POWER MOSFET DATA BOOK Search Results

D1843

Abstract: 2SK3326B-S17-AY 2SK3326B 2sk3326 mosfet 4702 MP45F
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

Contextual Info: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4057-S15-AY

Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.

Mosfet J49

Abstract: MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912
Contextual Info: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. •

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)

2SJ687

Abstract: 2sj687-zk-e1-ay d1871 2SJ687-ZK-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS on 1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)

2SK4079

Abstract: QN7002
Contextual Info: Preliminary Data Sheet QN7002 R07DS0269EJ0100 Rev.1.00 Mar 11, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source.

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0899F06-30 N-CHANNEL SILICON POWER MOSFET FOR UHF-TV TRANSMITTER POWER AMPLIFIER FEATURES • PACKAGE DRAWING Unit: mm High output, high gain, high efficiency Po = 1 00 W, G l = 1 2 dB,

NEC 9001

Abstract: 2SK2597 J549 NEC MOSFET PUSHPULL
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION PACKAGE DRAWING Unit: mm • High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2650T1E DUAL N-CHANNEL MOSFET FOR SWITCHING PIN CONNECTION Top View DESCRIPTION The μ PA2650T1E is a switching device, which can be driven directly by a 4.5 V power source. 1 6 2 5 3 4 MOSFET2 The μ PA2650T1E contains dual MOSFET which features a

nec 88n04

Abstract: 88n04 NP88N04MHE NP88N04EHE NP88N04EHE-E1-AY NP88N04EHE-E2-AY NP88N04KHE NP88N04KHE-E1-AY NP88N04KHE-E2-AY NP88N04CHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04EHE, NP88N04KHE NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04CHE,NP88N04DHE,NP88N04EHE,NP88N04KHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

d1415

Abstract: NP36N055SLE NP36N055HLE NP36N055ILE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE, NP36N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER Transistor designed for high current switching applications.

NP32N055SHE

Abstract: NP32N055HHE NP32N055IHE d1415
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE, NP32N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER Transistors designed for high current switching applications.

NP32N055SLE

Abstract: NP32N055HLE NP32N055ILE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HLE,NP32N055ILE,NP32N055SLE SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect PART NUMBER Transistor designed for high current switching applications.

6A4 DIODE

Abstract: 30-PIN
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ` µPD168001 MONOLITHIC 4-CHANNEL H BRIDGE + LOW-SIDE SWITCH DESCRIPTION The µPD168001 is a monolithic 4-channel H bridge driver and low-side switch IC that uses a power MOSFET at the output stage. Because of the MOSFET at the output stage, both the inputs and outputs are interfaced by PWM

NP34N055SLE

Abstract: NP34N055HLE NP34N055ILE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HLE, NP34N055ILE, NP34N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Tran- PART NUMBER sistors designed for high current switching applications.

NP34N055SHE

Abstract: NP34N055HHE NP34N055IHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HHE, NP34N055IHE, NP34N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Tran- PART NUMBER sistors designed for high current switching applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2782GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2781GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2781GR is N-channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter

NEC MOSFET PUSHPULL

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • PACKAGE DRAWING Unit: mm • • • High output, high gain Po = 100 W, G l = 13 dB (TYP.) (f = 900 MHz)

NP100P06PLG

Abstract: MP-25ZP NP100P06PLG-E1-AY NP100P06PLG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P06PLG-E1-AY

NP100P06PDG

Abstract: NP100P06PDG-E1-AY MP-25ZP NP100P06PDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY