POWER MOSFET DATA BOOK Search Results

MOSFET BOOK

Abstract: book mosfet
Contextual Info: 1233-7091 Septem ber 1997 Advanced Power MOSFET High Voltagei 700~~900\ ' 1998 DATA BOOK ELECTRONICS

j718

Abstract: VK200/10-3B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

Mosfet J49

Contextual Info: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND RF POWER FET

905-170

Abstract: MRF3010 VK200 VK20019-4B
Contextual Info: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

D1843

Abstract: MP45F 2SK3326B-S17-AY 2sk3326b 2SK3326
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

D1843

Abstract: 2SK3326B-S17-AY 2SK3326B 2sk3326 mosfet 4702 MP45F
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

2SK3325B

Abstract: MP-25ZK D1842 D18429EJ2V0DS00 2SK3325B-S19-AY 2SK3325B-ZK-E1-AY 2SK3325B-ZK-E2-AY MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

Contextual Info: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

MOSFET BOOK

Contextual Info: ft 1232-7091 Septem ber 1997 Advanced Power MOSFET^ Medium Voltage 200 ~ 600 V 1998 DATA BOOK E L E C T R O N IC S

sd 431 transistor

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4057-S15-AY

Mosfet J49

Abstract: DL110 MRF171A MRF171 VK200 MOTOROLA MASTER RF Products
Contextual Info: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz.

726 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS

Abstract: 741 datasheet motorola MOTOROLA POWER 726 MOS FET TRANSISTOR MOTOROLA TRANSISTOR 726 motorola MOSFET 935 MRF166W motorola rf book
Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.

Mosfet J49

Abstract: MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912
Contextual Info: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. •

PD168807

Contextual Info: Preliminary Data Sheet PD168807 4-ch Output DC-DC Converter Controller IC R03DS0001EJ0200 Rev.2.00 Mar 18, 2011 Description The μ PD168807 is a DC-DC converter controller IC that consists of 3-ch output circuits containing power MOSFET and 1-ch output circuits that can directly drive power MOSFET.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)

2SJ687

Abstract: 2sj687-zk-e1-ay d1871 2SJ687-ZK-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)

DC-M4

Abstract: SC-95
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1930 P-CHANNEL MOSFET FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The μPA1930 is a P-channel MOSFET designed for power switch of portable machine and so on. 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05

2SK4079

Abstract: QN7002
Contextual Info: Preliminary Data Sheet QN7002 R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source.

2SK4079

Abstract: QN7002 QN7002-T1B-AT
Contextual Info: Preliminary Data Sheet QN7002 R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source.

PA2680T1E

Abstract: A4460
Contextual Info: DATA SHEET MOSFET WITH SCHOTTKY BARRIER DIODE PA2680T1E N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PIN CONNECTION Top View DESCRIPTION The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. 6 5 4

PA2680T1E

Abstract: G17661EJ2V0DS00
Contextual Info: DATA SHEET MOSFET WITH SCHOTTKY BARRIER DIODE PA2680T1E N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PIN CONNECTION Top View DESCRIPTION The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. 6 5 4

Contextual Info: DATA SHEET Tentative Part No. NN30311A Package Code No. ⎯ Publication date: July 2012 Ver. EB 1 NN30311A NN30311A (Tentative) 6A Synchronous DC-DC Step down Regulator comprising of Controller IC and Power MOSFET „ Overview NN30311A is a synchronous DC-DC Step down Regulator (1-ch) comprising of a Controller IC and two Power MOSFET,