POWER MOSFET 600V 600A Search Results

95A 640

Abstract: APT0406 APT0501 APT0502 1320UJ
Contextual Info: APTC60AM24SCTG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45m max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83m max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 2 1 4 Q2

Contextual Info: APTC60AM24SCTG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 600V RDSon = 24m max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • Motor control  Switched Mode Power Supplies  Uninterruptible Power Supplies

Contextual Info: APTC60AM24SCTG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 2 CR1 1 4

300V dc dc boost converter

Contextual Info: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 CR1 2 1 4

Contextual Info: STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND N-channel 600V - 0.17Ω - 17A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS @ TJmax STB21NM60ND STI21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND

F30NM60ND

Abstract: 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND
Contextual Info: STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS RDS(on) Max ID STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND

Contextual Info: APT106N60B2C6 600V 106A 0.035 COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extremedv/dt Rated • Dual die (parallel) G • Popular T-MAX Package

apt60dq60

Abstract: APT106N60B2C6
Contextual Info: APT106N60B2C6 600V 106A 0.035Ω COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Dual die (parallel) G • Popular T-MAX Package

Contextual Info: APT77N60BC6 APT77N60SC6 600V COOLMOS 77A 0.041 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

Contextual Info: APT53N60BC6 APT53N60SC6 600V COOLMOS 53A 0.070 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

Contextual Info: APT30N60KC6 600V 30A COOLMOS .125 Super Junction MOSFET Power Semiconductors TO-220 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extremedv/dt Rated G S All Ratings per die: TC = 25°C unless otherwise specified.

ce 2826 ic

Contextual Info: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

APT77N60BC6

Abstract: APT77N60SC6
Contextual Info: APT77N60BC6 APT77N60SC6 600V COOLMOS 77A 0.041Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

APT38N60BC6

Abstract: APT38N60B
Contextual Info: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

Contextual Info: APT30N60BC6 APT30N60SC6 600V COOLMOS 30A .125 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D G S All Ratings per die: TC = 25°C unless otherwise specified.

DD2030

Abstract: diode 53a APT53N60BC6 APT53N60B
Contextual Info: APT53N60BC6 APT53N60SC6 600V COOLMOS 53A 0.070Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

Contextual Info: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

APT38N60B

Abstract: max2849
Contextual Info: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

Mosfet 30A 400v

Abstract: j649 mosfet 600V 30A
Contextual Info: APT30N60KC6 600V 30A COOLMOS .125Ω Super Junction MOSFET Power Semiconductors TO-220 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated G S All Ratings per die: TC = 25°C unless otherwise specified.

DV15

Abstract: Infineon CoolMOS APT30N60BC6 APT30N60B
Contextual Info: APT30N60BC6 APT30N60SC6 600V COOLMOS 30A .125Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D G S All Ratings per die: TC = 25°C unless otherwise specified.

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

IRGDDN600K06

Abstract: 30V 600A igbt 600A 500v igbt mosfet 600V 600A circuit INT-A-PAK Package int-a-pak OF IGBT 600A 600V 10 600a - 030 DOUBLE INT-A-PAK Package
Contextual Info: Provisional Data Sheet PD-9.1197 Í^ R e c tifi^ gggjHecmier IRGDDN600K06 ir g r d n 600K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"