POWER DIODE HISTORY Search Results

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

STPSC806D

Abstract: JESD97
Contextual Info: STPSC806D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

STPSC806

Abstract: STPSC806D
Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

JESD97

Abstract: STPSC1006D
Contextual Info: STPSC1006D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

STPSC1006D

Contextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

STPSC406B

Abstract: stpsc406d
Contextual Info: STPSC406 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC406D The SiC diode is an ultrahigh performance power

STPSC606D

Abstract: STPSC606 STPSC606G-TR STPSC606G
Contextual Info: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet  production data Description A K K K A TO-220AC STPSC8H065D K A NC D²PAK STPSC8H065G-TR K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K K A K TO-220AC STPSC4H065D K A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

"Power Diode"

Abstract: nxp power diode
Contextual Info: BYV25FB-600 Enhanced ultrafast power diode Rev. 01 — 30 September 2010 Product data sheet 1. Product profile 1.1 General description Enhanced ultrafast power diode in a SOT404 D2PAK plastic 1.2 Features and benefits „ High thermal cycling performance

nxp power diode

Contextual Info: BYV25FX-600 Enhanced ultrafast power diode Rev. 01 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Enhanced ultrafast power diode in a SOD113 2-lead TO-220F plastic package. 1.2 Features and benefits „ High thermal cycling performance

nxp power diode

Contextual Info: BYV25F-600 Enhanced ultrafast power diode Rev. 1 — 1 October 2010 Product data sheet 1. Product profile 1.1 General description Enhanced ultrafast power diode in a SOD59 2-lead TO-220AC plastic package. 1.2 Features and benefits „ High thermal cycling performance

Contextual Info: Section V. Power and Thermal Management This section provides information on Power and Thermal Management for the Stratix III devices. • Revision History Altera Corporation Chapter 16, Programmable Power and Temperature Sensing Diode in Stratix III Devices

mini inductances

Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode with an N-Channel MOSFET 0.5µs Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V

Contextual Info: BUJD203A NPN power transistor with integrated diode Rev. 02 — 2 December 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 TO220AB plastic package.

PHD13005

Abstract: ballast Self-Oscillating
Contextual Info: PHD13005 NPN power transistor with integrated diode Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 plastic package.

BYC8-600

Abstract: hitag application note Nxp byc8
Contextual Info: BYC8-600 Hyperfast power diode Rev. 7 — 19 July 2010 Product data sheet 1. Product profile 1.1 General description Hyperfast power diode in a SOD59 2-lead TO-220AC plastic package. 1.2 Features and benefits „ Low reverse recovery current and low thermal resistance

"Power Diode"

Abstract: BYC15-600 hitag application note
Contextual Info: BYC15-600 Hyperfast power diode Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description Hyperfast power diode in a SOD59 2-lead TO-220AC plastic package 1.2 Features and benefits „ Extremely fast switching „ Low thermal resistance

L30 dual diode

Contextual Info: STPS20200C Power Schottky diode Datasheet  production data Features Diode 1 • Low forward voltage drop A1  Very small conduction losses K Diode 2  Negligible switching losses A2  Extremely fast switching  Low thermal resistance K  -40°C minimum operating Tj