POWER FET Search Results

Contextual Info: 1U AC-DC power supply High power AC-DC power supply FETA series FETA series High power AC-DC power supply High High h power power High High h efficiency effi fficiiency y High High power pow power er 2500W 250 2500W 0W FETA2500B-48 (FETA2 (FE TA2500 500B-4

highside switch array

Abstract: toshiba marking code logic
Contextual Info: TPD2005F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2005F Low-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2005F is an 8-channel high-side switch array for vertical power MOS FET output. A monolithic power IC, it can directly drive a power

highside switch array

Abstract: TPD2005F
Contextual Info: TPD2005F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2005F Low-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2005F is an 8-channel high-side switch array for vertical power MOS FET output. A monolithic power IC, it can directly drive a power

FET marking code

Abstract: list of n channel fet marking code c 9 toshiba TOSHIBA DIODE GLASS TPD2005F SSOP24-P-300
Contextual Info: TPD2005F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2005F Low-Side Power Switch Array 8 Channels for Motors, Solenoids, and Lamp Drivers The TPD2005F is an 8-channel high-side switch array for vertical power MOS FET output. A monolithic power IC, it can directly drive a power

"gallium nitride" mosfet

Abstract: 48V MOSFET LM5113 GaN power MOSFET "gallium nitride" Half-Bridge Driver
Contextual Info: First Gate Driver for Enhancement Mode GaN Power FETs 100V Half-Bridge Driver Enables Greater Efficiency, Power Density, and Simplicity national.com/isolatedpower Gallium Nitride Power FETs Deliver New Levels of Power Density Enhancement mode Gallium Nitride GaN power FETs can

analog switch circuit using mosfet

Abstract: Thermal Shut Down Functioned MOSFET BD6520 BD6520F BD6522 BD6522F
Contextual Info: TECHNICAL NOTE Power Management Switch IC Series for PCs and Digital Consumer Product Large Current Output Power Management Switch ICs BD6520F, BD6522F ●Description The power switch for expansion module is a power management switch having one circuit of N-channel Power MOS FET.

09029EAT12

Abstract: 6522 mos BD6520F BD6522F MOS 6520 40 pin
Contextual Info: Power Management Switch IC Series for PCs and Digital Consumer Product Large Current Output Power Management Switch ICs BD6520F,BD6522F No.09029EAT12 Description The power switch for expansion module is a power management switch having one circuit of N-channel Power MOS FET.

Contextual Info: TECHNICAL NOTE Power Management Switch IC Series for PCs and Digital Consumer Product Large Current Output Power Management Switch ICs BD6520F, BD6522F ●Description The power switch for expansion module is a power management switch having one circuit of N-channel Power MOS FET.

Contextual Info: GENERAL PURPOSE POWER MANAGEMENT QUICK SELECTION GUIDE Switching Regulators, LDOs, Power Modules, FET Drivers, Analog Controllers INTERSIL POWER MANAGEMENT SOLUTIONS A HERITAGE OF POWERING INNOVATION Learn how Intersil’s power management technologies have

schematic diagram 48v ac regulator uc3842

Abstract: schematic diagram 48v dc motor speed controller 24v dc power supply with uc3842 UC3842 mosfet driver uc3842 half bridge schematic diagram 48v regulator uc3842 48v to 24v buck zvs flyback driver HIP4082 uc3842 AC-DC application
Contextual Info: Intersil Industrial and Communications Power Product Selection Guide Integrated FET Regulators Non-Isolated PWM Controllers Isolated PWM Controllers Power MOSFET Drivers Hot Plug Controllers ORing FET Controllers Supervisors Power Sequencers 2 | www.intersil.com/power

Contextual Info: SONY CXG101 ON Power Amplifier for PHS Description The CXG1010N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. Features • High output power 21.5 dBm • Positive power supply drive

CFK2062-P5

Abstract: CFK2062-P5-000T
Contextual Info: CFK2062-P5 Product Specifications July 1997 1 of 4 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features ❏ High Gain ❏ +30 dBm Power Output ❏ Proprietary Power FET Process ❏ >40% Linear Power Added Efficiency ❏ Surface Mount SO-8 Power Package Package Diagram

