POWER 33 Search Results

VLM-33

Abstract: coaxial limiter
Contextual Info: COAXIAL LIMITER VLM-33+ Typical Performance Curves Power Output vs Frequency 20 16 18 12 16 8 Power Output dBm Power Output (dBm) Power Output vs Power Input 20 4 -4 @ 30 MHZ -8 -12 @ 1600 MHz -16 @ 3000 MHz 14 12 10 8 Power Input=+15 (dBm) Power Input=+20 (dBm)

rlm-33

Contextual Info: SURFACE MOUNT LIMITER RLM-33+ Typical Performance Curves Power Output vs Frequency 20 16 18 12 16 Power Output dBm Power Output (dBm) Power Output vs Power Input 20 8 4 -4 @ 30 MHZ -8 -12 @ 1600 MHz -16 @ 3000 MHz 14 12 10 8 6 Power Input=+12 (dBm) Power Input=+20 (dBm)

RM96

Abstract: relays
Contextual Info: 32 RM96 PCB power relays RM96 PCB power relays 33 34 RM96 PCB power relays

P0531961H

Abstract: low cost power amplifier P05319
Contextual Info: 03.06.04 P0531961H ♦ Features • • • • • • • 1.9 GHz band Power Amplifier Module 1.9 GHz frequency band Typical 33.5 dBm output power Low power consumption 11 W typ. Excellent adjacent leakage power Typical 33 dB power gain Cost-effective metal package

maxim 8725

Abstract: CAPACITOR 106 25K MAX5074AUP schematic diagram 48V telecom ups FOD2712 MAX5074 PS9715 LED DRIVER IC 1052 6 pin constant current
Contextual Info: 19-3312; Rev 0; 7/04 T AVAILABLE EVALUATION KI Power IC with Integrated MOSFETs for Isolated IEEE 802.3af PD and Telecom Power-Supply Applications The MAX5074 isolated PWM power IC features integrated switching power MOSFETs connected in a voltageclamped, two-transistor, power-circuit configuration. This

IEC62

Abstract: P1935 Premier Devices Germany
Contextual Info: Product Specification P1935 Power Amplifier 1880-1920 MHz, 35 dB min. Gain @ 1900 Hz @ 33.5 dBm Output FEATURES • • • • • 1.9 GHz Power Amplifier Module Typical 33.5 dBm output power Excellent adjacent leakage power Typical 35.7 dB power gain Low cost metal package

MC33730

Abstract: vkam mcz33730ek SG1002 SG187 "MC33730" automotive regulator voltage
Contextual Info: Analog, Mixed-Signal and Power Management MC33730 Switch mode power supply with multiple linear regulators Applications MC33730 Simplified Application Drawing • Automotive Power Train • Engine Control • Transmission Control 33730 • Electronic Power Steering

Contextual Info: ENG INE ERED COM PO NE NTS CO OIE D I 33332Ö3 □□□GbflM 7 j ~ 7 = Im profile CMOS COMPATIBLE MEMORY BACKUP POWER SYSTEMS MODULE # # # # # Converts low power CMOS static RAM to non­ volatile RAM Utilizes 5V Vcc power Full data protection during power-up power­

AWT6108

Abstract: AWT6108M10P8 GSM900
Contextual Info: AWT6108 GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control Data Sheet - Rev 2.1 FEATURES • InGaP HBT Technology • Integrated Power Control CMOS • Quad Band Applications • +35 dBm GSM Output Power at 3.5 V • +33 dBm DCS/PCS Output Power at 3.5 V

Contextual Info: AWT6155 Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control FEATURES E L AW T 615 GMSK MODE +34.8 dBm GSM850/900 Output Power +33 dBm DCS/PCS Output Power 55 % GSM 900 PAE 51 % DCS/PCS PAE Power control range > 50 dB O S EDGE MODE

