POWER MOSFET Search Results
POWER MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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| AM9513ADIB |
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AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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| CA3130T |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| CA3130AT/B |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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POWER MOSFET Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| Power MOSFET single-shot and repetitive avalanche ruggedness rating |
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AN10273 - Power MOSFET single-shot and repetitive avalanche ruggedness rating | Original | 63.09KB | 13 |
POWER MOSFET Price and Stock
ROHM Semiconductor RUF015N02TLMOSFETs Med Pwr, Sw MOSFET P Chan, 20V, 1.5A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RUF015N02TL | Reel | 78,000 | 3,000 |
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Vishay Intertechnologies SIHD1K4N60E-GE3MOSFETs 600V Vds 30V Vgs DPAK (TO-252) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHD1K4N60E-GE3 | Reel | 9,000 | 3,000 |
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Vishay Intertechnologies SIHH068N60E-T1-GE3MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHH068N60E-T1-GE3 | Reel | 6,000 | 3,000 |
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Vishay Intertechnologies SISS22DN-T1-GE3MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8S |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SISS22DN-T1-GE3 | Reel | 6,000 | 3,000 |
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Vishay Intertechnologies SIR122DP-T1-RE3MOSFETs 80V Vds 20V Vgs PowerPAK SO-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR122DP-T1-RE3 | Reel | 6,000 | 3,000 |
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POWER MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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HIGH POWER MOSFET TOSHIBA
Abstract: all mosfet power TPD7101F MOSFET TOSHIBA
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TPD7101F TPD7101F HIGH POWER MOSFET TOSHIBA all mosfet power MOSFET TOSHIBA | |
Yamaha YDA
Abstract: D-20 FW332 YDA135 YDA135-VZ yamaha audio amplifier
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YDA135 W-20W YDA135 Yamaha YDA D-20 FW332 YDA135-VZ yamaha audio amplifier | |
OUT418Contextual Info: TPD2005F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2005F High-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2005F is an 8-channel high-side switch array for vertical power MOSFET output. A monolithic power IC, it can directly drive a power |
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TPD2005F TPD2005F OUT418 | |
equivalent 2sk2837 mosfetContextual Info: Power MOSFET Heat Sink Design Power MOSFET in Detail 6. Heat Sink Design 6.1 Maximum Allowable Power Dissipation and Radiation Equivalent Circuits When the circuit has been designed for fully adequate thermal stability, the maximum allowable power dissipation PDmax for power MOSFETs can be determined based on the power MOSFET’s |
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"CHAPTER 1 Introduction to Power Semiconductors"
Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
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utc 324
Abstract: UF3055
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UF3055 UF3055 UF3055L-TN3-R UF3055G-TN3-R O-252 QW-R502-443 utc 324 | |
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Contextual Info: Analog Power AM2314N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AM2314N OT-23 | |
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Contextual Info: Analog Power AM2398N N-Channel 60V D-S MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power |
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AM2398N OT-23 | |
ISL6258
Abstract: ISL6258A SIS630 isl6247 ISL6333 ROM 5 SOT-23 ISL83204A application note sempron i865 ISL6744
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1-888-INTERSIL ISL97635 ISL6258 ISL6258A SIS630 isl6247 ISL6333 ROM 5 SOT-23 ISL83204A application note sempron i865 ISL6744 | |
TA1307PContextual Info: TA1307P TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1307P Integrated Circuit For Standby Power-Supply Control TA1307P is a switching power-supply IC used as a standby power-supply control such as small power-supply. This IC, Slight power-supply can do that a MOSFET is |
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TA1307P TA1307P | |
UF3055Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3055 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION 1 TO-252 As an N-channel enhancement mode power MOSFET, the UTC UF3055 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls |
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UF3055 O-252 UF3055 OT-223 UF3055L-AA3-R UF3055G-AA3-R UF3055L-TN3-R UF3055G-TN3-R | |
4x50W
Abstract: 12v car woofer amplifier 50W car power amplifier car woofer amplifier circuit diagram Mosfet based woofer Amplifier circuit diagram tda7563b 80n70 50w LF amplifier class D mosfet amplifier diagram mosfet woofer amplifier
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TDA7563B 4x28W/4 4x50W 4x72W/2 Flexiwatt27 PowerSO36 /16dB 12v car woofer amplifier 50W car power amplifier car woofer amplifier circuit diagram Mosfet based woofer Amplifier circuit diagram tda7563b 80n70 50w LF amplifier class D mosfet amplifier diagram mosfet woofer amplifier | |
linear applications of power MOSFET IRF640
Abstract: irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 IRF643
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IRF640, IRF641, IRF642, IRF643 92CS-3374I IRF643 1F640, linear applications of power MOSFET IRF640 irf640 IRF641 IRF640 circuit IRF642 F640 RF642 transistors irf640 | |
irf310
Abstract: irf 3280 IRFF311 IRFF310 IRFF312 IRFF313
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IRFF310, IRFF311, IRFF312, IRFF313 92CS-33741 IRFF313 FF312 irf310 irf 3280 IRFF311 IRFF310 IRFF312 | |
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SMD surface mount resistor 1R5
Abstract: BUK9E4R4-80E BUK7E1R6-30E BUK9E2R8-60E BUK9Y7R6 BUK9C10-55BIT
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AEC-Q101 AEC-Q101, SMD surface mount resistor 1R5 BUK9E4R4-80E BUK7E1R6-30E BUK9E2R8-60E BUK9Y7R6 BUK9C10-55BIT | |
IRFF130
Abstract: IRFF131 IRFF132 IRFF133 C 3259
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IRFF130, IRFF131, IRFF132, IRFF133 0V-100V 92CS-33741 IRFF132 IRFF133 IRFF130 IRFF131 C 3259 | |
APT0406
Abstract: APT0501 APT0502 APTM50HM65FTG NTC20
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APTM50HM65FTG APT0406 APT0501 APT0502 APTM50HM65FTG NTC20 | |
APT0406
Abstract: APT0501 APT0502 APTM20HM16FTG
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APTM20HM16FTG APT0406 APT0501 APT0502 APTM20HM16FTG | |
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Contextual Info: APT8020JLL 800V 33A 0.200W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
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APT8020JLL OT-227 | |
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Contextual Info: APT50M50JLL 500V 71A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
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APT50M50JLL OT-227 | |
Diode 188Contextual Info: APT6010JLL 600V 47A 0.100W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
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APT6010JLL OT-227 Diode 188 | |
DIODE 720Contextual Info: APT20M10JLL 200V 185A 0.010W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
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APT20M10JLL OT-227 DIODE 720 | |
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Contextual Info: APT30M30JLL 88A 0.030W 300V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
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APT30M30JLL OT-227 | |
apt8024jllContextual Info: APT8024JLL 800V 29A 0.240W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses |
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APT8024JLL OT-227 apt8024jll | |