POWER MOSFET Search Results

Contextual Info: NTD60N03 Power MOSFET 60 Amps, 28 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • • • • Power Supplies Converters

Contextual Info: APT30M36JLL 76A 0.036W 300V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

Contextual Info: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z

SDC40

Contextual Info: 2SK2875-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

7v71

Contextual Info: 2SK2760-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK1088-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier

Contextual Info: 2SK2755-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK2764-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

2SK3597-01

Abstract: power supply 100v 30a schematic
Contextual Info: 2SK3597-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: TPD1053F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1053F Motor, Solenoid, Lamp Drivers High-side Power Switch The TPD1053F is a monolithic power IC for high-side switches. The IC has a vertical MOSFET output which can be directly

Contextual Info: APT50M50L2FLL 500V 89A 0.050W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Sj 47 diode

Abstract: power supply 100v 30a schematic
Contextual Info: 2SK3646-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)

2SK3674-01L

Abstract: DIODE SJ 66
Contextual Info: 2SK3674-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS Uninterruptible Power Supply

Mhz 434

Contextual Info: APT8024B2FLL APT8024LFLL 800V 31A 0.240W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

APT8030LVR

Contextual Info: APT8030LVR 800V 27A 0.300Ω POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: 2SK2874-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings T-pack S T-pack (L) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: APT6011B2VFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

019N03L

Abstract: BSZ019N03LS
Contextual Info: n-Channel Power MOSFET OptiMOS BSZ019N03LS Data Sheet 2.1, 2011-09-21 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSZ019N03LS 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together

APT8030LVFR

Contextual Info: APT8030LVFR Ω 27A 0.300Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT8020JLL

Abstract: APT30DF100
Contextual Info: APT8020JLL 800V POWER MOS 7 R 33A 0.200Ω MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8024JLL

Contextual Info: APT8024JLL 800V 29A 0.240Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT40M35JVR 93A 0.035Ω 400V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

diode 304

Abstract: 11200-1 B2VR 72 RG
Contextual Info: APT30M40B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT50M85B2VR APT50M85LVR 500V 56A 0.085W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®