Manufacturer Logos

Abstract: marking YB 600C
Contextual Info: ENG INE ERED COM PO NE NTS CO OIE D I 33332Ö3 □□□GbflM 7 j ~ 7 = Im profile CMOS COMPATIBLE MEMORY BACKUP POWER SYSTEMS MODULE # # # # # Converts low power CMOS static RAM to non­ volatile RAM Utilizes 5V Vcc power Full data protection during power-up power­

tanaka TS3332LD epoxy

Abstract: XP1073-BD P1073-BD ka-band bare
Contextual Info: 33-37 GHz GaAs MMIC Power Amplifier P1073-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 6.5 W Power Amplifier 22 dB Small Signal Gain 37 - 38 dBm Pulsed Saturated Output Power Up to 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

AWT6146

Abstract: GSM900
Contextual Info: AWT6146 GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control Data Sheet - Rev 2.0 FEATURES • InGaP HBT Technology • Integrated Power Control CMOS • Quad Band Applications • +35 dBm GSM Output Power at 3.5 V • +33 dBm DCS/PCS Output Power at 3.5 V

alto

Abstract: ZFMicro ZF Micro Solutions
Contextual Info: MICRO ZFx86 Power Measurements S O L U T I O N S ZFx86 Core Power Consumption 1800 1600 1400 Power mW 1200 1000 800 600 400 200 Peak Power Average Power w/ APM 33 MHz 627 250.6 Note: 2.2V Core Voltage @ 33MHz, 66MHz, and 100MHz 2.7V Core Voltage @ 128MHz

Contextual Info: APT8020JLL 800V 33A 0.200W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

LP3000

Abstract: MIL-HDBK-263 P100
Contextual Info: LP3000 2 W POWER PHEMT • • DRAIN BOND PAD 4X FEATURES ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compression at 3.3V ♦ 45% Power-Added Efficiency SOURCE BOND PAD (2x) GATE

APT8020JLL

Contextual Info: APT8020JLL 800V 33A 0.200W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

Contextual Info: HMC998LP5E v00.0612 Amplifiers - lineAr & power - smT GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Typical Applications Features The HmC998lp5e is ideal for: p1dB output power: +31 dBm • Test Instumentation psat output power: +33 dBm • Microwave Radio & VSAT

Contextual Info: HMC998LP5E v01.0813 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Features Amplifiers - Linear & Power - SMT Typical Applications The HMC998LP5E is ideal for: P1dB Output Power: +31 dBm • Test Instumentation Psat Output Power: +33 dBm • Microwave Radio & VSAT

XP1072-BD

Abstract: ka-band bare xp1072-bd-000v P1072-BD XP1072
Contextual Info: 33-37 GHz GaAs MMIC Power Amplifier P1072-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 4 W Power Amplifier 22 dB Small Signal Gain 35 - 36 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: HMC591LP5 / 591LP5E v02.0107 LINEAR & POWER AMPLIFIERS - SMT 11 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Typical Applications Features The HMC591LP5 / HMC591LP5E is ideal for use as a power ampliier for: Saturated Output Power: +33 dBm @ 20% PAE

HMC998LP5E

Abstract: EVAL01-HMC998LP5E 500 watt RF amplifier GHz
Contextual Info: HMC998LP5E v00.0612 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 0.1 - 20 GHz Typical Applications Features The HMC998LP5E is ideal for: P1dB Output Power: +31 dBm • Test Instumentation Psat Output Power: +33 dBm • Microwave Radio & VSAT

Contextual Info: E nbboçs* AWT910S6C TX POWER MMIC Your GaAs IC Source Advanced Product Information _ Rav 0 380-950 MHz Band GaAs Power Amplifier IC DESCRIPTION: The AWT910 Is a monolithic Power Amplifier FEATURES • High Output Power 33.0 dBm •

80 watts power amplifier

Abstract: H591 HMC591LP5 HMC591LP5E 109001 10 watt 16 ohm power amplifier
Contextual Info: HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz LINEAR & POWER AMPLIFIERS - SMT 6 Typical Applications Features The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifier for: Saturated Output Power: +33 dBm @ 20% PAE