POWER DIODE SPECIFICATION Search Results

APT0502

Abstract: APTDF400U120G fast recovery diode 1a 1200v
Contextual Info: APTDF400U120G Single diode Power Module VCES = 1200V IC = 400A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers

APT0502

Abstract: APTDF430U100G
Contextual Info: APTDF430U100G Single diode Power Module VCES = 1000V IC = 430A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers

APT0502

Abstract: APTDF500U40G
Contextual Info: APTDF500U40G Single diode Power Module VCES = 400V IC = 500A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Electric vehicles

APT0502

Abstract: APTDF450U60G
Contextual Info: APTDF450U60G Single diode Power Module VCES = 600V IC = 450A @ Tc = 80°C Application • Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Electric vehicles

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Marking A2t

Abstract: NTE6129 9300A
Contextual Info: NTE6129 Silicon Power Rectifier Diode 700 Amp, DO200AB Features: D High Power, Fast Recovery Time D High Current Capability D Low Forward Recovery Applications: D Snubber Diode for GTO D High Voltage Free−Wheeling Diode D Fast Recovery Rectifier Applications

STPSC1006D

Contextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

mitsubishi diode catalog

Abstract: 685nm 50mw 670NM 700NM ML1013R optima Wavelength Wavelength 685NM
Contextual Info: Mitsubishi ML1013R Laser Diode Specifications The Mitsubishi ML1013R is a high power AlGaInP laser diode which provides a stable, single transverse mode oscillation with a typical emission wavelength of 685nm and the continuous light output of 50mW. The diode is suitable for large

STPSC406B

Abstract: stpsc406d
Contextual Info: STPSC406 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC406D The SiC diode is an ultrahigh performance power

SLD301V-1

Abstract: SLD301V SLD301V-2 SLD301V-21 SLD301V-24 SLD301V-25 SLD301V-3
Contextual Info: SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current M-248 Po = 90mW

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K K A K TO-220AC STPSC4H065D K A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

laser diode lifetime

Abstract: C6802 IEC60825-1 SLD432S CHIP c6802
Contextual Info: SLD432S 40W Array Laser Diode Description The SLD432S is a high power laser diode with an array structure, which achieves 40W high power. M-S006 Features • High power Recommended optical power output: Po = 40W • Array structure • Open package Applications

laser diode lifetime

Abstract: C6802 IEC60825-1 SLD431S medical application of laser IR Laser diode
Contextual Info: SLD431S 20W Array Laser Diode Description The SLD431S is a high power laser diode with an array structure, which achieves 20W high power. M-S006 Features • High power Recommended optical power output: Po = 20W • Array structure • Open package Applications

High power laser diode

Abstract: laser diode array laser diode lifetime C6802 IEC60825-1 SLD432S
Contextual Info: SLD432S 40W Array Laser Diode Description The SLD432S is a high power laser diode with an array structure, which achieves 40W high power. M-S006 Features • High power Recommended optical power output: Po = 40W • Array structure • Open package Applications

SLD344YT

Abstract: SLD344YT-1 SLD344YT-2 SLD344YT-21 SLD344YT-24 SLD344YT-3
Contextual Info: SLD344YT 6W High Power Laser Diode Description The SLD344YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. Features • High-optical power output Recommended optical power output: PO = 6.0W

2 Wavelength Laser Diode

Abstract: Photo DIODE (any type) datasheet 10w laser diode 6 pin laser diode high power infrared laser diode laser diode lifetime note application laser diode SLD344YT SLD344YT-1 SLD344YT-2
Contextual Info: SLD344YT Preliminary 6W High Power Laser Diode Description The SLD344YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. Features • High-optical power output Recommended optical power output: PO = 6.0W

NJW4710

Abstract: NJW4710VE1
Contextual Info: NJW4710 4ch Laser Diode Driver for Blue Laser Diode •GENERAL DESCRIPTION NJW4710 is a laser diode driver for the operation of a grounded blue laser diode. It is suited to drive a blue laser diode, because it is operated by split power supply. It includes 4 channels current amplifiers

AlGaAs laser diode

Abstract: sld237vl sony CD Laser pickup C6802 IEC60825-1 optical pick-up
Contextual Info: SLD237VL Index-Guided High Power AlGaAs Laser Diode For the availability of this product, please contact the sales office. Description The SLD237VL is a high-power, index-guided AlGaAs laser diode. M-274 Features • High power • Low current consumption

2 Wavelength Laser Diode

Abstract: SLD326YT SLD326YT-1 SLD326YT-2 SLD326YT-21 SLD326YT-24 SLD326YT-3 2A510
Contextual Info: SLD326YT 4W High Power Laser Diode Description The SLD326YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. M-288 Features • High-optical power output Recommended optical power output: PO = 4.0W

SLD327YT

Abstract: SLD327YT-1 SLD327YT-2 SLD327YT-21 SLD327YT-24 SLD327YT-3 3w 9 pin laser
Contextual Info: SLD327YT 3W High Power Laser Diode Description The SLD327YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. M-288 Features • High-optical power output Recommended optical power output: PO = 3.0W

termistor 104

Abstract: 1000mW laser SLD304XT SLD304XT-1 SLD304XT-2 SLD304XT-21 SLD304XT-24 SLD304XT-25 SLD304XT-3
Contextual Info: SLD304XT 1000mW High Power Laser Diode Description The SLD304XT allows independent thermal and electric design. This laser diode has a built-in TE Thermo Electric cooler. M-273 Features • High power Recommended optical power output Po = 900mW • Low operating current