POWER MOSFET 200 AMPERE Search Results

200V 200A mosfet

Abstract: mosfet 400a 200V N mosfet 100v 200A "MOSFET Module" power mosfet 200A STY100NS20FD mosfet 200A time switch speed off 200 ampere MOSFET datasheet welding mosfet QJD0240002
Contextual Info: QJD0240002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 400 Amperes/200 Volts Description: Powerex Dual MOSFET Module is designed specially for customer applications. The module is isolated for easy mounting with other

"MOSFET Module"

Abstract: QJB0121002 MOSFET 50V 100A FS70UMJ-2 mosfet module
Contextual Info: QJB0121002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Four MOSFET Module 210 Amperes/100 Volts Description: Powerex power MOSFET Module designed specially for customer applications. Each module consists of four Mosfet transistors in an H-Bridge configuration with each

FS70UM-2

Abstract: QJD0142002 "dual MOSFET Module" "MOSFET Module"
Contextual Info: QJD0142002 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 100 Volts 420 Amperes Description: Powerex Dual Mosfet Module designed specially for customer applications. Features: • • • • • • • Isolated Mounting

"MOSFET Module"

Abstract: "dual MOSFET Module" 6900 mosfet FS70UMJ-2 QJD0142003
Contextual Info: QJD0142003 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 100 Volts 420 Amperes Description: Powerex Dual Mosfet Module designed specially for customer applications. Features: • • • • • • • Isolated Mounting

fs14sm-18a

Abstract: "MOSFET Module" QJS0950001 module 900 FS14SM18A n mosfet low vgs
Contextual Info: QJS0950001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Single Power MOSFET Module 900 Volts 500 Amperes Description: Powerex Single Mosfet Module designed specially for customer applications. Features: • • • • • • C Isolated Mounting

"MOSFET Module"

Abstract: "Battery Chargers" 200 ampere MOSFET datasheet 7272 POWER MODULES 160A QJD0232001 ds 470 53 power mosfet module
Contextual Info: QJD0232001 320 Amperes Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Power MOSFET Module 320 Amperes 250 Volts Error! Not a valid link. Description: Powerex Dual MOSFET Half Bridge Modules with Avalanche Body Diodes

k 2101 MOSFET

Abstract: 2N6789
Contextual Info: POWER MOSFET TRANSISTORS IK 200 Volt, 0.80 Ohm N-Channel 2N679° DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching

AN569

Abstract: NTP30N20
Contextual Info: NTP30N20 Preferred Device Advance Information Power MOSFET 30 Amps, 200 Volts N–Channel Enhancement–Mode TO–220 http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V Typ

AN569

Abstract: NTB30N20 NTB30N20T4 SMD310
Contextual Info: NTB30N20 Advance Information Power MOSFET 30 Amps, 200 Volts N–Channel Enhancement–Mode D2PAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V Typ Fast Recovery Diode

transistor c 2335

Abstract: AN569 NTP30N20
Contextual Info: NTP30N20 Preferred Device Advance Information Power MOSFET 30 Amps, 200 Volts N–Channel Enhancement–Mode TO–220 http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V Typ

N20E

Abstract: on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
Contextual Info: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast

ufn620

Contextual Info: POWER MOSFET TRANSISTORS UFN620 200 Volt, 0.8 Ohm N-Channel UFN622 UFN623 FEATURES DESCRIPTION • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rnsiom and a high transconductance.

AN569

Abstract: MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
Contextual Info: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N–Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast

ufn240

Abstract: 25jo TH 2190 mosfet
Contextual Info: POWER MOSFET TRANSISTORS UFN240 UFN242 UFN243 200 Volt, 0.2 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

AN569

Abstract: NTB30N20 NTB30N20T4 SMD310
Contextual Info: NTB30N20 Advance Information Power MOSFET 30 Amps, 200 Volts N–Channel Enhancement–Mode D2PAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a Discrete • • • 30 AMPERES 200 VOLTS 68 mΩ @ VGS = 10 V Typ Fast Recovery Diode

AN569

Abstract: MTY55N20E
Contextual Info: MTY55N20E Preferred Device Power MOSFET 55 Amps, 200 Volts N−Channel TO−264 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with fast recovery

AN569

Abstract: MTW32N20E
Contextual Info: MTW32N20E Preferred Device Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast

Contextual Info: MTB20N20E Preferred Device Power MOSFET 20 Amps, 200 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

2N6783

Contextual Info: POWER MOSFET TRANSISTORS 200 Volt, 1.5 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability 2N6783 JTX, JTXV 2N6784 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

MTW32N20E

Contextual Info: MTW32N20E Preferred Device Power MOSFET 32 Amps, 200 Volts N–Channel TO–247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast

AN569

Abstract: MTW32N20E
Contextual Info: MTW32N20E Preferred Device Power MOSFET 32 Amps, 200 Volts N–Channel TO–247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast

MTY55N20E

Abstract: AN569
Contextual Info: MTY55N20E Preferred Device Power MOSFET 55 Amps, 200 Volts N–Channel TO–264 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery

ufn250

Abstract: UFN253
Contextual Info: T2 UNITRODE CORP 9347963 UNITRODE DQIOLHE ? ^ 92D CORP D 10642 UFN250 UFN251 UFN252 UFN253 POWER MOSFET TRANSISTORS r 3? 1 3 200 Volt, 0.085 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.

Contextual Info: POWER MOSFET TRANSISTORS UFN250 UFN252 UFN253 200 Volt, 0.085 Ohm N-Channel FEATURES DESCRIPTION • Fast Switching • Low Drive Current The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosum and a high transconductance.