POWER MOSFET 50V 10A Search Results

Contextual Info: PD-94192D HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.11Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRL7Y1905C

Contextual Info: PD - 94192C HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.125Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRL7Y1905C

Contextual Info: PD - 94192 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.125Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRL7Y1905C

Contextual Info: PD - 94192B HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.125Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

VRF150

Abstract: hf power transistor mosfet 30MHZ 150W RF POWER VERTICAL MOSFET
Contextual Info: 150W, 50V, 150MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF150 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 10dB TYPICAL GAIN @ 150MHz, 50V 150W WITH 18dB MIN GAIN @ 30MHz, 50V

VRF151

Abstract: vertical mosfet RF POWER VERTICAL MOSFET
Contextual Info: 150W, 50V, 175MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF151 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 14dB TYPICAL GAIN @ 175MHz, 50V 150W WITH 22dB TYPICAL GAIN @ 30MHz, 50V

IRF7103Q

Contextual Info: PD - 93944D IRF7103Q AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats VDSS Benefits 50V l l l l l l Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance

Contextual Info: PD - 96101A IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications VDSS l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats HEXFET Power MOSFET RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V 1.5A 50V Benefits l

Contextual Info: PD - 96101B IRF7103QPbF AUTOMOTIVE MOSFET Typical Applications VDSS l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats HEXFET Power MOSFET RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V 1.5A 50V Benefits l

2843000202

Abstract: 4406 mosfet 300 watt mosfet amplifier Amp. mosfet 1000 watt ARF441 Fair-Rite bead 13.56MHZ mosfet ARF440 mosfet power amplifier pulse transformer
Contextual Info: D TO-247 G ARF440 ARF441 S 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION 1-15MHz POWER MOS IV N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull

2843000202

Abstract: ARF440 ARF441 power amplifier, 13.56MHz ARF440 300 watt mosfet amplifier Fair-Rite bead F624-19Q1 13.56Mhz rf amplifier F624-19-Q1 13.56MHz
Contextual Info: D TO-247 G ARF440 ARF441 S 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION 1-15MHz POWER MOS IV N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull

Contextual Info: PD - 93944D IRF7103Q AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET l Anti-lock Braking Systems ABS l Electronic Fuel Injection l Power Doors, Windows & Seats VDSS Benefits 50V l l l l l l RDS(on) max (mW) ID 130@VGS = 10V 3.0A 200@VGS = 4.5V

transformer 0-12v

Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101
Contextual Info: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

blf177

Abstract: 2204B MRF151 VRF152
Contextual Info: VRF152 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

"RF MOSFET" 300W

Abstract: arco 467 trimmer 300WF
Contextual Info: VRF2933 50V 300W 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation

Unelco J101

Abstract: VK200-4B vk200 vrf150 50v L4
Contextual Info: VRF150 50V 150W 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation

VK200-4B

Abstract: diode 4937 J101 VRF151 0-12V 2204B MRF151
Contextual Info: VRF151 PRELIMINARY 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

mrf 510

Abstract: VK200-4B VRF150 60WV MRF 283 J101 0-12V 2204B Unelco j101
Contextual Info: VRF150 PRELIMINARY 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

MRF 283

Abstract: vrf150
Contextual Info: VRF150 PRELIMINARY 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF151 VRF151MP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF150 VRF150MP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF152 VRF152MP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

SD2941-10

Abstract: 2204B VRF152 VRF152E SD2941
Contextual Info: VRF152E 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152E is a thermally-enhanced version of the VRF152. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without

Contextual Info: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation