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    POWER JFET Search Results

    POWER JFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1D120603MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN PDF
    MGN1D050603MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 5-6/-3V GAN PDF
    MGN1S0512MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN PDF
    MGN1S1212MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN PDF
    MGN1S1208MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN PDF

    POWER JFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    tlo34

    Abstract: tl031 equivalent ic
    Contextual Info: TL03x, TL03XA, TL03xY ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS SLOSI 8O- FEBRUARY 1997 Direct Upgrades for the TL06x Low-Power BiFETs • Higher Slew Rate And Bandwidth Without Increased Power Consumption Low Power Consumption 6.5 mW/Channel Typ


    OCR Scan     		TL03x, TL03XA, TL03xY TL06x TL031A) TL03x TL031 tlo34 tl031 equivalent ic PDF

    Contextual Info: ADVANCED POWER Tec h n o lo g y APT5014LVR soov 37a o.i4on POWER MOS V Power MOS V™ is a new generation of high voltage N-Channe! enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT5014LVR O-264 00A/ps) MIL-STD-750 O-264AA PDF

    Contextual Info: A d v a n ced POWER Te c h n o l o g y APT10086SVR iooov i3a o.86oí2 POWER MOS V Power MOS Visa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		APT10086SVR 00A/ns) MIL-STD-750 PDF

    Contextual Info: • R A dvanced W /Æ POWER Te c h n o lo g y ' APT20M22JVR 200V 97A 0.022Q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT20M22JVR OT-227 APT20M22JVR E145592 PDF

    Contextual Info: • R A dvan c ed W*Æ POWER Techno lo g y APT8015JVFR soov 44a o.isoq POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		APT8015JVFR OT-227 APT8015JVFR E145592 PDF

    Contextual Info: APT6015LVFR 600V POWER MOS V 38A 0.150W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6015LVFR O-264 O-264 PDF

    Contextual Info: APT6011LVFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6011LVFR O-264 O-264 PDF

    APT6015JVFR

    Contextual Info: APT6015JVFR 600V POWER MOS V 35A 0.150W FREDFET S S ® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS


    Original     		APT6015JVFR E145592 OT-227 APT6015JVFR PDF

    Contextual Info: APT6030BVFR 600V POWER MOS V 21A 0.300W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6030BVFR O-247 O-247 PDF

    APT50M80B2VFR

    Abstract: ED 58A
    Contextual Info: APT50M80B2VFR 500V POWER MOS V 58A 0.080W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT50M80B2VFR Current031) MIL-STD-750 APT50M80B2VFR ED 58A PDF

    APT10M11LVR

    Contextual Info: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR PDF

    APT1001RBVR

    Contextual Info: APT1001RBVR 11A 1.000Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1001RBVR O-247 O-247 APT1001RBVR PDF

    APT1001RBVFR

    Contextual Info: APT1001RBVFR 11A 1.000Ω 1000V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		APT1001RBVFR O-247 O-247 APT1001RBVFR PDF

    APT20M45SVFR

    Contextual Info: APT20M45SVFR 56A 0.045Ω 200V POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		APT20M45SVFR MIL-STD-750 APT20M45SVFR PDF

    sony f190

    Abstract: 1403M sony power amplifier
    Contextual Info: SONY CXG1020N Power Amplifier for PHS Description The CXG1020N is a power amplifier MMIC for PHS, This IC is designed using the Sony's GaAs JFET process and operates at a single 3 V power supply. Features • Singfe positive power supply operation Voo=3.2 V


    OCR Scan     		CXG1020N CXG1020N GGlbb23 SSOP-SP-L01 SSOPG0S-P-0044 sony f190 1403M sony power amplifier PDF

    Contextual Info: APT12045L2VR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12045L2VR O-264 APT12045L2VR PDF

    APT10050LVR

    Contextual Info: APT10050LVR 21A 0.500Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10050LVR O-264 O-264 APT10050LVR PDF

    Contextual Info: APT1201R5BVR 1200V 10A 1.500Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1201R5BVR O-247 O-247 30TO-SOURCE PDF

    APT10086BVR

    Contextual Info: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVR O-247 O-247 APT10086BVR PDF

    Contextual Info: APT6025SVR 600V 25A 0.250W POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6025SVR PDF

    Contextual Info: APT12045L2VFR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12045L2VFR O-264 O-264 PDF

    APT12080LVR

    Abstract: 1200v diode
    Contextual Info: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12080LVR O-264 O-264 APT12080LVR 1200v diode PDF

    APT1001RSVR

    Contextual Info: APT1001RSVR 11A 1.000Ω 1000V POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		APT1001RSVR APT1001RSVR PDF

    APT8030LVR

    Contextual Info: APT8030LVR 800V 27A 0.300Ω POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original     		APT8030LVR O-264 O-264 APT8030LVR PDF