRF 380

Abstract: MOSFET IRF 1010 NS4263 AN-994 IRFB4610 IRFS4610 IRFSL4610 irf 100v 100A
Contextual Info: PD - 96906C IRFB4610 IRFS4610 IRFSL4610 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRF 840 MOSFET

Abstract: IRF 120A irf 210 mosfet irf 840 if irf 210a IRF 150a AN-994 97097B
Contextual Info: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

z44n

Abstract: mosfet z44n specification of mosfet irf IRF MOSFET driver IRF Power MOSFET code marking IRF n CHANNEL MOSFET 1N4148 marking SOT89 MARKING CODE CL sot89 Marking mosfet RL Z44N
Contextual Info: AP436 Synchronous Rectifier MOSFET Driver „ Features „ General Descriptions - VOUT slew-rate minimum 100V/uS @ CL=3000pF - IOUT sink & source =1.2 / 0.9 A - Safety considered. - Reduce power system thermal & increase system efficiency. - Pb-free packages: SOT89-5L, SOP-8L

IRF 344

Abstract: IRF n 30v
Contextual Info: IRFW/I710A A d van ced Power MOSFET FEATURES B ^D S S - 400 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area 2 A D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

IRF MOSFET 100A 200v

Abstract: MOSFET 150 N IRF
Contextual Info: IRFW/I740A A d van ced Power MOSFET FEATURES BV DSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n - 0 -5 5 Q ♦ Lower Input Capacitance In = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V