POWER CONSUMPTION OF FCBGA Search Results

Contextual Info: Flow for Calculating Power Consumption Estimating total power consumption of chip Note 1 Changing package or circuit NG Is allowable power consumption of package satisfied? OK Changing frequency or circuit NG Is internal power consumption limit satisfied? Note 2

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06–20212–2E Semicustom CMOS Standard Cell CS302 Series • DESCRIPTION The CS302 series of 40 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption, higher speed and higher integration.

CS251

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS601-00003-0v01-E Semicustom CMOS Standard Cell CS251 Series • DESCRIPTION The CS251 series of 55 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption, higher speed and higher integration.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS601-00001-2v0-E Semicustom CMOS Standard Cell CS401 Series • DESCRIPTION The CS401 series of 28 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption, higher speed and higher integration.

1EEE1394

Abstract: rom multiplier CS81
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-1E Semicustom CMOS Standard cell array CS81 Series • DESCRIPTION The CS81 series of 0.18 Am CMOS standard cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.

CS81

Abstract: DS06-20206-1E 3813K 0.18-um CMOS standard cell library inverter
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-1E Semicustom CMOS Standard cell array CS81 Series • DESCRIPTION The CS81 series of 0.18 µm CMOS standard cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS601-00002-0v01-E Semicustom CMOS Standard Cell CS402 Series • DESCRIPTION The CS402 series of 28 nm standard cells is a line of CMOS ASICs of high-performance with minimum power consumption. By the adoption of core transistors with high current drivability operating at low voltages, the operating

F0706

Abstract: MoSys CS201 MoSys 1T sram "Single-Port RAM"
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20211-1E Semicustom CMOS Standard Cell CS201 Series • DESCRIPTION The CS201 series of 65 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption and higher integration. These cells offer the minimum level of leakage current in the semiconductor

f9906

Abstract: xl 1225 CE81 Fujitsu inverter 0.18-um CMOS standard cell library inverter
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 µm CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.

1EEE1394

Abstract: H 735 b1369 xl 1225 CE81
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 Am CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.

DS06-20206-1E

Abstract: xl 1225 transistor CS81 0.18-um CMOS standard cell library inverter
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-1E Semicustom CMOS Standard cell array CS81 Series • DESCRIPTION The CS81 series of 0.18 µm CMOS standard cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.

DS06-20112-1E

Abstract: CE77 register file 0.25-um standard cell library
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-1E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.

DS06-20112-1E

Abstract: CE77
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-1E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.

f9906

Abstract: CE81 0.18-um CMOS standard cell library inverter
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 µm CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.

CS91

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS06-20208-3Ea Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16

CS91 Series

Abstract: CS91 fujitsu inverter air F0609
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-3E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16

CS91

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-1E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16

CS81

Abstract: 0.18-um CMOS standard cell library inverter
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-5E Semicustom CMOS Standard cell CS81 Series • DESCRIPTION The CS81 series 0.18 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 40 million gates which have a gate delay time of 11 ps, resulting in both integration

CS81

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS06-20206-5Ea Semicustom CMOS Standard cell CS81 Series • DESCRIPTION The CS81 series 0.18 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 40 million gates which have a gate delay time of 11 ps, resulting in both integration

ARM1176JZF-S

Abstract: ARM1176JZF 90 nm CMOS CS101 ARM1176 fujitsu inverter air "Single-Port RAM"
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS06-20210-3Ea Semicustom CMOS Standard Cell CS101 Series • DESCRIPTION CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three

f0602

Abstract: CS101 "Single-Port RAM"
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20210-2E Semicustom CMOS Standard Cell CS101 Series • DESCRIPTION CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three

usb schema

Abstract: schema sata data to usb CB-55 fcbg nec cb core
Contextual Info: CB-55 55 nm Features >> 55 nm technology >> Up to 7 metal layers >> Very high gate count: 200 million gates raw >> 1.0 and 1.2 V core voltage optimized architecture >> Extremely low power consumption down to 0.29 nW/MHz/gate >> Extremely low leakage current using high-k transistors over silicon

cb-90 nec

Abstract: edram nec 90 nm CMOS NEC 426 nec cb core NEC Electronics America
Contextual Info: CB-90 90 nm >> 90 nm technology >> Up to 9 metal layers >> Very high speed >> Gate count up to 100 million gates >> 1.0 V core voltage >> Power consumption down to 0.51 nW/MHz/gate >> I/O voltage options: 1.8 V, 2.5 V, 3.3 V >> F lexible I/O structure supports USB,

VT1620A

Abstract: vt1723 vt6113 VT1724 VT1730 VIA VT1620A VT1708S VT1620 VT1610 vt6210l
Contextual Info: Vol. 2009 Issue 1 Compact Ultra small form factor and rich integration enabling rapid development of intelligent devices Efficient Fanless Flexible Advanced processor architecture and platform-centric design for higher performance-per-watt Industry-leading low power,