Contextual Info: CFK2062-P1 Product Specifications May 1996 1 of 4 800 to 900 MHz +30 dBm Power GaAs FET Features ❏ High Gain ❏ +30 dBm Power Output ❏ Proprietary Power FET Process ❏ >40% Linear Power Added Efficiency ❏ Surface Mount SO-8 Power Package Package Diagram

CFK2062-P1

Abstract: CFK2062-P1-000T
Contextual Info: CFK2062-P1 Product Specifications July 1997 1 of 4 800 to 900 MHz +30 dBm Power GaAs FET Features ❏ High Gain ❏ +30 dBm Power Output ❏ Proprietary Power FET Process ❏ >40% Linear Power Added Efficiency ❏ Surface Mount SO-8 Power Package Package Diagram

CFK2062-P3

Abstract: CFK2062-P3-000T
Contextual Info: CFK2062-P3 Product Specifications July 1997 1 of 4 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features ❏ High Gain ❏ +30 dBm Power Output ❏ Proprietary Power FET Process ❏ >40% Linear Power Added Efficiency ❏ Surface Mount SO-8 Power Package Package Diagram

NE900474-13

Abstract: NE900474-15 NE9004 NE900400G NE900 NE9002 AN-1001 NE9000 NE9001 UM1000
Contextual Info: NE9004 SERIES Ku-BAND POWER GaAs MESFET FEATURES • DESCRIPTION NE900474-13, -15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER 35 The NE9004 is a 0.5 micron recessed gate GaAs power FET for commercial and space amplifier and oscillator applications to 20 GHz. This device is part of the NE900 series of KuBand power transistors which includes the NE9000, NE9001

toshiba marking code logic

Abstract: TPD2005F highside switch array
Contextual Info: TO SH IBA TPD2005F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT TPD2005F HIGH-SIDE POWER SWITCH ARRAY 8 CHANNELS for MOTORS, SOLENOIDS, and LAMP DRIVES The TPD2005F is an 8-channel high-side switch array for vertical power MOS FET output. A monolithic power 1C, it

sony power amplifier

Contextual Info: SONY CXG1030N Power Amplifier for PHS Description 16 pin SSOP Plastic The CXG1030N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. Features • Output power 21 dBm • Positive power supply

n channel fet array

Abstract: TPD2007F
Contextual Info: TO SH IBA TPD2007F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTEGRATED CIRCUIT TPD2007F LOW-SIDE POWER SWITCH ARRAY 8 CHANNELS for MOTORS, SOLENOIDS, and LAMP DRIVES The TPD2007F is an 8-channel low-side switch array for vertical power MOS FET output. A monolithic power 1C, it

16PIN

Abstract: ACPR600 CXG1030N Formula1
Contextual Info: CXG1030N Power Amplifier for PHS Description The CXG1030N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. Features • Output power 21 dBm • Positive power supply 3.0 V • Low current consumption

7586 GE

Abstract: CFK2162-P1 CFK2162-P1-000T
Contextual Info: 0.8-1.0 GHz +34 dBm Power GaAs FET November 2007 - Rev 15-Nov-07 CFK2162-P1 Features Package Diagram High Gain +34 dBm Power Output Proprietary Power FET Process >45% Linear Power Added Efficiency +29 dBm with 30 dBc Third Order Products Surface Mount SO-8 Power Package

Contextual Info: 0.8-1.0 GHz +34 dBm Power GaAs FET July 2007 - Rev 31-Jul-07 CFK2162-P1 Features Package Diagram High Gain +34 dBm Power Output Proprietary Power FET Process >45% Linear Power Added Efficiency +29 dBm with 30 dBc Third Order Products Surface Mount SO-8 Power Package

MSC8004

Contextual Info: MSC8004 HIGH POWER GaAs FET FET PACKAGE TYPE 30 FEATURES INCLUDE: • High Output Power: P1dB = 1.6 W TYP @ 12 GHz • High power gain: GLP = 5 dB (TYP) @ 12 GHz • High power added efficiency: Hadd = 18% (TYP) @ 12 GHz APPLICATIONS: • S to Ku Band Power Amplifiers

Contextual Info: CFK2062-P5 ÊSH9t Product S p ecificatio n s M ay 1996 iof4 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package