POWER DIODE 200V 10A Search Results

10DL2C

Abstract: 10DL2C41A
Contextual Info: 10DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C41A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 200V Average Output Rectified Current : IO = 10A

Contextual Info: 10DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C41A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 200V l Average Output Rectified Current : IO = 10A

Contextual Info: SEMICONDUCTOR MBRD10U200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K D L : IO=10A. ・Repetitive Peak Reverse Voltage B : VRRM=200V.

Contextual Info: SEMICONDUCTOR MBRD10U200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K L D : IO=10A. ・Repetitive Peak Reverse Voltage B : VRRM=200V.

mbrf10u200

Abstract: SCHOTTKY 10A 200V
Contextual Info: SEMICONDUCTOR MBRF10U200 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES ・Average Output Rectified Current : IO= 10A. ・Repetitive Peak Reverse Voltage : VRRM= 200V. ・Fast Reverse Recovery Time : trr=35ns.

mbrf*10u200ct

Abstract: MBRF10u200ct MBRF10U200CTA
Contextual Info: SEMICONDUCTOR MBRF10U200CTA TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current DIM B E G : IO=10A. ・Repetitive Peak Reverse Voltage : VRRM=200V.

MBRF10200CT

Contextual Info: SEMICONDUCTOR MBRF10200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current B E G : IO=10A. Repetitive Peak Reverse Voltage : VRRM=200V. K

Contextual Info: ZOWIE Schottky Barrier Diode 200V / 10A Z3PK10200DH OUTLINE DIMENSIONS Case : Z3PAK FEATURES * * * * * * Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF

MBR10200CT

Contextual Info: SEMICONDUCTOR MBR10200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A O FEATURES C F Average Output Rectified Current E : IO=10A. G B Repetitive Peak Reverse Voltage Q : VRRM=200V. I

Z3PK10200DH

Contextual Info: ZOWIE Schottky Barrier Diode 200V / 10A Z3PK10200DH OUTLINE DIMENSIONS Case : Z3PAK FEATURES * * * * * * Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF

Z3PK10200H

Contextual Info: ZOWIE Schottky Barrier Diode 200V / 10A Z3PK10200H OUTLINE DIMENSIONS FEATURES Case : Z3PAK * * * * * * Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF

Contextual Info: SuperFETTM FFB10UP20S Ultrafast Recovery Power Rectifier Features Applications • Ultrafast with Soft Recovery : < 45ns • Output Rectifiers • High Reverse Voltage : VRRM = 200V • Switching Mode Power Supply • Avalanche Energy Rated • Free-wheeling diode for motor application

FULL WAVE RECTIFIER CIRCUITS

Abstract: design of rectifier circuit HALF WAVE RECTIFIER CIRCUITS Ultrafast RECTIFIER DIODES ON Semiconductor DATA ULTRAFAST SOFT RECOVERY RECTIFIER high power rectifier diode single List of rectifier diode power rectifiers rectifier cites test FFB10UP20S
Contextual Info: SuperFETTM FFB10UP20S Ultrafast Recovery Power Rectifier Features Applications • Ultrafast with Soft Recovery : < 45ns • Output Rectifiers • High Reverse Voltage : VRRM = 200V • Switching Mode Power Supply • Avalanche Energy Rated • Free-wheeling diode for motor application

MBRF10200CT

Abstract: mbrf10200
Contextual Info: SEMICONDUCTOR MBRF10200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=10A. Repetitive Peak Reverse Voltage : VRRM=200V. K Fast Reverse Recovery Time : trr=35ns.

Z3PK10200D

Contextual Info: Z3PK10200D 10Amp Low VF Schottky Barrier Diode 200V - Z3PAK OUTLINE DIMENSIONS Case : Z3PAK Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability

10DL2C

Abstract: 10DL2C41A
Contextual Info: TOSHIBA 10DL2C41A TO SHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C41A Unit in mm SW ITCHING TYPE POWER SUPPLY APPLICATIO N CONVERTER & CHOPPER APPLICATIO N 10.3M A X ., • Repetitive Peak Reverse Voltage : V rrm = 200V • Average Output Rectified Current : Iq = 10A

mbrf*10u200ct

Abstract: MBRF10u200ct MBRF10U200 011TJ
Contextual Info: SEMICONDUCTOR MBRF10U200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current G ・Repetitive Peak Reverse Voltage : VRRM=200V. K ・Fast Reverse Recovery Time : trr=35ns.

MBRF10U200CTA

Abstract: mbrf*10u200ct MBRF10u200ct
Contextual Info: SEMICONDUCTOR MBRF10U200CTA TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current G ・Repetitive Peak Reverse Voltage : VRRM=200V. K ・Fast Reverse Recovery Time : trr=35ns.

MBRF20U200CTA

Abstract: MBRF20U200 MBRF20U200CT mbrf*20u200ct
Contextual Info: SEMICONDUCTOR MBRF20U200CTA TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current G ・Repetitive Peak Reverse Voltage : VRRM=200V. K ・Fast Reverse Recovery Time : trr=35ns.

mbrf*20u200ct

Abstract: MBRF20U200 MBRF20U200CT
Contextual Info: SEMICONDUCTOR MBRF20U200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current G ・Repetitive Peak Reverse Voltage : VRRM=200V. K ・Fast Reverse Recovery Time : trr=35ns.

Contextual Info: FAST RECOVERY DIODE 30KF10E 30KF20E 30KF10B 30KF20B 33A/100~ 200V/trr : 50nsec 5.31.209 4.7Î.185) FEATURES i °Similar to TO-247AC Case r 15.91626) . 3.61.142) Ï4Ù 54) 0 Ultra - Fast Recovery » Low Forward Voltage Drop 3.41.134) 3.ÔI.118) o Low Power Loss, High

IN50B

Abstract: 12MF10
Contextual Info: FAST RECOVERY DIODE 12MF10 12MF20 i3A/50~200v/trr :50nsec FEATURES ° Hermetically Sealed Case • High Reliability Device 4.5 0 7 7 • Ultra - Fast Recovery • Low Forward Voltage Drop ° Low Power Loss, High Efficiency • High Surge Capability + »100 Volts thru 400 Volts Types Available

10DF1

Abstract: 10DF2 n439
Contextual Info: FAST RECOVERY DIODE 1.1A/100— 200V/trr : 200nsec 10DF1 10DF2 FEATURES ° Miniature Size 2.71.106 DIA 2.3 .091) -GO ° Super Fast Recovery » Low Forward Voltage Drop 0.9(.035) n r * 0.7Î.027) o Low Power Loss, High Efficiency 27(1.06) MIN ° High Surge Capability

Contextual Info: PD-94150B HFB25HJ20 Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount IF AV = 25A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power